ONSEMI BAV99LT1G

BAV99LT1
Preferred Device
Dual Series
Switching Diode
Features
• Pb−Free Packages are Available
http://onsemi.com
ANODE
1
MAXIMUM RATINGS (Each Diode)
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
Non−Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 s
IFSM
Rating
Peak Forward Surge Current
450
mA
3
CATHODE/ANODE
3
2
A
2.0
1.0
0.5
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Total Device Dissipation
FR−5 Board (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
CASE 318
SOT−23
STYLE 11
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Characteristic
CATHODE
2
A7 M
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
−65 to
+150
°C
A7 = Device Code
M = Date Code
ORDERING INFORMATION
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
Device
Package
Shipping†
BAV99LT1
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
10,000/Tape & Reel
SOT−23
(Pb−Free)
10,000/Tape & Reel
BAV99LT1G
BAV99LT3
BAV99LT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 3
1
Publication Order Number:
BAV99LT1/D
BAV99LT1
OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Max
Unit
V(BR)
70
−
Vdc
IR
−
−
−
2.5
30
50
Adc
(VR = 0, f = 1.0 MHz)
CD
−
1.5
pF
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
−
−
−
−
715
855
1000
1250
mVdc
(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 trr
−
6.0
ns
VFR
−
1.75
V
Reverse Breakdown Voltage,
(I(BR) = 100 A)
Reverse Voltage Leakage Current,
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance,
Forward Voltage,
Reverse Recovery Time,
Forward Recovery Voltage,
(IF = 10 mA, tr = 20 ns)
http://onsemi.com
2
BAV99LT1
CURVES APPLICABLE TO EACH DIODE
10
100
I R, REVERSE CURRENT (A)
µ
10
TA = 85°C
TA = 25°C
1.0
TA = −40°C
0.1
0.2
0.4
0.6
0.8
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
1.2
TA = 125°C
1.0
TA = 25°C
0
10
20
30
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 2. Leakage Current
0.68
CD , DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
http://onsemi.com
3
8
40
50
BAV99LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
PLASTIC PACKAGE
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
A
L
3
1
V
B S
2
G
DIM
A
B
C
D
G
H
J
K
L
S
V
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
4
For additional information, please contact your
local Sales Representative.
BAV99LT1/D