MMBD914LT1 Preferred Device High−Speed Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating VR 100 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 CATHODE 1 ANODE 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Symbol Max Unit PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C 2.4 mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 100 − Vdc − − 25 5.0 nAdc Adc OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 Adc) 5D M G G 1 5D = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Device MMBD914LT1 IR Diode Capacitance (VR = 0, f = 1.0 MHz) CT − 4.0 pF Forward Voltage (IF = 10 mAdc) VF − 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr − 4.0 ns 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. January, 2006 − Rev. 5 SOT−23 CASE 318 STYLE 8 ORDERING INFORMATION Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) © Semiconductor Components Industries, LLC, 2006 2 MARKING DIAGRAM Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range 1 MMBD914LT1G MMBD914LT3 MMBD914LT3G Package Shipping † SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel SOT−23 (Pb−Free) 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number: MMBD914LT1/D MMBD914LT1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% DUT 50 INPUT SAMPLING OSCILLOSCOPE 50 OUTPUT PULSE GENERATOR IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit TA = 85°C I R , REVERSE CURRENT ( A) 10 TA = −40°C 10 TA = 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8.0 40 50 MMBD914LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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