BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 1 • http://onsemi.com ESD Rating − Machine Model: Class B Pb−Free Package is Available ANODE 1 MAXIMUM RATINGS Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol Value Unit VR 250 Vdc VRRM 250 Vdc IF 225 mAdc IFM(surge) 625 mAdc Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Symbol Max Unit PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C JT M SOT−23 CASE 318 STYLE 11 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 JT = Device Code M = Date Code ORDERING INFORMATION Device BAS21SLT1 RJA May, 2004 − Rev. 4 MARKING DIAGRAM 3 2 Thermal Resistance, Junction to Ambient Semiconductor Components Industries, LLC, 2004 3 CATHODE/ANODE 1 THERMAL CHARACTERISTICS Characteristic CATHODE 2 BAS21SLT1G Package Shipping† SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BAS21SLT1/D BAS21SLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit − − 0.1 100 250 − − − 1000 1250 OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Adc IR Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) trr − 50 ns 820 +10 V 2.0 k 100 H tr 0.1 F IF tp IF t trr 10% t 0.1 F 90% D.U.T. 50 INPUT SAMPLING OSCILLOSCOPE 50 OUTPUT PULSE GENERATOR VR iR(REC) = 3.0 mA IR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 1200 25°C REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) TA = −55°C 1000 800 155°C 600 400 200 1 1 10 100 1000 7000 6000 5000 TA = 155°C 4000 3000 6 5 4 3 TA = 25°C 2 1 0 TA = −55°C 1 FORWARD CURRENT (mA) 2 5 10 20 50 REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 2 100 200 300 BAS21SLT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 BAS21SLT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. BAS21SLT1/D