ONSEMI NUF8410MN

NUF8410MN
Low Capacitance 8 Line EMI
Filter with ESD Protection
This device is an 8 line EMI filter array for wireless applications.
Greater than −20 dB attenuation is obtained at frequencies from
800 MHz to 3.0 GHz. It also offers ESD protection−clamping transients
from static discharges. ESD protection is provided across all capacitors.
Features
1
• EMI Filtering and ESD Protection
• Integration of 40 Discrete Components
• Compliance with IEC61000−4−2 (Level 4)
•
•
•
•
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16
Cd
Cd
2
15
Cd
> 8 kV (Contact)
DFN Package, 1.6 x 4.0 mm
Moisture Sensitivity Level 1
ESD Ratings: Machine Model = C
Human Body Model = 3B
This is a Pb−Free Device*
Cd
14
3
Cd
Cd
4
13
Cd
Cd
5
12
Benefits
• Reduces EMI/RFI Emmisions on a Data Line
• Integrated Solution Offers Cost and Space Savings
• Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass
•
Filter Response
Integrated Solution Improves System Reliability
6
11
Cd
Cd
Cd
Cd
10
8
9
EMI Filtering and ESD Protection for Data Lines
Wireless Phones
Handheld Products
Notebook Computers
LCD Displays
1
Cd
7
Applications
•
•
•
•
•
Cd
2
3
4
5
6
7
Cd
Cd
(Top View)
MARKING
DIAGRAM
16
8
1
DFN
CASE 506AC
840
AYW
G
1
GND
16
15
14
13 12
11
(Bottom View)
10
840
A
Y
W
G
9
ORDERING INFORMATION
Figure 1. Pin Connections
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 0
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
1
Device
Package
Shipping†
NUF8410MNT4G
DFN16
(Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NUF8410MN/D
NUF8410MN
MAXIMUM RATINGS
Parameter
Symbol
ESD Discharge IEC61000−4−2
Value
VPP
Unit
kV
Contact Discharge
8.0
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
TL
260
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Maximum Reverse Working Voltage
Breakdown Voltage
Symbol
Test Conditions
Min
Typ
VRWM
VBR
IR = 1.0 mA
Leakage Current
IR
VRWM = 3.3 V
Resistance
RA
IR = 20 mA
Capacitance (Notes 1 and 2)
Cd
Cut−Off Frequency (Note 3)
f3dB
Above this frequency,
appreciable attenuation occurs
1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.
2. Total Line Capacitance is 2 times the Diode Capacitance (Cd).
3. 50 source and 50 load termination.
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2
Max
Unit
5.0
V
8.0
V
6.0
7.0
100
nA
85
100
115
−
8.5
11
pF
250
MHz
NUF8410MN
TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified)
0
−5
−10
S21 (dB)
−15
−20
−25
−30
−35
−40
−45
1.0E+6
1.0E+7
1.0E+8
1.0E+9
1.0E+10
FREQUENCY (Hz)
1.6
110
1.4
108
106
1.2
RESISTANCE ()
NORMALIZED CAPACITANCE
Figure 2. Insertion Loss Characteristic
1.0
0.8
0.6
0.4
102
100
98
96
94
0.2
0
104
92
0
1.0
2.0
3.0
4.0
90
−40
5.0
−20
0
20
40
60
80
REVERSE VOLTAGE (V)
TEMPERATURE (°C)
Figure 3. Typical Capacitance
Figure 4. Typical Resistance over Temperature
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3
NUF8410MN
PACKAGE DIMENSIONS
DFN16
CASE 506AC−01
ISSUE B
A
D
B
PIN ONE
REFERENCE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION b APPLIES TO TERMINAL AND
IS MEASURED BETWEEN 0.25 AND 0.30 MM
FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
E
2X
0.15 C
TOP VIEW
2X
(A3)
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
0.15 C
(A3)
0.10 C
A
16X
0.08 C
SEATING
PLANE
SIDE VIEW
A1
C
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.18
0.30
4.00 BSC
3.10
3.30
1.60 BSC
0.30
0.50
0.50 BSC
0.20
−−−
0.20
0.40
D2
16X
L
1
e
2X
0.25 x 0.40 mm
TEST PAD SIZE
8
SOLDERING FOOTPRINT*
4.10
E2
16X
K
16
9
16X b
NOTE 3
14X
0.50 PITCH
0.10 C A B
0.05 C
BOTTOM VIEW
0.50
1.91
16X
0.28
16X 0.51
SCALE 16:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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Email: [email protected]
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Order Literature: http://www.onsemi.com/litorder
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Phone: 81−3−5773−3850
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4
For additional information, please contact your
local Sales Representative.
NUF8410MN/D