INFINEON SGW25N120

SGW25N120
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-247-3-1
(TO-247AC)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGW25N120
VCE
IC
Eoff
Tj
1200V
25A
2.9mJ
150°C
Package
Ordering Code
TO-247AC
Q67040-S4277
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
IC
A
TC = 25°C
46
TC = 100°C
25
Pulsed collector current, tp limited by Tjmax
ICpul s
84
Turn off safe operating area
-
84
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
EAS
130
mJ
tSC
10
µs
Ptot
313
W
-55...+150
°C
VCE ≤ 1200V, Tj ≤ 150°C
IC = 25A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
1)
Short circuit withstand time
VGE = 15V, 100V ≤VCC ≤1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Tj , Tstg
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
1)
260
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Jul-02
SGW25N120
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
0.4
K/W
Characteristic
RthJC
IGBT thermal resistance,
junction – case
RthJA
Thermal resistance,
TO-247AC
40
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
1200
-
-
2.5
3.1
3.6
T j =1 5 0° C
-
3.7
4.3
3
4
5
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V ,
I C = 15 0 0 µA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V , I C = 25 A
T j =2 5 °C
Gate-emitter threshold voltage
VGE(th)
I C = 10 0 0 µA ,
VCE=VGE
Zero gate voltage collector current
ICES
V C E =1200V,V G E =0V
µA
T j =2 5 °C
-
-
350
T j =1 5 0° C
-
-
1400
-
-
100
nA
20
-
S
pF
Gate-emitter leakage current
IGES
V C E =0V,V G E =20V
Transconductance
gfs
V C E = 20 V , I C = 25 A
Input capacitance
Ciss
V C E = 25 V ,
-
2150
2600
Output capacitance
Coss
V G E = 0V ,
-
160
190
Reverse transfer capacitance
Crss
f= 1 MH z
-
110
130
Gate charge
QGate
V C C = 96 0 V, I C =2 5 A
-
225
300
nC
Dynamic Characteristic
V G E = 15 V
Internal emitter inductance
LE
T O - 24 7A C
-
13
-
nH
IC(SC)
V G E = 15 V ,t S C ≤ 10 µs
10 0 V≤ V C C ≤ 12 0 0 V,
T j ≤ 15 0° C
-
240
-
A
measured 5mm (0.197 in.) from case
1)
Short circuit collector current
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Jul-02
SGW25N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
45
60
-
40
52
-
730
950
-
30
39
-
2.2
2.9
-
1.5
2.0
-
3.7
4.9
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 °C ,
V C C = 80 0 V, I C = 2 5 A,
V G E = 15 V /0 V ,
R G = 22 Ω,
1)
L σ =1 8 0n H,
1)
C σ = 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
T j =1 5 0° C
V C C = 80 0 V,
I C = 25 A ,
V G E = 15 V /0 V ,
-
50
60
-
36
43
-
820
990
R G = 22 Ω,
1)
L σ =1 8 0n H,
1)
C σ = 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
42
50
-
3.8
4.6
-
2.9
3.8
-
6.7
8.4
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
ns
mJ
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Power Semiconductors
3
Jul-02
SGW25N120
Ic
100A
tp=1µs
100A
80A
60A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
15µs
TC=80°C
40A
TC=110°C
20A
0A
10Hz
Ic
100Hz
50µs
10A
200µs
1ms
1A
DC
0.1A
1kHz
10kHz
1V
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 22Ω)
1000V
60A
300W
50A
250W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
100V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
350W
200W
150W
100W
40A
30A
20A
10A
50W
0W
25°C
10V
50°C
75°C
100°C
0A
25°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
Power Semiconductors
50°C
75°C
100°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Jul-02
SGW25N120
80A
80A
70A
70A
60A
V G E =17V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
60A
15V
50A
13V
40A
11V
9V
30A
7V
20A
10A
0A
0V
1V
2V
3V
4V
5V
6V
60A
IC, COLLECTOR CURRENT
40A
11V
9V
30A
7V
20A
50A
Tj=+150°C
Tj=+25°C
Tj=-40°C
20A
10A
4V
5V
6V
7V
8V
9V
10V 11V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
Power Semiconductors
1V
2V
3V
4V
5V
6V
7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
70A
0A
3V
13V
0A
0V
7V
80A
30A
15V
50A
10A
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
40A
V G E =17V
6V
5V
IC=50A
4V
IC=25A
3V
IC=12.5A
2V
1V
0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Jul-02
SGW25N120
1000ns
1000ns
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
tf
100ns
td(on)
td(on)
tf
tr
tr
10ns
0Ω
10ns
0A
100ns
20A
40A
60A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 2 2 Ω,
dynamic test circuit in Fig.E )
10Ω
20Ω
30Ω
40Ω
50Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 25A,
dynamic test circuit in Fig.E )
1000ns
t, SWITCHING TIMES
td(off)
100ns
td(on)
tr
tf
10ns
-50°C
0°C
50°C
100°C
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
6V
max.
4V
typ.
3V
min.
2V
1V
0V
-50°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 25A, RG = 2 2 Ω,
dynamic test circuit in Fig.E )
Power Semiconductors
5V
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
6
Jul-02
SGW25N120
25mJ
10mJ
20mJ
15mJ
Eon*
10mJ
Eoff
5mJ
0mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery.
8mJ
6mJ
Eon*
4mJ
20A
40A
60A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 2 2 Ω,
dynamic test circuit in Fig.E )
Eoff
2mJ
0mJ
0A
Ets*
0Ω
10Ω
20Ω
30Ω
40Ω
50Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 25A,
dynamic test circuit in Fig.E )
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery.
Ets*
6mJ
Eon*
4mJ
Eoff
2mJ
0mJ
-50°C
ZthJC, TRANSIENT THERMAL IMPEDANCE
8mJ
D=0.5
-1
10 K/W 0.2
0.1
0.05
R,(K/W)
0.07417
0.20899
0.08065
0.03681
-2
10 K/W 0.02
0.01
R1
50°C
100°C
10 K/W
1µs
150°C
10µs
100µs
1ms
10ms 100ms
1s
tp, PULSE WIDTH
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 25A, RG = 2 2 Ω,
dynamic test circuit in Fig.E )
Power Semiconductors
R2
single pulseC 1 = τ 1 / R 1 C 2 = τ 2 /R 2
-3
0°C
τ, (s)
0.4990
0.08994
0.00330
0.00038
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
7
Jul-02
SGW25N120
20V
10V
C, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
Ciss
15V
UCE=960V
1nF
5V
Coss
0V
0nC
100nC
200nC
300nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 25A)
20V
30V
500A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
tsc, SHORT CIRCUIT WITHSTAND TIME
10V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
30µs
25µs
20µs
15µs
10µs
5µs
0µs
10V
Crss
100pF
0V
11V
12V
13V
14V
300A
200A
100A
0A
10V
15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 1200V, start at Tj = 25°C)
Power Semiconductors
400A
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C)
8
Jul-02
SGW25N120
dimensions
TO-247AC
symbol
[mm]
max
min
max
A
4.78
5.28
0.1882
0.2079
B
2.29
2.51
0.0902
0.0988
C
1.78
2.29
0.0701
0.0902
D
1.09
1.32
0.0429
0.0520
E
1.73
2.06
0.0681
0.0811
F
2.67
3.18
0.1051
0.1252
G
0.76 max
20.80
21.16
0.8189
0.8331
K
15.65
16.15
0.6161
0.6358
L
5.21
5.72
0.2051
0.2252
M
19.81
20.68
0.7799
0.8142
N
3.560
4.930
0.1402
0.1941
Q
9
0.0299 max
H
∅P
Power Semiconductors
[inch]
min
3.61
6.12
0.1421
6.22
0.2409
0.2449
Jul-02
SGW25N120
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH,
and stray capacity Cσ =40pF.
10
Jul-02
SGW25N120
Published by
Infineon Technologies AG i Gr.,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
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Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
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human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
11
Jul-02