SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3 • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE IC VCE(sat) Tj Marking Package SGP10N60A 600V 10A 2.3V 150°C G10N60A PG-TO-220-3-1 SGW10N60A 600V 10A 2.3V 150°C G10N60A PG-TO-247-3 Parameter Symbol Value Collector-emitter voltage VCE DC collector current IC Type Maximum Ratings 600 Unit V A TC = 25°C 20 TC = 100°C 10.6 Pulsed collector current, tp limited by Tjmax ICpuls 40 Turn off safe operating area - 40 Gate-emitter voltage VGE ±20 V Avalanche energy, single pulse EAS 70 mJ tSC 10 µs Ptot 92 W -55...+150 °C VCE ≤ 600V, Tj ≤ 150°C IC = 10 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg Soldering temperature, Ts 260 wavesoldering, 1.6mm (0.063 in.) from case for 10s 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.5 Nov 09 SGP10N60A SGW10N60A Thermal Resistance Parameter Symbol Conditions Max. Value Unit 1.35 K/W Characteristic IGBT thermal resistance, RthJC junction – case Thermal resistance, RthJA junction – ambient PG-TO-220-3-1 62 PG-TO-247-3-21 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - 1.7 2 2.4 T j = 15 0° C - 2.3 2.8 3 4 5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 50 0µA Collector-emitter saturation voltage VCE(sat) V V G E = 15V, I C = 10A T j = 25° C Gate-emitter threshold voltage VGE(th) I C = 30 0µA, V C E =V G E Zero gate voltage collector current ICES V C E = 600V ,V G E = 0V µA T j = 25° C - - 40 - 1500 T j = 15 0° C - Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA Transconductance gfs V C E = 20V, I C = 10A - 6.7 - S Ciss V C E = 25V, - 550 660 pF Output capacitance Coss V G E = 0V, - 62 75 Reverse transfer capacitance Crss f= 1 M Hz - 42 51 Gate charge QGate V C C = 4 80V, I C = 10A - 52 68 nC Internal emitter inductance LE PG -TO -220-3-1 - 7 - nH PG -TO -247-3-21 - 13 - V G E = 1 5V,t S C ≤10µs V C C ≤ 600V, T j ≤ 150° C - 100 - Dynamic Characteristic Input capacitance V G E = 1 5V measured 5mm (0.197 in.) from case Short circuit collector current 2) 2) IC(SC) A Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.5 Nov 09 SGP10N60A SGW10N60A Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 28 34 - 12 15 - 178 214 - 24 29 - 0.15 0.173 - 0.17 0.221 - 0.320 0.394 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25° C, V C C = 4 00V, I C = 10A, V G E = 0/ 1 5V , R G = 2 5Ω , L σ 1 ) = 18 0n H , C σ 1 ) = 55pF Energy losses include “tail” and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. - 28 34 - 12 15 - 198 238 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) T j = 15 0° C V C C = 4 00V, I C = 10A, V G E = 0/ 1 5V , R G = 2 5Ω L σ 1 ) = 18 0n H , 1) C σ = 55pF Energy losses include “tail” and diode reverse recovery. - 26 32 - 0.260 0.299 - 0.280 0.364 - 0.540 0.663 ns mJ Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2.5 Nov 09 SGP10N60A SGW10N60A 50A t p = 5 µs Ic 40A 10A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT T C =80°c 30A 20A 10A T C =110°c Ic 15 µs 50 µs 200 µs 1A 1m s DC 0,1A 0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 25Ω) 1000V 25A 10 0W IC, COLLECTOR CURRENT 20A 8 0W 6 0W 4 0W Ptot, POWER DISSIPATION 100V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 12 0W 2 0W 0W 25 °C 10V 50°C 75 °C 1 00°C 15A 10A 5A 0A 2 5 °C 125 °C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) 5 0 °C 7 5 °C 1 0 0 °C 1 2 5 °C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.5 Nov 09 35A 35A 30A 30A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT SGP10N60A SGW10N60A 25A V GE=20V 20A 15V 13V 15A 11V 9V 10A 7V 5V 1V 2V 20A 15A 15V 13V 11V 9V 10A 7V 5V 3V 4V 0A 0V 5V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) 35A 3,5V T j=+25°C +150°C 25A 20A 15A 10A 5A 0A 0V 2V 4V 6V 8V 10V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) 30A IC, COLLECTOR CURRENT V GE= 20 V 5A 5A 0A 0V 25A VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V) I C = 20A 3,0V 2,5V I C = 10 A 2,0V 1,5V 0°C I C =5A 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.5 Nov 09 SGP10N60A SGW10N60A t, SWITCHING TIMES t, SWITCHING TIMES t d(off) 100ns tf td(on) tr 10ns 0A 5A 10A 15A 20A 100ns t d (o ff) tf t d (o n ) 10ns 0Ω 25A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 25Ω, Dynamic test circuit in Figure E) tr 20 Ω 40 Ω 60 Ω 80 Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(o ff) 100ns t d(o n) tf 10ns 0°C tr 50°C 100°C 150°C VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5 ,5 V 5 ,0 V 4 ,5 V 4 ,0 V 3 ,5 V m ax. 3 ,0 V 2 ,5 V ty p . 2 ,0 V 1 ,5 V m in . 1 ,0 V -5 0 ° C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 25Ω, Dynamic test circuit in Figure E) 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Rev. 2.5 Nov 09 SGP10N60A SGW10N60A 1,6m J E ts * 1,2m J 1,0m J 0,8m J E on * 0,6m J E off 0,4m J 0,2m J 0,0m J 0A 5A 10A 15A 20A E, SWITCHING ENERGY LOSSES 1,4m J E, SWITCHING ENERGY LOSSES 1,0m J *) Eon and Ets include losses due to diode recovery. 0,4m J E on * 20 Ω 40 Ω 60 Ω 80 Ω 0 0,4mJ E ts* E off E on* 0,0mJ 0°C E off 10 K/W 0,6mJ 0,2mJ 0,6m J RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL IMPEDANCE E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. E ts * 0,8m J 0,2m J 0Ω 25A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 25Ω, Dynamic test circuit in Figure E) 0,8mJ *) Eon and Ets include losses due to diode recovery. D=0.5 0.2 0.1 -1 10 K/W R,(K/W) 0.4287 0.4830 0.4383 0.05 0.02 -2 10 K/W 0.01 τ, (s) 0.0358 -3 4.3*10 -4 3.46*10 R1 single pulse R2 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 -3 50°C 100°C 10 K/W 1µs 150°C 10µs 100µs 1m s 10m s 100m s 1s tp, PULSE WIDTH Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 25Ω, Dynamic test circuit in Figure E) Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Rev. 2.5 Nov 09 SGP10N60A SGW10N60A 1nF 25V C iss 15V C, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 20V 120V 480V 10V C oss C rss 5V 0V 0nC 25nC 50nC 10pF 0V 75nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 10A) 20V 30V IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 200A 20µ s 15µ s 10µ s 5µ s 0µ s 10V 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 25µ s tsc, SHORT CIRCUIT WITHSTAND TIME 100pF 11V 12V 13V 14V 15V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25°C) 150A 100A 50A 0A 10V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE ≤ 600V, Tj = 150°C) 8 Rev. 2.5 Nov 09 SGP10N60A SGW10N60A PG-TO220-3-1 9 Rev. 2.5 Nov 09 SGP10N60A SGW10N60A 10 Rev. 2.5 Nov 09 SGP10N60A SGW10N60A τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn TC Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity C σ =55pF. 11 Rev. 2.5 Nov 09 SGP10N60A SGW10N60A Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 Rev. 2.5 Nov 09