SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES N-Channel 20V/4.0A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=75mΩ@VGS=1.8V 20V/1.0A,RDS(ON)=120mΩ@VGS=1.25V P-Channel -20V/-3.4A,RDS(ON)= 85mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=110mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=130mΩ@VGS=-1.8V -20V/-1.0A,RDS(ON)=200mΩ@VGS=-1.25V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP– 6P package design PIN CONFIGURATION( TSOP– 6P ) PART MARKING 2006/03/20 Ver.3 Page 1 SPC6604 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G1 Gate 1 2 S2 Source 2 3 G2 4 D2 Gate 2 Drain 2 5 S1 6 D1 Source 1 Drain1 ORDERING INFORMATION Part Number Package Part SPC6604ST6RG TSOP- 6P Marking 04YW ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPC6604ST6RG : Tape Reel ; Pb – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Typical Parameter Symbol Unit N-Channel P-Channel Drain-Source Voltage VDSS 20 -20 V Gate –Source Voltage VGSS ±12 ±12 V 4.0 3.4 -3.4 -2.8 -2.4 -2.1 IDM 10 IS 1.6 -8 -1.4 Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient 2006/03/20 Ver.3 1.15 PD T ≤ 10sec Steady State RθJA ℃ ℃ -55/150 -55/150 50 90 A A W 0.75 TJ TSTG A 52 90 ℃/W Page 2 SPC6604 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol V(BR)DSS VGS(th) Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance RDS(on) Forward Transconductance gfs Diode Forward Voltage VSD Conditions VGS=0V,ID= 250uA VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=VGS,ID=-250uA VDS=0V,VGS=±12V VDS=0V,VGS=±12V VDS= 20V,VGS=0V VDS=-20V,VGS=0V VDS= 20V,VGS=0V TJ=55℃ VDS=-20V,VGS=0V TJ=55℃ VDS≥ 4.5V,VGS = 10V VDS≤ -4.5V,VGS =-10V VGS=4.5V,ID=4.0A VGS=-4.5V,ID=-3.4A VGS=2.5V,ID=3.4A VGS=-2.5V,ID=-2.4A VGS=1.8V,ID=2.8A VGS=-1.8V,ID=-1.7A VGS=1.25V,ID=1.0A VGS=-1.25V,ID=-1.0A VDS=5V,ID=-3.6A VDS=-5V,ID=-2.8A IS=1.6A,VGS=0V IS=-1.5A,VGS=0V Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Typ 20 -20 0.4 -0.35 Max. Unit 1.0 -0.8 ±100 ±100 1 -1 10 -10 6 -6 V nA uA A 0.040 0.068 0.046 0.090 0.056 0.113 0.105 0.185 10 6 0.8 -0.8 0.050 0.085 0.060 0.110 0.075 0.130 0.120 0.200 4.8 4.8 1.0 1.0 1.0 1.0 8 10 12 13 30 18 12 15 8 8 Ω S 1.2 -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd td(on) Turn-On Time tr td(off) Turn-Off Time tf 2006/03/20 Ver.3 N-Channel VDS=6V,VGS=4.5V, ID≡2.8A P-Channel VDS=-6V,VGS=-4.5V ,ID≡-2.8A N-Channel VDD=6V,RL=6Ω ,ID≡1.0A VGEN=4.5V ,RG=6Ω P-Channel VDD=-6V,RL=6Ω ,ID≡-1.0A VGEN=-4.5V ,RG=6Ω N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch nC 14 16 18 23 35 25 16 20 nS Page 3 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( N-Channel ) 2006/03/20 Ver.3 Page 4 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( N-Channel ) 2006/03/20 Ver.3 Page 5 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( N-Channel ) 2006/03/20 Ver.3 Page 6 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2006/03/20 Ver.3 Page 7 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2006/03/20 Ver.3 Page 8 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2006/03/20 Ver.3 Page 9 SPC6604 N & P Pair Enhancement Mode MOSFET TSOP- 6P PACKAGE OUTLINE 2006/03/20 Ver.3 Page 10 SPC6604 N & P Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. 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