SPN3458 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3458 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES 60V/5.0A,RDS(ON)= 115Ω@VGS=10V 60V/4.5A,RDS(ON)= 125Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design PIN CONFIGURATION( TSOP– 6P ) PART MARKING 2008/12/31 Ver.1 Page 1 SPN3458 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 D Drain 2 D Drain 3 G Gate 4 5 S D Source Drain 6 D Drain ORDERING INFORMATION Part Number Package SPN3458ST6RGB TSOP-6P Part Marking 58YW ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN3458ST6RG : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature TA=25℃ TA=70℃ ID 5.0 4.0 A IDM 10 A IS 2.0 A PD 2.0 1.3 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 90 ℃/W 2008/12/31 Ver.1 Page 2 SPN3458 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Forward Transconductance gfs VDS=0V,VGS=±20V VDS=60V,VGS=0.0V VDS=60V,VGS=0.0V TJ=55℃ VDS≧4.5V,VGS=4.5V VGS = 10V,ID=5.0A VGS =4.5V,ID=4.5A VDS=15V,ID=4.0A Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Diode Forward Voltage VSD IS=2.5A,VGS=0V Drain-Source On-Resistance RDS(on) 60 0.5 1.5 ±100 1 10 10 V nA uA A 0.106 0.118 12 0.115 0.125 0.8 1.2 4.0 6 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2008/12/31 Ver.1 VDS=30V, VGS=4.5V ID≡4.0A 1.0 VDS=30V, VGS=0V f=1MHz td(off) tf 320 pF 42 20 td(on) tr nC 1.2 VDD=30V ,RL=12Ω ID≡2.5A,VGEN=10V RG=6Ω 6 10 12 20 18 30 10 15 Page 3 ns SPN3458 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/12/31 Ver.1 Page 4 SPN3458 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/12/31 Ver.1 Page 5 SPN3458 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/12/31 Ver.1 Page 6 SPN3458 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/12/31 Ver.1 Page 7 SPN3458 N-Channel Enhancement Mode MOSFET TSOP- 6P PACKAGE OUTLINE 2008/12/31 Ver.1 Page 8 SPN3458 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2008/12/31 Ver.1 Page 9