SSM5N03FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM5N03FE High-Speed Switching Applications Analog-Switch Applications • • • • Unit: mm Input impedance is high; driving current is extremely low. Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. High-speed switching Housed in an ultra-small package suitable for high density mounting Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage VGSS 10 V ID 100 mA 150 mW Drain current Drain power dissipation PD (Note 1) Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: JEDEC ― Using continuously under heavy loads (e.g. the application of JEITA ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2P1B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 0.003 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 5) 0.45 mm 0.3 mm Marking Equivalent Circuit (top view) 5 4 DA 1 2 3 5 4 Q1 Q2 1 1 2 3 2007-11-01 SSM5N03FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 V ⎯ ⎯ 1 μA V (BR) DSS ID = 100 μA, VGS = 0 V 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.7 ⎯ 1.3 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 10 mA 25 60 ⎯ mS Drain–source ON-resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ⎯ 4 12 Ω Gate leakage current Drain–source breakdown voltage Drain cutoff current Input capacitance Ciss VDS = 3 V, VGS = 0 V, f = 1 MHz ⎯ 11.0 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0 V, f = 1 MHz ⎯ 3.3 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0 V, f = 1 MHz ⎯ 9.3 ⎯ pF ton VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V ⎯ 0.16 ⎯ toff VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V ⎯ Turn-on time Switching time Turn-off time μs ⎯ 0.19 Switching Time Test Circuit (a) Test circuit VDD = 3 V Output D.U. < 1% = Input: tr, tf < 5 ns (Zout = 50 Ω) RL Common Source Ta = 25°C ID 2.5 V 0 10 μs VIN 50 Ω Input VDD 2.5 V (b) VIN VGS 0 90% 10% VDD 10% (c) VOUT VDS 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. 2 2007-11-01 SSM5N03FE (Q1, Q2 Common) ID – VDS 100 ID – VDS (low-voltage region) 100 2.5 2.0 4.0 Common Source 2.5 2.0 2.2 Ta = 25°C 80 1.9 Drain current ID (mA) Drain current ID (mA) 80 60 1.8 40 1.7 1.6 20 Common Source Ta = 25°C 60 1.8 40 1.6 20 VGS = 1.4 V 0 0 2 4 6 Drain–source voltage 8 VGS = 1.4 V 0 0 10 0.2 0.4 Drain–source voltage VDS (V) IDR – VDS 1.0 VDS (V) ID – VGS Common Source VDS = 3 V 100 D 10 0.8 1000 Common Source VGS = 0 Ta = 25°C G Drain current ID (mA) Drain reverse current IDR (mA) 100 0.6 IDR 1 S 0.1 10 Ta = 100°C 1 25°C −25°C 0.1 0.01 0 −0.2 −0.4 −0.6 Drain–source voltage −0.8 −1.0 0.01 0 −1.2 VDS (V) 0.5 1 1.5 2 Gate–source voltage 2.5 3 VGS (V) ⎪Yfs⎪ – ID 300 C – VDS Common Source 100 Common Source Ta = 25°C VGS = 0 50 (pF) 100 50 Capacitance C Forward transfer admittance ⏐Yfs⏐ (mS) VDS = 3 V 30 f = 1 MHz 30 Ta = 25°C Ciss 10 Coss 5 3 10 5 1 Crss 3 5 10 30 50 1 0.1 100 Drain current ID (mA) 0.3 1 3 Drain–source voltage 3 10 30 VDS (V) 2007-11-01 SSM5N03FE (Q1, Q2 Common) RDS (ON) – ID t – ID 10 10000 Common Source VDD = 3 V VGS = 0 to 2.5 V Ta = 25°C Common Source 5000 8 Switching time t (ns) Drain–source ON-resistance RDS (ON) (Ω) Ta = 25°C 6 4 2.5 2 VGS = 4 V 3000 toff 1000 500 tf 300 ton 100 tr 50 0 0 20 40 60 80 30 0.1 100 0.3 Drain current ID (mA) 1 3 RDS (ON) – Ta 100 PD* – Ta 250 (mW) Common Source ID = 10 mA 8 Drain power dissipation PD* Drain–source ON-resistance RDS (ON) (Ω) 30 Drain current ID (mA) 10 6 2.5 4 VGS = 4 V 2 0 −25 10 0 25 50 75 100 125 Mounted on an FR4 board Ambient temperature Ta (°C) 2 Cu Pad: 0.135 mm × 5) 150 100 50 0 0 150 (25.4 mm × 25.4 mm × 1.6 t 200 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM5N03FE RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01