TOSHIBA SSM6P05FU

SSM6P05FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P05FU
Power Management Switch
High Speed Switching Applications
Unit: mm
•
Small package
•
Low on resistance : Ron = 3.3 Ω (max) (@VGS = −4 V)
•
Low gate threshold voltage
: Ron = 4.0 Ω (max) (@VGS = −2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−20
V
Gate-Source voltage
VGSS
±12
V
DC
ID
−200
Pulse
IDP
−400
PD (Note 1)
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
Drain power dissipation (Ta = 25°C)
Note:
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Using continuously under heavy loads (e.g. the application of
Weight: 6.8 mg (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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SSM6P05FU
Marking
Equivalent Circuit (top view)
6
5
4
6
2
4
Q1
DH
1
5
Q2
3
1
2
3
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Gate leakage current
IGSS
Drain-Source breakdown voltage
Drain cut-off current
V (BR) DSS
IDSS
Test Condition
Min
Typ.
Max
Unit
⎯
⎯
±1
μA
−20
⎯
⎯
V
⎯
⎯
−1
μA
−0.6
⎯
−1.1
V
100
⎯
⎯
mS
ID = −100 mA, VGS = −4 V (Note2)
⎯
2.1
3.3
ID = −50 mA, VGS = −2.5 V (Note2)
⎯
3.2
4.0
⎯
27
⎯
pF
⎯
7
⎯
pF
⎯
21
⎯
pF
VGS = ±12 V, VDS = 0
ID = −1 mA, VGS = 0
VDS = −20 V, VGS = 0
Vth
VDS = −3 V, ID = −0.1 mA
Forward transfer admittance
⎪Yfs⎪
VDS = −3 V, ID = −50 mA
Drain-Source ON resistance
RDS (ON)
Gate threshold voltage
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
(Note2)
VDS = −3 V, VGS = 0, f = 1 MHz
Turn-on time
ton
VDD = −3 V, ID = −50 mA,
⎯
70
⎯
Turn-off time
toff
VGS = 0~−2.5 V
⎯
70
⎯
Ω
ns
Note2: Pulse test
Switching Time Test Circuit (Q1, Q2 common)
(a) Test circuit
(b) VIN
0V
OUT
0
50 Ω
IN
−2.5 V
10 μs
90%
−2.5 V
RL
VDD
10%
(c) VOUT
VDD = −3 V
Duty <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDS (ON)
VDD
90%
10%
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
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(Q1, Q2 common)
ID – VDS
ID – VGS
−500
Common
Source
Ta = 25°C
−10
−4
−3
Common Source
VDS = −3 V
−100
(mA)
(mA)
−400
−2.5
−2.3
−300
Drain current ID
Drain current ID
−1000
−2.1
−200
−1.9
−1.7
−100
−10
Ta = 100°C
−1
25°C
−25°C
−0.1
VGS = −1.5 V
0
0
−0.5
−1.0
−1.5
Drain-Source voltage
−0.01
0
−2.0
−0.5
VDS (V)
−1.0
−2.0
Gate-Source voltage
RDS (ON) – ID
6
−1.5
RDS (ON) – VGS
Common Source
Common Source
Ta = 25°C
ID = −50 mA
5
Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source on resistance
RDS (ON) (Ω)
5
−2.5 V
3
VGS = −4 V
2
1
0
0
−100
−200
−3.0
VGS (V)
6
4
−2.5
−300
−400
4
3
Ta = 100°C
2
25°C
1
−25°C
0
0
−500
−2
Drain current ID (mA)
−4
−6
Gate-Source voltage
−8
−10
VGS (V)
RDS (ON) – Ta
6
⎪Yfs⎪ – ID
Common Source
1000
4
Forward transfer admittance
⎪Yfs⎪ (mS)
Drain-Source on resistance
RDS (ON) (Ω)
5
−2.5 V, −50 mA
3
2
VGS = −4 V, ID = −100 mA
1
0
−25
0
25
50
75
100
125
Common Source
VDS = −3 V
500 Ta = 25°C
300
100
50
30
−10
150
Ambient temperature Ta (°C)
−30
−50
−100
−300 −500
−1000
Drain current ID (mA)
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SSM6P05FU
(Q1, Q2 common)
IDR – VDS
C – VDS
−500
100
VGS = 0
50
Ta = 25°C
(pF)
−400
D
−300
G
Capacitance C
Drain reverse current IDR (mA)
Common Source
IDR
S
−200
30
Ciss
Coss
10
5
3
Crss
Common Source
VGS = 0
f = 1 MHz
−100
Ta = 25°C
1
−0.1
0
0
0.2
0.4
0.6
0.8
Drain-Source voltage
1.0
1.2
−0.3
−1
Drain-Source voltage
1.4
t – ID
Mounted on FR4 board.
VDD = −3 V
(25.4 mm × 25.4 mm × 1.6 t
2
Cu Pad: 0.32 mm × 6)
(mW)
Common Source
VGS = 0~−2.5 V
Ta = 25°C
tf
50
ton
Drain power dissipation PD*
Switching time t (ns)
(V)
PD* – Ta
toff
100
10
−1
VDS
−30
400
500
30
−10
VDS (V)
1000
300
−3
tr
−3
−10
−30
−100
300
200
100
−300
0
0
Drain current ID (mA)
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
*: Total rating
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SSM6P05FU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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