HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices High Speed Switching Applications Interface Applications • • • Unit: mm High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact package. Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V ID 100 PD(Note 1) Channel temperature Storage temperature range DC drain current Drain power dissipation JEDEC ― mA JEITA ― 200 mW TOSHIBA Tch 150 °C Tstg −55 to 150 °C 2-2J1C Weight: 6.8 mg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: TOTAL rating 1 2007-11-01 HN1K05FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Gate leakage current Drain-source breakdown voltage Drain cut-off current Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 V ⎯ ⎯ 1 μA V (BR) DSS ID = 100 μA, VGS = 0 V 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Vth VDS = 1.5 V, ID = 0.1 mA 0.5 ⎯ 1 V ⎪Yfs⎪ VDS = 1.5 V, ID = 10 mA 35 70 ⎯ mS Drain-Source ON resistance 1 RDS (ON) 1 ID = 1 mA, VGS = 1.2 V ⎯ 15 50 Ω Drain-Source ON resistance 2 RDS (ON) 2 ID = 10 mA, VGS = 1.5 V ⎯ 10 40 Ω Drain-Source ON resistance 3 RDS (ON) 3 ID = 10 mA, VGS = 2.5 V ⎯ 7 28 Ω Gate threshold voltage Forward transfer admittance Input capacitance Ciss VDS = 1.5 V, VGS = 0 V, f = 1 MHz ⎯ 12 ⎯ pF Reverse transfer capacitance Crss VDS = 1.5 V, VGS = 0 V, f = 1 MHz ⎯ 3.4 ⎯ pF Output capacitance Coss VDS = 1.5 V, VGS = 0 V, f = 1 MHz ⎯ 12 ⎯ pF ton VDD = 1.5 V, ID = 10 mA, VGS = 0 to 1.5 V ⎯ 0.35 ⎯ toff VDD = 1.5 V, ID = 10 mA, VGS = 0 to 1.5 V ⎯ 0.2 ⎯ Switching time Equivalent Circuit (top view) 6 5 Marking 4 6 Q1 2 5 4 KK Q2 1 μs 1 3 2 3 (Q1, Q2 common) Switching Time Test Circuit (a) Test circuit (b) VIN ID 1.5 V 0 10 μs VIN OUT RL 50 Ω IN VGS VDD VDD = 1.5 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C 1.5 V 0 90% 10% VDD 10% (c) VOUT VDS 90% VDS (ON) ton 2 tf tr toff 2007-11-01 HN1K05FU (Q1, Q2 common) ID – VDS (low voltage region) ID – VDS 100 100 2.0 V source 80 (mA) (mA) Common source Ta = 25°C Common 1.8 V 80 2.5 V ID Drain current ID Drain current 60 1.4 V 40 1.2 V 20 VGS = 1 V 4 8 12 Drain-source voltage 16 VDS 60 1.2 V 20 0 0 20 1.2 VDS 2.0 (V) Common source Ta = 25°C Ta = 100°C −25°C 25°C 1 0.1 0.5 1 1.5 Gate-source voltage 2 VGS 1.2 V 1.5 V 10 VGS = 2.5 V 1 0.1 2.5 (V) 1 100 10 Drain current ID (mA) ⎪Yfs⎪ – ID RDS (ON) – Ta 50 1000 Common source Common source VDS = 1.5 V 40 30 VGS = 1.5 V, ID = 10 mA 20 VGS = 1.2 V, ID = 1 mA 10 Forward transfer admittance ⎪Yfs⎪ (mS) Drain-source on resistance RDS (ON) (Ω) 1.6 RDS (ON) – ID 100 Drain-source on resistance RDS (ON) (Ω) (mA) ID Drain current 0.8 Drain-source voltage Common source 0.01 0 0.4 (V) VDS = 1.5 V 10 1.4 V 40 VGS = 1 V ID – VGS 100 1.6 V 2.2 V 1.6 V 0 0 1.8 V 2.0 V Ta = 25°C 100 10 VGS = 2.5 V, ID = 10 mA 0 −50 0 50 Ambient temperature 100 Ta 1 1 150 (°C) 10 Drain current 3 100 ID 1000 (mA) 2007-11-01 HN1K05FU (Q1, Q2 common) C – VDS t – ID 100 Common source Common source VGS = 0 VDD = 1.5 V f = 1 MHz VGS = 0 to 1.5 V (ns) (pF) 10000 Ta = 25°C 1000 toff Switching time Capacitance C t Ta = 25°C Ciss 10 Coss ton 100 tf tr Crss 0 0.1 1 10 Drain-source voltage 10 0.1 100 VDS (V) 1 Drain current 10 ID 100 (mA) PD* – Ta Drain power dissipation PD* (mW) 300 200 100 0 0 40 80 Ambient temperature 120 Ta 160 (°C) *: TOTAL rating 4 2007-11-01 HN1K05FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01