SBL3030PT - SBL3060PT 30A SCHOTTKY BARRIER RECTIFIER SPICE MODELS: SBL3030PT SBL3035PT SBL3040PT SBL3045PT SBL3050PT SBL3060PT Features · · Schottky Barrier Chip TO-3P Guard Ring Die Construction for Transient Protection Dim Min Max · · · · Low Power Loss, High Efficiency A 1.88 2.08 · Lead Free Finish, RoHS Compliant (Note 3) A B High Surge Capability H High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application J S C Mechanical Data R · · Case: TO-3P P · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · Polarity: As Marked on Body Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K L Q G D N Terminals: Finish - Bright Tin. Solderable per MIL-STD-202, Method 208 E M Ordering Information: See Last Page M Marking: Type Number B 4.87 5.13 C 21.25 21.75 D 19.60 20.10 2.40 E 2.10 G 0.51 0.76 H 15.75 16.25 J 1.93 2.18 K 2.90Æ 3.20Æ L 3.78 4.38 M 5.20 5.70 N 1.12 1.22 2.16 P 1.90 Q 2.93 3.22 R 11.70 12.80 4.40 Typical S Weight: 5.6 grams (approximate) All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 95°C (Note 1) Symbol SBL 3030PT SBL 3035PT SBL 3040PT SBL 3045PT SBL 3050PT SBL 3060PT Unit VRRM VRWM VR 30 35 40 45 50 60 V VR(RMS) 21 24.5 28 31.5 35 42 V IO 30 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 275 A Forward Voltage Drop @ IF = 15A, TC = 25°C VFM @ TC = 25°C @ TC = 100°C IRM 1.0 75 Peak Reverse Current at Rated DC Blocking Voltage 0.55 0.70 V mA Typical Total Capacitance (Note 2) CT 1100 pF Typical Thermal Resistance Junction to Case (Note 1) RqJc 2.0 °C/W Tj, TSTG -65 to +150 °C Operating and Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23018 Rev. 10 - 2 1 of 3 www.diodes.com SBL3030PT - SBL3060PT ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) 24 18 12 6 0 100 50 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Derating Curve IFSM, PEAK FORWARD SURGE CURRENT (A) 0 100 SBL3030PT - SBL30450PT 10 SBL3050PT - SBL3060PT 1.0 0.1 150 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics per Element 4000 300 8.3 ms single half-sine-wave JEDEC method 250 200 150 100 CT, JUNCTION CAPACITANCE (pF) I(AV), AVERAGE RECTIFIED CURRENT (A) 30 Tj = 25°C f = 1MHz 1000 50 100 0 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Forward Surge Current IR, INSTANTANEOUS REVERSE CURRENT (A) 1 0.1 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance per Element 100 100 TC = 100°C 10 TC = 75°C 1.0 TC = 25°C 0.1 0.01 120 40 80 PERCENT OF PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics per Element 0 DS23018 Rev. 10 - 2 2 of 3 www.diodes.com SBL3030PT - SBL3060PT Ordering Information Notes: (Note 4) Device Packaging Shipping SBL3030PT TO-3P 30/Tube SBL3035PT TO-3P 30/Tube SBL3040PT TO-3P 30/Tube SBL3045PT TO-3P 30/Tube SBL3050PT TO-3P 30/Tube SBL3060PT TO-3P 30/Tube 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf DS23018 Rev. 10 - 2 3 of 3 www.diodes.com SBL3030PT - SBL3060PT