MBR2535CT - MBR2560CT 30A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection TO-220AB Low Power Loss, High Efficiency L High Surge Capability B Min Max A 14.48 15.75 B 10.00 10.40 C 2.54 3.43 D 5.90 6.40 E 2.80 3.93 G 12.70 14.27 H 2.40 2.70 J 0.69 0.93 K 3.54 3.78 M High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications C D K A Lead Free Finish, RoHS Compliant (Note 4) Mechanical Data 1 2 3 E · · Case: TO-220AB · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Dim G Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 J Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208 N H H P Pin 1 Pin 2 Pin 3 Polarity: As Marked on Body Case Marking: Type Number L 4.07 4.82 M 1.15 1.39 N 0.30 0.50 P 2.04 2.79 All Dimensions in mm Weight: 2.24 grams (approx.) Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol MBR2535CT MBR2545CT MBR2550CT MBR2560CT Unit VRRM VRWM VR 35 45 50 60 V VR(RMS) 25 32 35 42 V IO 30 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Peak Repetitive Reverse Surge Current (Note 3) Average Rectified Output Current Forward Voltage Drop @ TC = 130°C IRRM 1.0 0.5 A @ IF = 15.0A, TC = 25°C @ IF = 15.0A, TC = 125°C @ IF = 30.0A, TC = 25°C @ IF = 30.0A, TC = 125°C VFM ¾ ¾ 0.82 0.73 0.75 0.65 ¾ ¾ V @ TC = 25°C @ TC = 125°C IRM 0.2 40 1.0 50 mA CT 750 Peak Reverse Current at Rated DC Blocking Voltage Typical Total Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes: 500 pF RqJC 1.5 °C/W Tj, TSTG -65 to +150 °C 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. 3. 2.0ms pulse width, f = 1.0KHz. 4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS31036 Rev. 6 - 2 1 of 2 www.diodes.com MBR2535CT - MBR2560CT ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE RECTIFIED CURRENT (A) 30 24 18 12 6 0 0 50 100 50 10 Tj = 150° C Tj = 25° C 1.0 0.1 MBR2535CT & MBR2545CT MBR2550CT & MBR2560CT 0.01 0.2 150 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 10000 150 Tj = 25° C f = 1.0MHz 8.3 ms single half-sine-wave JEDEC method CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TC, CASE TEMPERATURE (° C) Fig. 1 Forward Derating Curve 0.4 100 50 1000 100 0.1 0 1 10 100 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance (per element) NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current Ordering Information MBR2535CT & MBR2545CT MBR2550CT & MBR2560CT (Note 5) Device Packaging Shipping MBR25xxCT* TO-220AB 50/Tube * xx = Device type, e.g. MBR2545CT Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf. DS31036 Rev. 6 - 2 2 of 2 www.diodes.com MBR2535CT - MBR2560CT