MBR6030PT - MBR6045PT 60A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip TO-3P Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability A B High Current Capability and Low Forward Voltage Drop H For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Lead Free Finish, RoHS Compliant (Note 3) J S C Mechanical Data R · · Case: TO-3P Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 P · · Moisture Sensitivity: Level 1 per J-STD-020C N · · · · Polarity: As Marked on Body K Q L G D Terminals: Finish - Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208 E M M Dim Min Max A 1.88 2.08 B 4.68 5.36 C 20.63 22.38 D 18.5 21.5 E 2.1 2.4 G 0.51 0.76 H 15.38 16.25 J 1.90 2.70 K 2.9Æ 3.65Æ L 3.78 4.50 M 5.2 5.7 N 0.89 1.53 P 1.82 2.46 Q 2.92 3.23 Marking: Type Number R 11.70 12.84 Weight: 5.6 grams (approximate) S ¾ 6.10 Ordering Information: See Last Page All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 125°C (Note 1) Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop MBR 6030PT MBR 6035PT MBR 6040PT MBR 6045PT Unit VRRM VRWM VR 30 35 40 45 V VR(RMS) 21 25 28 32 V IO 60 A IFSM 500 A @ IF = 30A, TC = 25°C @ IF = 30A, TC = 125°C @ IF = 60A, TC = 25°C VFM 0.62 0.55 0.75 V @ TC = 25°C @ TC = 100°C IRM 1.0 50 mA Peak Reverse Current at Rated DC Blocking Voltage Typical Total Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes: Symbol CT 650 pF RqJC 1.0 °C/W Tj, TSTG -55 to +150 °C 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS30053 Rev. 4 - 2 1 of 3 www.diodes.com MBR6030PT - MBR6045PT ã Diodes Incorporated 100 IF, INSTANTANEOUS FWD CURRENT (A) IO, AVERAGE FORWARD CURRENT (A) 80 70 60 50 40 30 20 10 10 1.0 0.1 0 0 50 100 0 150 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 600 10000 8.3ms single half-sine-wave JEDEC method Tj = 25° C 500 CT, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TC, CASE TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve 0.2 400 300 200 1000 100 100 0.1 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance per Element 100 Tj = 100° C 10 1.0 Tj = 25° C 0.1 0.01 0 10 20 30 40 50 60 PEAK REVERSE VOLTAGE (V) Fig. 5 Typical Reverse Characteristics DS30053 Rev. 4 - 2 2 of 3 www.diodes.com MBR6030PT - MBR6045PT Ordering Information Notes: (Note 4) Device Packaging Shipping MBR6030PT TO-3P 30/Tube MBR6035PT TO-3P 30/Tube MBR6040PT TO-3P 30/Tube MBR6045PT TO-3P 30/Tube 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf DS30053 Rev. 4 - 2 3 of 3 www.diodes.com MBR6030PT - MBR6045PT