SPICE MODELS: SBL830 SBL835 SBL840 SBL845 SBL850 SBL860 SBL830 - SBL860 8.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring for Transient Protection TO-220AC Low Power Loss, High Efficiency L High Current Capability, Low VF B High Surge Capability For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications M C D K Lead Free Finish, RoHS Compliant (Note 3) A Mechanical Data Pin 1 · · Case: TO-220AC · · · Moisture Sensitivity: Level 1 per J-STD-020C · · Pin 2 E Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 G J N Polarity: See Diagram R Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208 P + Pin 1 + Pin 2 - Marking: Type Number Case Weight: 2.3 grams (approx.) Dim Min Max A 14.48 15.75 B 10.00 10.40 C 2.54 3.43 D 5.90 6.40 E 2.80 3.93 G 12.70 14.27 J 0.69 0.93 K 3.54 3.78 L 4.07 4.82 M 1.15 1.39 N 0.30 0.50 P 2.04 2.79 R 4.83 5.33 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 95°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage @ IF = 8A, TC = 25°C Peak Reverse Current at Rated DC Blocking Voltage @ TC = 25°C @ TC = 100°C Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes: Symbol SBL 830 SBL 835 SBL 840 SBL 845 SBL 850 SBL 860 Unit VRRM VRWM VR 30 35 40 45 50 60 V VR(RMS) 21 24.5 28 31.5 35 42 V IO 8 A IFSM 200 A VFM 0.55 0.70 V IRM 0.5 50 mA Cj 700 pF RqJC 6.9 °C/W Tj, TSTG -65 to +150 °C 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23044 Rev. 4 - 2 1 of 3 www.diodes.com SBL830-SBL860 ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 10 8 6 4 2 0 0 50 100 150 100 SBL830 - SBL845 10 SBL850 - SBL860 1.0 0.1 0.2 TC, CASE TEMPERATURE (° C) Fig. 1 Fwd Current Derating Curve 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 300 4000 Tj = 25° C 8.3 ms single half-sine-wave JEDEC method 250 Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.4 200 150 100 1000 50 100 0.1 0 1 10 100 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 1.0 100 Tj = 100°C 10 Tj = 75°C 1.0 Tj = 25°C 0.1 0.01 0 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS23044 Rev. 4 - 2 2 of 3 www.diodes.com SBL830-SBL860 Ordering Information (Note 4) Device Packaging Shipping SBL8xx* TO-220AC 50/Tube * xx = Device type, e.g. SBL845 Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf. DS23044 Rev. 4 - 2 3 of 3 www.diodes.com SBL830-SBL860