DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed • Low forward voltage BAT93 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT • Two-pin SMD package. VR continuous reverse voltage 30 V IF continuous forward current 200 mA DESCRIPTION Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection.Iintended for high speed switching, circuit protection and voltage clamping applications. The diode is encapsulated in a SOD123 SMD plastic package. VF forward voltage IF = 10 mA 400 mV VR = 25 V 2 µA 150 °C 10 pF IR reverse current Tj junction temperature Cd diode capacitance k VR = 1 V a MAM058 Top view Fig.1 Simplified outline (SOD123) and symbol. December 1993 2 Philips Semiconductors Product specification Schottky barrier diode BAT93 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp < 10 ms − 600 mA Ptot total power dissipation Tamb ≤ 25°C − 250 mW Tstg storage temperature −65 +150 °C Tamb operating ambient temperature −65 +150 °C Tj junction temperature − 150 °C THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER THERMAL RESISTANCE from junction to ambient; note 1 500 K/W Note 1. Printed-circuit board mounting (SOD123 standard conditions). CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER CONDITIONS forward voltage MIN. MAX. UNIT IF = 0.1 mA − 240 mV IF = 1 mA − 320 mV IF = 10 mA − 400 mV IF = 30 mA − 500 mV IF = 100 mA − 800 mV V(BR)R reverse breakdown voltage IR = 10 µA 30 − V IR reverse current VR = 25 V; note 1 − 2 µA Cd diode capacitance VR = 1 V; f = 1 MHz − 10 pF trr reverse recovery time when switched from IF = 10 mA − to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA 5 ns Note 1. Pulsed test: tp = 300 µs; δ = 0.02. December 1993 3 Philips Semiconductors Product specification Schottky barrier diode BAT93 MSA892 IF (mA) MSA893 10 3 3 10halfpage dbook, IR (µA) (1) (2) (3) (1) 10 2 10 2 (2) 10 10 (1) 1 10 1 (2) (3) 1 (3) 10 1 0 0.4 0.8 VF (V) 0 1.2 10 20 VR (V) (1)Tamb = 125 °C. (1)Tamb = 125 °C. (2)Tamb = 85 °C. (2)Tamb = 85 °C. (3)Tamb = 25 °C. (3)Tamb = 25 °C. Fig.2 Forward current as a function of forward voltage. Fig.3 Reverse current as a function of reverse voltage. MSA891 15 MSA894 300 Cd (pF) 30 P tot (mW) 10 200 5 100 0 0 10 20 V R (V) 0 30 Fig.4 Diode capacitance as a function of reverse voltage. December 1993 0 75 Tamb ( oC) Fig.5 Power derating curve. 4 150 Philips Semiconductors Product specification Schottky barrier diode BAT93 PACKAGE OUTLINE o 17 max (2x) handbook, full pagewidth 12 o max (2x) 0.55 0.40 1.35 max 0.19 0.12 0.1 max 0.25 min ,,, ,,, ,,, ,,, ,,, 5o max (2x) 12 o max (2x) cathode colour band 1.7 1.4 0.70 0.50 A 2.85 2.55 3.85 3.55 0.2 M Dimensions in mm. Fig.6 SOD123. December 1993 5 A MBA038 - 2 Philips Semiconductors Product specification Schottky barrier diode BAT93 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1993 6 Philips Semiconductors Product specification Schottky barrier diode BAT93 NOTES December 1993 7 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1991 - 14.B, (1428) Buenos Aires, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40 783 749, Fax. (31)40 788 399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-000-SÃO PAULO-SP, Brazil. P.O. Box 7383 (01064-970). Tel. (011)829-1166, Fax. (011)829-1849 Canada: INTEGRATED CIRCUITS: Tel. (800)234-7381, Fax. (708)296-8556 DISCRETE SEMICONDUCTORS: 601 Milner Ave, SCARBOROUGH, ONTARIO, M1B 1M8, Tel. (0416)292 5161 ext. 2336, Fax. (0416)292 4477 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. 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