PHILIPS BAT720

DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
BAT720
Schottky barrier diode
Product specification
Supersedes data of 1998 Jan 21
1999 May 26
Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
FEATURES
DESCRIPTION
• Ultra high switching speed
Planar Schottky barrier diode with an integrated guard ring for stress protection
in a small SOT23 plastic SMD package.
• Low forward voltage
• Guard ring protected
• Small plastic SMD package.
APPLICATIONS
handbook, halfpage
3
3
• Ultra high-speed switching
2
n.c.
1
• Voltage clamping
• Protection circuits.
1
2
Top view
MAM394
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Marking code: L6p = made in Hong Kong; L6t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
40
V
IF
continuous forward current
−
500
mA
IFSM
non-repetitive peak forward current
−
2
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C
1999 May 26
tp < 10 ms
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 500 mA; see Fig.2
−
550
mV
IR
reverse current
VR = 35 V; see Fig.3
−
100
µA
VR = 35 V; Tj = 100 °C; see Fig.3
−
10
mA
f = 1 MHz; VR = 0; see Fig.4
60
90
pF
Cd
diode capacitance
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Refer to SOT23 standard mounting conditions.
1999 May 26
3
VALUE
UNIT
500
K/W
Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
GRAPHICAL DATA
MBK578
103
handbook, halfpage
MBK579
10
handbook, halfpage
IF
(mA)
IR
(mA)
102
(1)
1
(1)
(2)
(2)
10−1
10
(3)
10−2
1
10−1
150
250
350
450
VF (mV)
10−3
550
(3)
0
10
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(3) Tamb = 25 °C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
MBK577
102
handbook, halfpage
Cd
(pF)
10
1
0
10
20
30
VR (V)
40
f = 1 MHz; Tj = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
1999 May 26
4
20
30 V (V) 40
R
Reverse current as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 May 26
EUROPEAN
PROJECTION
5
Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 26
6
Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
NOTES
1999 May 26
7
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© Philips Electronics N.V. 1999
SCA 65
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Printed in The Netherlands
115002/02/pp8
Date of release: 1999 May 26
Document order number:
9397 750 05933