DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 BAT720 Schottky barrier diode Product specification Supersedes data of 1998 Jan 21 1999 May 26 Philips Semiconductors Product specification Schottky barrier diode BAT720 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection in a small SOT23 plastic SMD package. • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS handbook, halfpage 3 3 • Ultra high-speed switching 2 n.c. 1 • Voltage clamping • Protection circuits. 1 2 Top view MAM394 PINNING PIN DESCRIPTION 1 anode 2 not connected 3 cathode Marking code: L6p = made in Hong Kong; L6t = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 40 V IF continuous forward current − 500 mA IFSM non-repetitive peak forward current − 2 A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C 1999 May 26 tp < 10 ms 2 Philips Semiconductors Product specification Schottky barrier diode BAT720 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 500 mA; see Fig.2 − 550 mV IR reverse current VR = 35 V; see Fig.3 − 100 µA VR = 35 V; Tj = 100 °C; see Fig.3 − 10 mA f = 1 MHz; VR = 0; see Fig.4 60 90 pF Cd diode capacitance THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOT23 standard mounting conditions. 1999 May 26 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification Schottky barrier diode BAT720 GRAPHICAL DATA MBK578 103 handbook, halfpage MBK579 10 handbook, halfpage IF (mA) IR (mA) 102 (1) 1 (1) (2) (2) 10−1 10 (3) 10−2 1 10−1 150 250 350 450 VF (mV) 10−3 550 (3) 0 10 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 MBK577 102 handbook, halfpage Cd (pF) 10 1 0 10 20 30 VR (V) 40 f = 1 MHz; Tj = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1999 May 26 4 20 30 V (V) 40 R Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier diode BAT720 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 May 26 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification Schottky barrier diode BAT720 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 26 6 Philips Semiconductors Product specification Schottky barrier diode BAT720 NOTES 1999 May 26 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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