DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage MBD128 1PS88SB48 Schottky barrier diodes Product specification Supersedes data of 1998 Aug 05 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diodes 1PS88SB48 PINNING FEATURES • Ultra fast switching speed PIN DESCRIPTION • Low forward voltage 1 anode (a1) • Small SMD package 2 anode (a2) • Guard ring protected 3 common cathode (k1) • Absorbs very high surge pulse 4 anode (a3) • Low capacitance. 5 anode (a4) 6 common cathode (k2) APPLICATIONS • High speed switching 6 • Circuit protection 5 4 handbook, halfpage • Voltage clamping. 6 5 4 1 2 3 DESCRIPTION The 1PS88SB48 consists of two dual high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SMD SC-88 plastic package. 1 2 Top view 3 MGL160 MSA370 Marking code: 8t5. Fig.1 Simplified outline (SC-88) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode − VR continuous reverse voltage IF continuous forward current − 120 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 120 mA IFSM non-repetitive peak forward current tp < 10 ms − 200 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C 1999 Apr 26 2 40 V Philips Semiconductors Product specification Schottky barrier diodes 1PS88SB48 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF continuous forward voltage see Fig.2 IF = 1 mA 380 mV IF = 10 mA 500 mV IF = 40 mA IR Cd continuous reverse current diode capacitance 1 V VR = 30 V; note 1; see Fig.3 1 µA VR = 40 V; note 1; see Fig.3 10 µA VR = 0; f = 1 MHz; see Fig.5 5 pF Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SC-88 standard mounting conditions. 1999 Apr 26 3 VALUE UNIT 416 K/W Philips Semiconductors Product specification Schottky barrier diodes 1PS88SB48 GRAPHICAL DATA MLC361 - 1 2 10halfpage handbook, MLC362 103 handbook, halfpage IR (µA) IF (mA) (1) 102 10 10 (1) (2) (3) (2) (4) 1 1 10 1 10−1 (3) 10 2 10−2 0 0.2 0.4 0.6 0.8 0 1.0 10 20 30 V F (V) Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. MLC363 MLC364 10 3 handbook, halfpage 40 (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (1) Tamb = 150 °C. (2) Tamb = 85 °C. VR (V) 5 Cd (pF) handbook, halfpage r diff (Ω) 4 102 3 2 10 1 1 10 1 0 1 10 IF (mA) 0 102 Differential forward resistance as a function of forward current; typical values. 1999 Apr 26 20 30 VR (V) 40 f = 1 MHz; Tamb = 25 °C. f = 10 KHz. Fig.4 10 Fig.5 4 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier diodes 1PS88SB48 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 1999 Apr 26 REFERENCES IEC JEDEC EIAJ SC-88 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification Schottky barrier diodes 1PS88SB48 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 26 6 Philips Semiconductors Product specification Schottky barrier diodes 1PS88SB48 NOTES 1999 Apr 26 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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