MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 16W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 14 dB (TYP.) @ f=3.4 - 3.6GHz High power added efficiency P.A.E. = 37 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Min.) @Po=32dBm S.C.L. 15.8 8.0+/-0.2 (2) 2MIN 17.4+/-0.3 R1.2 (3) item 01 : 3.4 - 3.6 GHz band power amplifier 13.4 4.0+/-0.4 0.1 item 51 : 3.4 - 3.6 GHz band digital radio communication QUALITY GRADE 1.4 IG (1): GATE (2): SOURCE (FLANGE) (3): DRAIN RECOMMENDED BIAS CONDITIONS GF-18 VDS = 10 (V) ID = 4.5 (A) RG=25 (ohm) ABSOLUTE MAXIMUM RATINGS 2.4+/-0.2 20.4+/-0.2 APPLICATION (Ta=25deg.C) < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into Symbol Parameter Ratings Unit VGDO Gate to drain voltage -15 V but there is always the possibility that trouble may occur VGSO Gate to source voltage -15 V with them. Trouble with semiconductors may lead to personal Drain current 15 A injury, fire or property damage. Remember to give due IGR Reverse gate current -40 mA consideration to safety when making your circuit designs, IGF Forward gate current 84 mA with appropriate measures such as (1)placement of PT Total power dissipation 78.9 W Tch Channel temperature 175 deg.C Tstg Storage temperature -65 / +175 deg.C ID *1 making semiconductor products better and more reliable, substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) Parameter Test conditions A VDS = 3V , VGS = 0V VDS = 3V , ID = 4.4A - 4 - S Gate to source cut-off voltage VDS = 3V , ID = 80mA - - -4.5 V 41.5 42.5 - dBm 12 14 - dB Drain current - 4.5 - A Power added efficiency - 37 - % -42 -45 - dBc - - 1.9 deg.C/W Linear power gain IM3 Unit Transconductance GLP Rth(ch-c) Max. - Saturated drain current P1dB ID Limits Typ. 11 Min. - Output power at 1dB gain compression P.A.E. (Ta=25deg.C) VDS=10V, ID(RF off)=4.5A, f=3.4 - 3.6GHz 3rd order IM distortion *1 Thermal resistance *2 delta Vf method *1 : item -51, 2 tone test, Po=32dBm Single Carrier Level, f=3.6GHz, delta f=5MHz *2 : Channel-case MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004