140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz • High Collector Base Breakdown Voltage - BVCBO = 100 V (min) • High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage Value 70 Unit Vdc VCBO Collector-Base Voltage 100 Vdc VEBO Emitter-Base Voltage 3.0 Vdc IC Collector Current 400 mA 3.5 20 Watts mW/ ºC Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC MSC1314.PDF 10-25-99 MRF544 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO ICES Test Conditions Value Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 70 - - Vdc Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) 100 - - Vdc Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) 3.0 - - Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) - - 20 µA Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) - 1.0 100 µA 15 - - - Vdc (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit COB Output Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) - 2.5 - pF CIB Input Capacitance (VEB = 3Vdc, IE=0, f=1 MHz) - 6.1 - pF 1000 1500 - MHz fT Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 250 MHz) MSC1314.PDF 10-25-99 MRF544 FUNCTIONAL Symbol G U max MAG 2 |S21| Test Conditions Maximum Unilateral Gain Maximum Available Gain Insertion Gain Value Min. Typ. Max. Unit IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz - 13.5 - dB IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz - 13.5 - dB IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz 11.7 12.7 - dB Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA f S11 S21 S12 S22 100 |S11| 0.221 ∠φ -143 |S21| 8.54 ∠φ 97 |S12| 0.047 ∠φ 82 |S22| 0.508 ∠φ 14 200 0.219 -108 4.36 87 0.091 87 0.413 49 300 0.250 -72 2.98 79 0.141 87 0.406 82 400 0.329 -34 2.39 72 0.178 84 0.445 108 500 0.338 9 2.11 70 0.237 87 0.409 140 600 0.348 51 1.83 65 0.292 86 0.412 176 700 0.371 94 1.61 61 0.35 86 0.411 -147 800 0.374 140 1.44 59 0.383 85 0.413 -112 900 0.402 -170 1.45 63 0.428 88 0.386 -78 1000 0.438 -126 1.56 64 0.503 86 0.405 -42 (MHz) MSC1314.PDF 10-25-99 MRF544 MSC1314.PDF 10-25-99