ADPOW MRF544

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF544
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
Silicon NPN, high Frequency, high breakdown Transistor
•
Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
•
High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
•
High FT - 1400 MHz
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other
applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
70
Vdc
VCBO
Collector-Base Voltage
100
Vdc
VEBO
Emitter-Base Voltage
3.0
Vdc
IC
Collector Current
400
mA
3.5
20
Watts
mW/ ºC
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF544
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
ICES
Test Conditions
Value
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
70
-
-
Vdc
Collector-Base Breakdown Voltage
(IC= 100 µAdc, IE=0)
100
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
3.0
-
-
Vdc
Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
-
-
20
µA
Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
-
1.0
100
µA
15
-
-
-
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 6.0 Vdc)
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
COB
Output Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz)
-
2.5
-
pF
CIB
Input Capacitance
(VEB = 3Vdc, IE=0, f=1 MHz)
-
6.1
-
pF
1000
1500
-
MHz
fT
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 250 MHz)
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF544
FUNCTIONAL
Symbol
G
U max
MAG
|S21|
2
Test Conditions
Maximum Unilateral Gain
Maximum Available Gain
Insertion Gain
Value
Min.
Typ.
Max.
Unit
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
-
13.5
-
dB
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
-
13.5
-
dB
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
11.7
12.7
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
S11
|S11|
S21
0.221
∠φ
-143
0.219
|S21|
S12
8.54
∠φ
97
-108
4.36
0.250
-72
0.329
|S12|
S22
|S22|
0.047
∠φ
82
0.508
∠φ
14
87
0.091
87
0.413
49
2.98
79
0.141
87
0.406
82
-34
2.39
72
0.178
84
0.445
108
0.338
9
2.11
70
0.237
87
0.409
140
0.348
51
1.83
65
0.292
86
0.412
176
0.371
94
1.61
61
0.35
86
0.411
-147
0.374
140
1.44
59
0.383
85
0.413
-112
0.402
-170
1.45
63
0.428
88
0.386
-78
0.438
-126
1.56
64
0.503
86
0.405
-42
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF544
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.