140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, High Frequency Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz Low Noise Figure: NF = 2.5 dB (typ) @ f = 500 MHz • High FT - 4.5 GHz (typ) @ IC = 20 mAdc 2 1 3 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol VCEO VCBO VEBO IC Parameter Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 12 20 3.0 40 Vdc Vdc Vdc mA Total Device Dissipation @ TA = 25º C 200 mWatts Derate above 25º C 1.6 mW/ º C Thermal Data P D ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF914 STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 0.1 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) Min. Value Typ. Max. 12 - - Vdc 20 - - Vdc 3.0 - - Vdc - - 50 nA 30 - 200 - Unit STATIC (on) HFE DC Current Gain (IC = 20 mAdc, VCE = 10 Vdc) DYNAMIC Symbol fT CCB Test Conditions Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = .5 GHz) Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Value Typ. Max. - 4.5 - GHz - 0.7 - pF Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Unit Min. MRF914 FUNCTIONAL Symbol MAG S|21|2 NF GMAX Value Test Conditions Unit Min. Typ. Max. - 12 - dB 10 11 - dB - 2.5 - dB - 15 - dB Maximum Available Gain (IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) Insertion Gain (IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) Noise Figure (IC = 5.0 mAdc, VCE = 10 Vdc, f = 500 MHz) Maximum Available Power Gain (IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 20 mA f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| 100 .45 -36 15.6 115 .03 75 .67 -20 200 .32 -38 8.7 101 .05 78 .55 -19 300 .26 -36 6.3 91 .08 76 .54 -17 400 .24 -36 4.6 86 .1 74 .52 -22 500 .22 -39 3.8 84 .12 75 .48 -23 600 .21 -40 3.4 78 .15 71 .48 -26 700 .19 -44 3.0 72 .17 68 .47 -29 800 .18 -48 2.5 68 .19 65 .46 -35 900 .18 -58 2.4 69 .20 67 .44 -40 1000 .18 -65 2.4 62 .23 63 .45 -42 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ∠φ MRF914 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.