2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE RO-P-DS-3014 B Preliminary Information Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG™ MESFET Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility Description The MAAPGM0027-Die is a 2-stage power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. Primary Applications ♦ Wireless Local Loop 3.4-3.6 GHz ♦ MMDS 2.5-2.7 GHz ♦ Radar M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, IDQ ≈ 230mA2, Pin = 10 dBm Parameter Units f 2.0-4.0 GHz Output Power POUT 30 dBm Power Added Efficiency PAE 35 % 1-dB Compression Point P1dB 29 dBm Small Signal Gain G 22 dB Input VSWR VSWR 1.8:1 Output VSWR VSWR 1.4:1 Gate Supply Current IGG <2 mA Drain Supply Current IDD < 350 mA Output Third Order Intercept OTOI 37 dBm 3 Order Intermodulation Distortion Single Carrier Level = 21 dBm IM3 -15 dBm 5th Order Intermodulation Distortion Single Carrier Level = 21 dBm IM5 -39 dBm Noise Figure NF 6 dB Harmonic 2f -15 dBc 3 Harmonic 3f -25 dBc 2 nd rd 1 Typical Bandwidth rd 1. 2. Symbol TB = MMIC Base Temperature Adjust VGG between –2.4 and –1.5V to achieve indicated IDQ . M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE RO-P-DS-3014 B Preliminary Information Maximum Operating Conditions 3 Parameter Symbol Absolute Maximum Units Input Power PIN 15.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF, 40% Idss) IDQ 360 mA Quiescent DC Power Dissipated (No RF) PDISS 3.3 W Junction Temperature TJ 180 °C Storage Temperature TSTG -55 to +150 °C 310 °C Die Attach Temperature 3. Operation outside of these ranges may reduce product reliability. Operation at other than typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit Drain Supply Voltage VDD 4.0 8.0 10.0 V Gate Supply Voltage VGG -2.4 -2.0 -1.5 V Input Power PIN 10 13.0 dBm 150 °C Junction Temperature TJ Thermal Resistance ΘJC MMIC Base Temperature TB 23.9 °C/W Note 4 °C 4. Maximum MMIC Base Temperature = 150°C —ΘJC* VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. (See Note 2 above) 3. Adjust VGG to set IDQ. 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE RO-P-DS-3014 B Preliminary Information 50 50 POUT PAE 40 40 30 30 20 20 10 10 0 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 10 dBm. 50 50 POUT PAE 40 40 30 30 20 20 10 10 0 0 4 5 6 7 8 9 10 Drain Voltage (V) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 3 GHz. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE RO-P-DS-3014 B Preliminary Information 50 VDD = 4 VDD = 8 VDD = 6 VDD = 10 40 30 20 10 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 30 6 GAIN Input VSWR Output VSWR 25 5 20 4 15 3 10 2 5 1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Frequency (GHz) Figure 4. Small Signal and VSWR vs Frequency at VDD = 8V. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE RO-P-DS-3014 B Preliminary Information Mechanical Information Chip Size: 2.980 x 1.580 x 0.075 mm (117 x 62 x 3 mils) 2.980 mm. 1.490 mm. 0.127 mm. 1.580 mm. VDD 1.378 mm. OUT IN 0.840 mm. VGG 0.202 mm. 0.840 mm. 0 1.490 mm. 2.853 mm. 0 Figure 5. Die Chip edge to bond pad dimensions are shown to the center of the bond pad. Bond Pad Dimensions Pad Size (μm) Size (mils) RF In and Out 100 x 200 4x8 DC Drain Supply Voltage VDD 200 x 150 8x6 DC Gate Supply Voltage VGG 150 x 150 6x6 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE RO-P-DS-3014 B Preliminary Information VDD 0.1 μF 100 pF VDD RFOUT RFIN OUT IN VGG 100 pF VGG 0.1 μF Figure 6. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testAssembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.