MAAPGM0080-DIE Amplifier, Power, 1 W 2-18 GHz Rev Preliminary Datasheet Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage (6-10V) Operation ® ♦ MSAG Process Description The MAAPGM0080-DIE is a 2-stage 1 W distributed power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Also Available in: Primary Applications ♦ Electronic Warfare ♦ Ultra Wideband (UWB) ♦ Test Instrumentation SAMPLES Description Plastic Sample Board (Die) Mechanical Sample (Die) Part Number MAAP-000080-PKG003 MAAP-000080-SMB004 MAAP-000080-MCH000 Electrical Characteristics: TB = 10°C1, Z0 = 50Ω, VDD = 10V, IDQ = 750mA2, Pin = 22 dBm, RG = 130Ω Parameter 1. 2. Symbol Typical Units Bandwidth f 2.0-18.0 GHz Output Power POUT 30 dBm 1-dB Compression Point P1dB 29.5 dBm Small Signal Gain G 11.5 dB Power Added Efficiency PAE 11 % Input VSWR VSWR 1.5:1 Output VSWR VSWR 1.8:1 Gate Current IGG 5 mA Drain Current IDD 800 mA TB = MMIC Base Temperature Adjust VGG between –2.6 and –1.2V to achieve specified Idq. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAPGM0080-DIE Amplifier, Power, 1 W 2-18 GHz Rev Preliminary Datasheet Maximum Ratings3 Parameter Symbol Absolute Maximum Units Input Power PIN 27.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 0.78 A Quiescent DC Power Dissipated (No RF) PDISS 7.8 W Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 6.0 10.0 10.0 V Gate Voltage VGG -2.6 -2.0 -1.2 V Input Power PIN 22.0 25.0 dBm Thermal Resistance ΘJC 13.1 MMIC Base Temperature TB °C/W Note 5 °C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ Power Derating Curve, Quiescent (No RF) 9 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. Peak Power Dissipation (W) 8 7 6 5 4 3 2 2. Ramp VDD to desired voltage, typically 10.0 V. 1 3. Adjust VGG to set IDQ, (approximately @ –2.0 V). 0 4. Set RF input. 0 20 40 60 80 100 120 140 160 180 MMIC Base Temperature (ºC) 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAPGM0080-DIE Amplifier, Power, 1 W 2-18 GHz Rev Preliminary Datasheet 35 35 33 33 31 31 29 29 27 27 P1dB (dBm) 25 23 21 25 23 21 6V 19 6V 8V 10V 19 8V 17 17 10V 15 15 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 2 3 4 5 6 7 8 10 11 12 13 14 15 16 17 18 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency at Pin = 22dBm, and IDSQ=740mA Figure 2. 1dB Compression Point and Drain Voltage at IDSQ=750mA 35 35 33 33 31 31 29 29 27 25 23 21 27 25 23 21 6V 8V 10V 19 17 -20ºC 50ºC 120ºC 19 17 15 15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 2 3 4 5 6 7 8 Frequency (GHz) 11 12 13 14 15 16 17 18 35 6 6V 8V 10V Input VSWR Output VSWR 2.0 33 1.8 31 Output Power (dBm), SSG(dB), PAE (%) 16 10 Figure 4. Saturated Output Power vs. Frequency and Temperature at VD=10V and IDSQ=750mA. 20 18 9 Frequency (GHz) Figure 3. Saturated Output Power vs. Frequency and Drain Voltage 29 5 1.6 Pout SSG PAE IDS 27 14 25 12 23 4 VSWR Gain (dB) 9 Frequency (GHz) Psat (dBm) Psat (dBm) 2 10 8 3 1.4 1.2 21 1.0 19 17 0.8 15 6 0.6 13 4 2 11 0.4 9 2 0.2 7 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 5 0 10 20 30 40 50 60 70 80 90 100 110 0.0 120 Frequency (GHz) Junction Temperature (ºC) Figure 5. Small Signal Gain and Input and Output VSWR at IDSQ=750mA. Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 10V, 10GHz, and 750mA. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Drain Current (A) Pout (dBm) All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted. MAAPGM0080-DIE Amplifier, Power, 1 W 2-18 GHz Rev Preliminary Datasheet All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted. 20 40 38 18 36 34 16 14 30 28 Gain (dB) Output Power (dBm) 32 26 24 22 2 GHz 8 GHz 12 GHz 18 GHz 20 18 16 12 10 8 6 2 GHz 12 GHz 18 GHz 4 14 2 12 0 10 0 2 4 6 8 10 12 14 16 18 20 22 10 24 12 14 16 18 20 22 24 26 28 30 Input Power (dBm) Output Power (dBm) Figure 7. Output Power vs. Input Power and Frequency at 10V and 750mA Figure 8. Gain vs. Output Power and Frequency at 10V and 750mA. 32 2.0 20 1.8 18 2 GHz 8 GHz 12 GHz 18 GHz PAE (%) 14 1.6 1.4 Drain Current (A) 16 12 10 8 1.2 1.0 0.8 6 0.6 4 0.4 2 0.2 0 2 GHz 8 GHz 12 GHz 18 GHz 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and IDSQ=750mA. Figure 10. Drain Current vs. Input Power and Frequency at 10V and 750mA. 40 24 20 38 18 36 34 16 14 30 28 Gain (dB) Output Power (dBm) 32 26 24 22 2 GHz 8 GHz 12 GHz 18 GHz 20 18 16 12 10 8 6 4 2 GHz 12 GHz 18 GHz 14 2 12 10 0 0 2 4 6 8 10 12 14 16 18 20 22 24 10 12 14 16 18 20 22 24 26 28 30 Input Power (dBm) Output Power (dBm) Figure 11. Output Power vs. Input Power and Frequency at 8V and 750mA. Figure 12. Gain vs. Output Power and Frequency at 8V and 750mA. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 32 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAPGM0080-DIE Amplifier, Power, 1 W 2-18 GHz Rev Preliminary Datasheet All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted. 2.0 20 1.8 18 2 GHz 8 GHz 12 GHz 18 GHz PAE (%) 14 1.6 1.4 Drain Current (A) 16 12 10 8 1.2 1.0 0.8 6 0.6 4 0.4 2 0.2 0 2 GHz 8 GHz 12 GHz 18 GHz 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and IDSQ=750mA. Figure 14. Drain Current vs. Input Power and Frequency at 8V and 750mA 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 24 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAPGM0080-DIE Amplifier, Power, 1 W 2-18 GHz Rev Preliminary Datasheet Mechanical Information (124 x 124 x 3 mils) 76.46 VDD Chip Size: 3.150 x 3.150 x 0.075 mm 124.02 84.96 OUT 24.63 IN 124.02 0.00 75.83 VGG 0.00 Chip edge to bond pad dimensions are shown to the center of the bond pad (mils). Figure 1. Die Layout Bond Pad Dimensions Pad Size (μm) Size (mils) RF In and Out 100 x 200 4x8 DC Drain Supply Voltage VDD 200 x 150 8x6 DC Gate Supply Voltage VGG 150 x 150 6x6 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAPGM0080-DIE Amplifier, Power, 1 W 2-18 GHz Rev Preliminary Datasheet Assembly and Bonding Diagram VDD 0.1 μF 100 pF RFOUT RFIN 100 pF VGG 0.1 μF 130 Ω Figure 2. Recommended operational configuration. Wire bond as shown. Assembly Instructions: Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 °C to less than 5 minutes. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.