MA-COM MAAPGM0078-DIE

Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
Features
♦ 12 Watt Saturated Output Power Level
♦ Variable Drain Voltage (8-10V) Operation
♦ MSAG™ Process
Description
The MAAPGM0078-DIE is a 2-stage 12W power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input and
output. It can be used as a power amplifier stage or as a driver stage in high
power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is
100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and
polyimide scratch protection for ease of use with automated manufacturing
processes. The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications
♦
♦
♦
♦
Also Available in:
Radio Communications
SatCom
Radar
EW
Description
Ceramic Package
Sample Board (Die)
Sample Board (Pkg)
Mechanical Sample (Die)
Part Number
MAAP-000078-PKG001
MAAP-000078-SMB004
MAAP-000078-SMB001
MAAP-000078-MCH000
Electrical Characteristics: TB = 55°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 2.8A2, Pin = 24 dBm, RG=30 Ω
Parameter
1
1.
2.
Symbol
Typical
Units
Bandwidth
f
2.0-6.0
GHz
Output Power
POUT
41
dBm
1-dB Compression Point
P1dB
40
dBm
Small Signal Gain
G
20
dB
Power Added Efficiency
PAE
28
%
Input VSWR
VSWR
1.4:1
Output VSWR
VSWR
2.3:1
Gate Current
IGG
30
mA
Drain Current, under RF Drive
IDD
4.1
A
2nd Harmonic (4 GHz)
2f
30
dBc
2nd Harmonic (6 GHz)
2f
67
dBc
TB = MMIC Base Temperature
Adjust VGG between –2.6 and –1.5V to achieve specified Idq.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
Maximum Ratings3
Parameter
Symbol
Absolute Maximum
Units
Input Power
PIN
29
dBm
Drain Supply Voltage
VDD
+12.0
V
Gate Supply Voltage
VGG
-3.0
V
Quiescent Drain Current (No RF)
IDQ
4.5
A
Quiescent DC Power Dissipated (No RF)
PDISS
45.1
W
Junction Temperature
TJ
170
°C
Storage Temperature
TSTG
-55 to +150
°C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions4
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
VDD
8.0
10.0
10.0
V
Gate Voltage
VGG
-2.6
-2.2
-1.5
V
26
Input Power
PIN
24.0
Thermal Resistance
ΘJC
2.9
MMIC Base Temperature
TB
dBm
°C/W
Note 5
°C
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ
Power Derating Curve, Quiescent (No RF)
50
Operating Instructions
This device is static sensitive. Please handle with care. To
operate the device, follow these steps.
1. Apply VGG = -2.7 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 10.0 V.
3. Adjust VGG to set IDQ, (approximately @ –2.2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn VGG off last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Peak Power Dissipation (W)
45
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
MMIC Base Temperature (ºC)
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
180
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
50
50
47
45
47
44
40
44
41
35
41
38
30
38
35
25
32
20
29
15
26
10
35
32
29
6V
8V
10V
26
23
Pout
PAE
23
P1dB (dBm)
50
PAE (%)
Pout (dBm)
All Data is at 55ºC MMIC base temperature, CW stimulus, unless otherwise noted.
5
20
20
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.0
2.5
3.0
3.5
6.5
4.0
4.5
5.0
5.5
6.0
6.5
Frequency (GHz)
Frequency (GHz)
Figure 2. 1dB Compression Point and Drain Voltage at 25% IDSS
50
50
47
47
44
44
41
41
38
Psat (dBm)
Psat (dBm)
Figure 1. Output Power and Power Added Efficiency
at VD = 10V, Pin = 24dBm, and 25% IDSS
35
32
29
38
35
32
29
6V
8V
10V
26
23
23
20
2.0
2.5
10ºC
55ºC
110ºC
26
3.0
3.5
4.0
4.5
5.0
5.5
6.0
20
2.00
6.5
2.50
3.00
3.50
Frequency (GHz)
4.00
4.50
5.00
5.50
6.00
6.50
Frequency (GHz)
Figure 4. Saturated Output Power vs. Frequency and Temperature at
10V and 25% IDSS
Figure 3. Saturated Output Power vs. Frequency and Drain Voltage at
25% IDSS
30
6
28
50
5.3
46
5.2
42
5.1
38
5.0
34
4.9
30
4.8
26
4.7
5
22
18
4
Gain
Input VSWR
Output VSWR
16
14
VSWR
Gain (dB)
20
12
3
10
8
6
2
4
22
4.6
Pout
SSG
PAE
IDS
18
14
2
0
1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Frequency (GHz)
Figure 5. Small Signal Gain and Input and Output VSWR
at 25% IDSS, VD = 10V
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Drain Current (A)
24
Output Power (dBm), SSG(dB),
PAE (%)
26
4.5
4.4
10
30
40
50
60
70
80
90
100
110
120
130
140
4.3
150
Junction Temperature (ºC)
Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and
Drain Current vs. Junction Temperature at 10V, 4 GHz, and 25% IDSS
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
All Data is at 55ºC MMIC base temperature, CW stimulus, unless otherwise noted.
25
45
43
23
41
21
39
19
35
33
Gain (dB)
Output Power (dBm)
37
31
29
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
27
25
23
21
17
15
13
11
2 GHz
4 GHz
6 GHz
9
19
7
17
5
15
4
6
8
10
12
14
16
18
20
22
24
26
20
28
24
26
28
30
32
34
36
38
40
42
44
46
48
Output Power (dBm)
Figure 7. Output Power vs. Input Power and Frequency at 10V and 25% IDSS
Figure 8. Gain vs. Output Power and Frequency at 10V and 25% IDSS
50
50
6.0
45
5.5
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
35
5.0
4.5
Drain Current (A)
40
PAE (%)
22
Input Power (dBm)
30
25
20
15
4.0
3.5
3.0
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
2.5
10
2.0
5
1.5
0
4
6
8
10
12
14
16
18
20
22
24
26
28
1.0
4
Input Power (dBm)
6
8
10
12
14
16
18
20
22
24
26
28
Input Power (dBm)
Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and
25% IDSS
Figure 10. Drain Current vs. Input Power and Frequency at 10V and 25% IDSS
45
25
43
23
41
39
21
19
35
33
Gain (dB)
Output Power (dBm)
37
31
29
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
27
25
23
21
17
15
13
11
9
2 GHz
4 GHz
6 GHz
19
7
17
15
5
4
6
8
10
12
14
16
18
20
22
24
26
28
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
Input Power (dBm)
Output Power (dBm)
Figure 11. Output Power vs. Input Power and Frequency at 8V and 25% IDSS
Figure 12. Gain vs. Output Power and Frequency at 8V and 25% IDSS
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
50
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
All Data is at 55ºC MMIC base temperature, CW stimulus, unless otherwise noted.
6.0
50
45
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
5.0
4.5
Drain Current (A)
35
PAE (%)
5.5
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
40
30
25
20
15
4.0
3.5
3.0
2.5
10
2.0
5
1.5
0
4
6
8
10
12
14
16
18
20
22
24
26
28
1.0
4
Input Power (dBm)
Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and
25% IDSS
6
8
10
12
14
16
18
20
22
24
26
28
Input Power (dBm)
Figure 14. Drain Current vs. Input Power and Frequency at 8V and 25% IDSS
100
90
4 dBm
8 dBm
12 dBm
16 dBm
20 dBm
24 dBm
70
60
50
40
2
nd
Harmonic (dBc)
80
30
20
10
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Frequency (GHz)
Figure 15. Second Harmonic vs. Frequency and Input Power at 10V and 25%
IDSS
Figure 16. Fixture used to characterize MAAPGM0078-DIE
under CW stimulus.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
Mechanical Information
Chip Size: 5.000 x 6.346 x 0.075 mm
(197 x 250 x 3 mils)
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Figure 17. Die Layout
Bond Pad Dimensions
Pad
Size (μm)
Size (mils)
RF In and Out
100 x 200
4x8
DC Drain Supply Voltage VD1
200 x 150
8x6
DC Drain Supply Voltage VD2
500 x 200
20 x 8
DC Gate Supply Voltage VG1
150 x 150
6x6
DC Gate Supply Voltage VG2
150 x 125
6x5
6
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
VDD
Assembly and Bonding Diagram
Thermal Management is critical on this
part. Refer to Application Note AN3019
for applicable guidelines.
0.010.1 F
VDD
VGG
2.
3.
4.
100200
pF
100200
pF
Gate
Crossover
NOTE 2: In implementing the DC/ RF crossover shown, the following rules must applied.
the DC crossovers should approach and
cross the RF trace at a 90 degree angle;
the printed DC traces that approach the
RF line should be stopped 2 substrate
heights from the RF line edge;
the rated current capability of the DC
crossovers should be greater than the
maximum current of the device; and
the wires or ribbons used to make the
DC crossovers should clear the RF trace
by ~ 1 substrate height.
100200
pF
RF
NOTE 1: All Application Notes may be accessed by going to http://www.macom.com/
Application%20Notes/index.htm.
1.
100200
pF
Gnd
Drain
Crossover
RFOUT
RFIN
100200
pF
100200
pF
100200
pF
100200
pF
30
VGG
0.010.1 F
GND
Figure 18. Recommended operational configuration. Wire bond as shown.
Die Handling:
Refer to Application Note AN3016.
Assembly Instructions:
Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 °C to less than
7 minutes. Refer to Application Note AN3017 for more detailed information.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge
bond techniques. For DC pad connections, use either ball or wedge bonds. For best
RF performance, use wedge bonds of shortest length, although ball bonds are also
acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
7
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.