Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet Features ♦ 12 Watt Saturated Output Power Level ♦ Variable Drain Voltage (8-10V) Operation ♦ MSAG™ Process Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ ♦ ♦ ♦ Also Available in: Radio Communications SatCom Radar EW Description Ceramic Package Sample Board (Die) Sample Board (Pkg) Mechanical Sample (Die) Part Number MAAP-000078-PKG001 MAAP-000078-SMB004 MAAP-000078-SMB001 MAAP-000078-MCH000 Electrical Characteristics: TB = 55°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 2.8A2, Pin = 24 dBm, RG=30 Ω Parameter 1 1. 2. Symbol Typical Units Bandwidth f 2.0-6.0 GHz Output Power POUT 41 dBm 1-dB Compression Point P1dB 40 dBm Small Signal Gain G 20 dB Power Added Efficiency PAE 28 % Input VSWR VSWR 1.4:1 Output VSWR VSWR 2.3:1 Gate Current IGG 30 mA Drain Current, under RF Drive IDD 4.1 A 2nd Harmonic (4 GHz) 2f 30 dBc 2nd Harmonic (6 GHz) 2f 67 dBc TB = MMIC Base Temperature Adjust VGG between –2.6 and –1.5V to achieve specified Idq. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet Maximum Ratings3 Parameter Symbol Absolute Maximum Units Input Power PIN 29 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 4.5 A Quiescent DC Power Dissipated (No RF) PDISS 45.1 W Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 8.0 10.0 10.0 V Gate Voltage VGG -2.6 -2.2 -1.5 V 26 Input Power PIN 24.0 Thermal Resistance ΘJC 2.9 MMIC Base Temperature TB dBm °C/W Note 5 °C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ Power Derating Curve, Quiescent (No RF) 50 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 10.0 V. 3. Adjust VGG to set IDQ, (approximately @ –2.2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Peak Power Dissipation (W) 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 MMIC Base Temperature (ºC) • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 180 Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet 50 50 47 45 47 44 40 44 41 35 41 38 30 38 35 25 32 20 29 15 26 10 35 32 29 6V 8V 10V 26 23 Pout PAE 23 P1dB (dBm) 50 PAE (%) Pout (dBm) All Data is at 55ºC MMIC base temperature, CW stimulus, unless otherwise noted. 5 20 20 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.0 2.5 3.0 3.5 6.5 4.0 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Frequency (GHz) Figure 2. 1dB Compression Point and Drain Voltage at 25% IDSS 50 50 47 47 44 44 41 41 38 Psat (dBm) Psat (dBm) Figure 1. Output Power and Power Added Efficiency at VD = 10V, Pin = 24dBm, and 25% IDSS 35 32 29 38 35 32 29 6V 8V 10V 26 23 23 20 2.0 2.5 10ºC 55ºC 110ºC 26 3.0 3.5 4.0 4.5 5.0 5.5 6.0 20 2.00 6.5 2.50 3.00 3.50 Frequency (GHz) 4.00 4.50 5.00 5.50 6.00 6.50 Frequency (GHz) Figure 4. Saturated Output Power vs. Frequency and Temperature at 10V and 25% IDSS Figure 3. Saturated Output Power vs. Frequency and Drain Voltage at 25% IDSS 30 6 28 50 5.3 46 5.2 42 5.1 38 5.0 34 4.9 30 4.8 26 4.7 5 22 18 4 Gain Input VSWR Output VSWR 16 14 VSWR Gain (dB) 20 12 3 10 8 6 2 4 22 4.6 Pout SSG PAE IDS 18 14 2 0 1 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Figure 5. Small Signal Gain and Input and Output VSWR at 25% IDSS, VD = 10V 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Drain Current (A) 24 Output Power (dBm), SSG(dB), PAE (%) 26 4.5 4.4 10 30 40 50 60 70 80 90 100 110 120 130 140 4.3 150 Junction Temperature (ºC) Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 10V, 4 GHz, and 25% IDSS • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet All Data is at 55ºC MMIC base temperature, CW stimulus, unless otherwise noted. 25 45 43 23 41 21 39 19 35 33 Gain (dB) Output Power (dBm) 37 31 29 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 27 25 23 21 17 15 13 11 2 GHz 4 GHz 6 GHz 9 19 7 17 5 15 4 6 8 10 12 14 16 18 20 22 24 26 20 28 24 26 28 30 32 34 36 38 40 42 44 46 48 Output Power (dBm) Figure 7. Output Power vs. Input Power and Frequency at 10V and 25% IDSS Figure 8. Gain vs. Output Power and Frequency at 10V and 25% IDSS 50 50 6.0 45 5.5 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 35 5.0 4.5 Drain Current (A) 40 PAE (%) 22 Input Power (dBm) 30 25 20 15 4.0 3.5 3.0 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 2.5 10 2.0 5 1.5 0 4 6 8 10 12 14 16 18 20 22 24 26 28 1.0 4 Input Power (dBm) 6 8 10 12 14 16 18 20 22 24 26 28 Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and 25% IDSS Figure 10. Drain Current vs. Input Power and Frequency at 10V and 25% IDSS 45 25 43 23 41 39 21 19 35 33 Gain (dB) Output Power (dBm) 37 31 29 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 27 25 23 21 17 15 13 11 9 2 GHz 4 GHz 6 GHz 19 7 17 15 5 4 6 8 10 12 14 16 18 20 22 24 26 28 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Input Power (dBm) Output Power (dBm) Figure 11. Output Power vs. Input Power and Frequency at 8V and 25% IDSS Figure 12. Gain vs. Output Power and Frequency at 8V and 25% IDSS 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 50 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet All Data is at 55ºC MMIC base temperature, CW stimulus, unless otherwise noted. 6.0 50 45 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 5.0 4.5 Drain Current (A) 35 PAE (%) 5.5 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 40 30 25 20 15 4.0 3.5 3.0 2.5 10 2.0 5 1.5 0 4 6 8 10 12 14 16 18 20 22 24 26 28 1.0 4 Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and 25% IDSS 6 8 10 12 14 16 18 20 22 24 26 28 Input Power (dBm) Figure 14. Drain Current vs. Input Power and Frequency at 8V and 25% IDSS 100 90 4 dBm 8 dBm 12 dBm 16 dBm 20 dBm 24 dBm 70 60 50 40 2 nd Harmonic (dBc) 80 30 20 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Figure 15. Second Harmonic vs. Frequency and Input Power at 10V and 25% IDSS Figure 16. Fixture used to characterize MAAPGM0078-DIE under CW stimulus. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet Mechanical Information Chip Size: 5.000 x 6.346 x 0.075 mm (197 x 250 x 3 mils) Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 17. Die Layout Bond Pad Dimensions Pad Size (μm) Size (mils) RF In and Out 100 x 200 4x8 DC Drain Supply Voltage VD1 200 x 150 8x6 DC Drain Supply Voltage VD2 500 x 200 20 x 8 DC Gate Supply Voltage VG1 150 x 150 6x6 DC Gate Supply Voltage VG2 150 x 125 6x5 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet VDD Assembly and Bonding Diagram Thermal Management is critical on this part. Refer to Application Note AN3019 for applicable guidelines. 0.010.1 F VDD VGG 2. 3. 4. 100200 pF 100200 pF Gate Crossover NOTE 2: In implementing the DC/ RF crossover shown, the following rules must applied. the DC crossovers should approach and cross the RF trace at a 90 degree angle; the printed DC traces that approach the RF line should be stopped 2 substrate heights from the RF line edge; the rated current capability of the DC crossovers should be greater than the maximum current of the device; and the wires or ribbons used to make the DC crossovers should clear the RF trace by ~ 1 substrate height. 100200 pF RF NOTE 1: All Application Notes may be accessed by going to http://www.macom.com/ Application%20Notes/index.htm. 1. 100200 pF Gnd Drain Crossover RFOUT RFIN 100200 pF 100200 pF 100200 pF 100200 pF 30 VGG 0.010.1 F GND Figure 18. Recommended operational configuration. Wire bond as shown. Die Handling: Refer to Application Note AN3016. Assembly Instructions: Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 °C to less than 7 minutes. Refer to Application Note AN3017 for more detailed information. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.