May 2008 FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ Features General Description ■ 7.5 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky diode ■ Low gate charge (10nC typical) ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode. Applications ■ DC/DC converter ■ Motor drives D1 D1 5 4 Q1 D2 6 D2 SO-8 Pin 1 S2 G2 S1 7 G1 3 Q2 2 8 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation for Dual Operation – Continuous Ratings Units 30 V (Note 1a) – Pulsed V 7.5 A 20 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) TJ, TSTG ±20 Operating and Storage Junction Temperature Range W 0.9 –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6990AS FDS6990AS 13" 12mm 2500 units ©2008 Fairchild Semiconductor Corporation FDS6990AS Rev. A1 1 www.fairchildsemi.com FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ M Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 3 V mV/°C 31 On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.7 ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C –3 RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 7.5 A VGS = 10 V, ID = 7.5 A, TJ = 125°C VGS = 4.5 V, ID = 6.5 A 17 26 21 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 15 V, ID = 10 A 29 VDS = 15 V, VGS = 0 V, f = 1.0 MHz 550 pF 330 pF 60 pF VGS = 15 mV, f = 1.0 MHz 3.1 Ω mV/°C 22 35 28 20 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 8 tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg(TOT) Total Gate Charge at Vgs = 10V Qg Total Gate Charge at Vgs = 5V Qgs Gate–Source Charge 1.5 nC Qgd Gate–Drain Charge 2.0 nC VDS = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω VDD = 15 V, ID = 10 A, VGS = 5 V 16 ns 5 10 ns 24 38 ns 4 88 ns 9 18 ns 8 16 ns 14 24 ns 5 10 ns 10 14 nC 6 8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A trr Diode Reverse Recovery Time IF = 10A, Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs 2 FDS6990AS Rev. A1 (Note 2) (Note 3) 0.6 2.9 A 0.7 V 18 nS 11 nC www.fairchildsemi.com FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics TA = 25°C unless otherwise noted 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. 4 3 FDS6990AS Rev. A1 www.fairchildsemi.com FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ Notes: 2 20 3.5V I D, DRAIN CURRENT (A) 4.5V VGS = 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.0V 15 3.0V 10 5 2.5V 0 1.8 1.6 3.5V 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 0.8 0 0.5 1 1.5 2 0 4 8 12 I D, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 0.07 I D = 7.5A VGS = 10V I D = 3.75A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.06 0.05 0.04 TA = 125 oC 0.03 0.02 T A = 25 oC 0.6 0.01 -50 -25 0 25 50 75 100 125 2 150 4 TJ , JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 100 VGS = 0V IS , REVERSE DRAIN CURRENT (A) VDS = 5V 16 I D, DRAIN CURRENT (A) 16 12 8 o TA = 125 C -55 oC 4 25o C 0 10 1 T A = 125 o C 0.1 25 oC -55 o C 0.01 0.001 1.5 2 2.5 3 3.5 0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.4 0.6 0.8 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4 FDS6990AS Rev. A1 0.2 VSD , BODY DIODE FORWARD VOLTAGE (V) www.fairchildsemi.com FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics 10 1500 f = 1MHz VGS = 0V 8 1200 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) I D =7.5A 20V 6 15V 4 900 Ciss 600 Coss 2 300 Crss 0 0 0 2 4 6 8 10 12 0 5 Q g, GATE CHARGE (nC) 10 15 20 Figure 7. Gate Charge Characteristics. 30 Figure 8. Capacitance Characteristics. 50 100 SINGLE PULSE R θJA = 135°C/W TA = 25°C P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100µs I D, DRAIN CURRENT (A) 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 1ms 10 10ms 100s 1s 1 10s DC VGS = 10V SINGLE PULSE R θJA = 135 oC/W 0.1 TA = 25 oC 0.01 40 30 20 10 0 0.1 1 10 100 0.001 0.01 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area. 1 t1 , TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA(t) = r(t) * R θ JA R θJA = 135 °C/W 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 0.01 t2 0.01 T J – TA = P * R θJA(t) Duty Cycle, D = t 1 / t 2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 5 FDS6990AS Rev. A1 www.fairchildsemi.com FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6990AS. 0.4A/Div I DSS, REVERSE LEAKAGE CURRENT (A) 0.1 0.01 TA = 125° C 0.001 TA = 100° C 0.0001 0.00001 TA = 25°C 0.000001 0 5 10 15 20 25 30 VDS , REVERSE VOLTAGE (V) Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 12.5nS/Div Figure 12. FDS6990AS SyncFET body diode reverse recovery characteristic. 0.4A/Div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6990A). 12.5nS/Div Figure 13. Non-SyncFET (FDS6990A) body diode reverse recovery characteristic. 6 FDS6990AS Rev. A1 www.fairchildsemi.com FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) L VDS BVDSS tP VGS RGE VDS + DUT IAS VDD VGS VDD – 0V IAS tp vary tP to obtain required peak IAS 0.01Ω tAV Figure 15. Unclamped Inductive Load Test Circuit Figure 16. Unclamped Inductive Waveforms Drain Current Same type as DUT + 50k 10V - 10 F + 1 F VDD QG(TOT) – VGS 10V DUT QGD QGS VGS Ig(REF) Charge, (nC) Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform tON VDS RL VDS tr 90% tOFF td(OFF) tf 90% + VGS RGEN td(ON) VDD DUT 10% 0V – 10% 90% VGS VGS 50% Pulse Width ≤ 1µs Duty Cycle ≤ 0.1% 0V Figure 19. Switching Time Test Circuit 50% Pulse Width Figure 20. Switching Time Waveforms 7 FDS6990AS Rev. A1 10% www.fairchildsemi.com FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDS6990AS Rev. A1 WWW. fairchildsemicom