Logic Controlled,
High-Side Power Switches
ADP190/ADP191
FEATURES
APPLICATIONS
Mobile phones
Digital cameras and audio devices
Portable and battery-powered equipment
TYPICAL APPLICATIONS CIRCUIT
VIN
ADP190
VOUT
+
GND
–
LEVEL SHIFT
AND SLEW
RATE CONTROL
ON
LOAD
07874-001
EN OFF
Figure 1.
VIN
ADP191
VOUT
+
–
GND
ON
EN OFF
LEVEL SHIFT
AND SLEW
RATE CONTROL
AND LOAD
DISCHARGE
LOAD
07874-102
Low RDSON of 105 mΩ at 1.8 V
Internal output discharge resistor (ADP191)
Turn-on slew rate limiting (ADP191)
Low input voltage range: 1.1 V to 3.6 V
500 mA continuous operating current
Built-in level shift for control logic that can be operated
by 1.2 V logic
Low 2 μA (maximum) ground current
Ultralow shutdown current: <1 μA
Ultrasmall 0.8 mm × 0.8 mm, 4-ball, 0.4 mm pitch WLCSP
Figure 2.
GENERAL DESCRIPTION
The ADP190/ADP191 are high-side load switches designed for
operation from 1.1 V to 3.6 V. These load switchs provide power
domain isolation for extended power battery life. The devices
contain a low on-resistance P-channel MOSFET that supports
more than 500 mA of continuous current and minimizes power
loss. The low 2 μA (maximum) of ground current and ultralow
shutdown current make the ADP190/ADP191 ideal for batteryoperated portable equipment. The built-in level shifter for enable
logic makes the ADP190/ADP191 compatible with modern
processors and GPIO controllers.
The ADP191 controls the turn-on slew rate of the switch to
reduce the input inrush current. The ADP191 also incorporates
an internal output discharge resistor to discharge the output
capacitance when the ADP191 output is disabled.
Beyond operating performance, the ADP190/ADP191 occupy
minimal printed circuit board (PCB) space with an area less than
0.64 mm2 and a height of 0.60 mm. It is available in an ultrasmall
0.8 mm × 0.8 mm, 4-ball, 0.4 mm pitch WLCSP.
Rev. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
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Fax: 781.461.3113 ©2009-2010 Analog Devices, Inc. All rights reserved.
ADP190/ADP191
TABLE OF CONTENTS
Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................6
Applications....................................................................................... 1
Typical Performance Characteristics ..............................................7
Typical Applications Circuit............................................................ 1
Theory of Operation .........................................................................9
General Description ......................................................................... 1
Applications Information .............................................................. 10
Revision History ............................................................................... 2
Ground Current.......................................................................... 10
Specifications..................................................................................... 3
Enable Feature ............................................................................ 10
Timing Diagram ........................................................................... 4
Timing ......................................................................................... 10
Absolute Maximum Ratings............................................................ 5
Thermal Considerations............................................................ 12
Thermal Data ................................................................................ 5
PCB Layout Considerations...................................................... 14
Thermal Resistance ...................................................................... 5
Outline Dimensions ....................................................................... 15
ESD Caution.................................................................................. 5
Ordering Guide .......................................................................... 15
REVISION HISTORY
11/10—Rev. C to Rev. D
Changed 4 mΩ to 4 MΩ in Theory of Operation Section .......... 9
3/10—Rev. B to Rev. C
Change to Low Input Voltage Range Value................ Throughout
1/10—Rev. A to Rev. B
Added ADP191 .............................................................. Throughout
Changes to Table 1............................................................................ 3
Changes to Table 3............................................................................ 5
Changes to Ordering Guide .......................................................... 15
9/09—Rev. 0 to Rev. A
Changes to Ordering Guide .......................................................... 13
1/09—Revision 0: Initial Version
Rev. D | Page 2 of 16
ADP190/ADP191
SPECIFICATIONS
VIN = 1.8 V, VEN = VIN, ILOAD = 200 mA, TA = 25°C, unless otherwise noted.
Table 1. ADP190
Parameter
INPUT VOLTAGE RANGE
EN INPUT
EN Input Threshold
Symbol
VIN
Test Conditions
TJ = −40°C to +85°C
Min
1.1
VEN_TH
Logic High Voltage
Logic Low Voltage
EN Input Pull-Down Resistance
CURRENT
Ground Current1
Shutdown Current
VIH
VIL
REN
1.1 V ≤ VIN ≤ 1.3 V, TJ = −40°C to +85°C
1.3 V < VIN < 1.8 V, TJ = −40°C to +85°C
1.8 V ≤ VIN ≤ 3.6 V, TJ = −40°C to +85°C
1.1 V ≤ VIN ≤ 3.6 V
1.1 V ≤ VIN ≤ 3.6 V
0.3
0.4
0.45
1.1
VIN to VOUT RESISTANCE
RDSON
VOUT TIME
Turn-On Delay Time
Turn-On Delay Time
1
IGND
IOFF
tON_DLY
tON_DLY
Typ
Max
3.6
Unit
V
1.0
1.2
1.2
V
V
V
V
V
MΩ
0.3
4
VIN = 3.6 V, VOUT open, TJ = −40°C to +85°C
EN = GND
EN = GND, TJ = −40°C to +85°C
0.1
2
VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V
VIN = 2.5 V, ILOAD = 200 mA, EN = 1.5 V
VIN = 1.8 V, ILOAD = 200 mA, EN = 1.5 V
VIN = 1.5 V, ILOAD = 200 mA, EN = 1.5 V
VIN = 1.2 V, ILOAD = 200 mA, EN = 1 V
80
90
105
125
160
ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 μF
VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 μF
5
1.5
2
130
μA
μA
μA
mΩ
mΩ
mΩ
mΩ
mΩ
μs
μs
Ground current includes EN pull-down current.
Table 2. ADP191
Parameter
INPUT VOLTAGE RANGE
EN INPUT
EN Input Threshold
Symbol
VIN
Test Conditions
TJ = −40°C to +85°C
Min
1.1
VEN_TH
Logic High Voltage
Logic Low Voltage
EN Input Pull-Down Resistance
CURRENT
Ground Current1
Shutdown Current
VIH
VIL
REN
1.1 V ≤ VIN ≤ 1.3 V, TJ = −40°C to +85°C
1.3 V < VIN < 1.8 V, TJ = −40°C to +85°C
1.8 V ≤ VIN ≤ 3.6 V, TJ = −40°C to +85°C
1.1 V ≤ VIN ≤ 3.6 V
1.1 V ≤ VIN ≤ 3.6 V
0.3
0.4
0.45
1.1
VIN to VOUT RESISTANCE
RDSON
VOUT DISCHARGE RESISTANCE
VOUT TIME
Turn-On Delay Time
Turn-On Delay Time
1
IGND
IOFF
Max
3.6
Unit
V
1.0
1.2
1.2
V
V
V
V
V
MΩ
0.3
4
VIN = 3.6 V, VOUT open, TJ = −40°C to +85°C
EN = GND
EN = GND, TJ = −40°C to +85°C
2
0.1
2
VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V
VIN = 2.5 V, ILOAD = 200 mA, EN = 1.5 V
VIN = 1.8 V, ILOAD = 200 mA, EN = 1.5 V
VIN = 1.5 V, ILOAD = 200 mA, EN = 1.5 V
VIN = 1.2 V, ILOAD = 200 mA, EN = 1 V
80
90
105
125
160
215
ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 μF
VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 μF
80
50
RDIS
tON_DLY
tON_DLY
Typ
Ground current includes EN pull-down current.
Rev. D | Page 3 of 16
130
μA
μA
μA
mΩ
mΩ
mΩ
mΩ
mΩ
Ω
μs
μs
ADP190/ADP191
TIMING DIAGRAM
VEN
TURN-OFF
DELAY
TURN-ON
DELAY
90%
VOUT
TURN-ON
RISE
TURN-OFF
FALL
Figure 3. Timing Diagram
Rev. D | Page 4 of 16
07874-003
10%
ADP190/ADP191
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
VIN to GND Pins
VOUT to GND Pins
EN to GND Pins
Continuous Drain Current
TA = 25°C
TA = 85°C
Continuous Diode Current
Storage Temperature Range
Operating Junction Temperature Range
Soldering Conditions
Rating
−0.3 V to +4.0 V
−0.3 V to VIN
−0.3 V to +4.0 V
±1 A
±500 mA
−50 mA
−65°C to +150°C
−40°C to +125°C
JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP190/ADP191can be damaged when the
junction temperature limits are exceeded. Monitoring ambient
temperature does not guarantee that TJ is within the specified
temperature limits. In applications with high power dissipation
and poor PCB thermal resistance, the maximum ambient
temperature may need to be derated.
In applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (TJ) of
the device is dependent on the ambient temperature (TA), the
power dissipation of the device (PD), and the junction-to-ambient
thermal resistance of the package (θJA).
Maximum junction temperature (TJ) is calculated from the
ambient temperature (TA) and power dissipation (PD) using the
formula
Junction-to-ambient thermal resistance (θJA) of the package is
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θJA may vary, depending on
PCB material, layout, and environmental conditions. The specified values of θJA are based on a 4-layer, 4 inch × 3 inch PCB.
See JESD51-7 and JESD51-9 for detailed information regarding
board construction. For additional information, see the AN-617
application note, MicroCSPTM Wafer Level Chip Scale Package.
ΨJB is the junction-to-board thermal characterization parameter
with units of °C/W. ΨJB of the package is based on modeling and
calculation using a 4-layer board. The JESD51-12 document,
Guidelines for Reporting and Using Electronic Package Thermal
Information, states that thermal characterization parameters are
not the same as thermal resistances. ΨJB measures the component
power flowing through multiple thermal paths rather than through
a single path, as in thermal resistance (θJB). Therefore, ΨJB thermal
paths include convection from the top of the package as well as
radiation from the package, factors that make ΨJB more useful
in real-world applications. Maximum junction temperature (TJ)
is calculated from the board temperature (TB) and the power
dissipation (PD) using the formula
TJ = TB + (PD × ΨJB)
See JESD51-8, JESD51-9, and JESD51-12 for more detailed
information about ΨJB.
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
4-Ball, 0.4 mm Pitch WLCSP
ESD CAUTION
TJ = TA + (PD × θJA)
Rev. D | Page 5 of 16
θJA
260
ΨJB
58.4
Unit
°C/W
ADP190/ADP191
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
A
1
2
VIN
VOUT
B
EN
GND
07874-002
TOP VIEW
(Not to Scale)
Figure 4. Pin Configuration
Table 5. Pin Function Descriptions
Pin No.
A1
B1
A2
B2
Mnemonic
VIN
EN
VOUT
GND
Description
Input Voltage.
Enable Input. Drive EN high to turn on the switch; drive EN low to turn off the switch.
Output Voltage.
Ground.
Rev. D | Page 6 of 16
ADP190/ADP191
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 1.8 V, VEN = VIN > VIH, ILOAD = 100 mA, TA = 25°C, unless otherwise noted.
200
VOUT = 3.6V
ILOAD = 200mA
CLOAD = 1µF
VEN = 1.5V
T
VIN = 1.2V
180
VEN
RDS ON (mΩ)
160
140
VIN = 1.8V
120
1
VOUT
100
2
–40
–5
25
85
JUNCTION TEMPERATURE, TJ (°C)
07874-004
60
125
CH1 500mV CH2 2V
990mV
VOUT = 1.8V
ILOAD = 200mA
CLOAD = 1µF
VEN = 1.5V
T
ILOAD = 10mA
ILOAD = 100mA
ILOAD = 250mA
ILOAD = 350mA
ILOAD = 500mA
180
A CH1
Figure 8. ADP190 Turn-On Delay, Input Voltage = 3.6 V
Figure 5. RDSON vs. Temperature (Includes ~15 mΩ Trace Resistance)
200
M1.00µs
T
3.0µs
07874-007
VIN = 3.6V
80
VEN
RDS ON (mΩ)
160
140
VOUT
1
120
2
1.6
2.0
2.4
VIN (V)
2.8
3.2
3.6
CH1 500mV CH2 1V
1
IIN
60
40
2
20
VOUT
0
–20
0
50
100
150
200
LOAD (mA)
250
300
350
07874-006
3
Figure 7. Voltage Drop vs. Load Current (Includes ~15 mΩ Trace Resistance)
Rev. D | Page 7 of 16
CH1 2.00V
CH3 2.00V
CH2 100mA
M20.0µs
T 10.20%
A CH1
1.24V
Figure 10. ADP191 Turn-On Delay and Inrush Current
vs. Input Voltage = 3.6 V
07874-110
DIFFERENCE (mV)
80
990mV
VEN
T
VIN = 1.2V
VIN = 1.8V
VIN = 2.5V
VIN = 3.6V
A CH1
Figure 9. ADP190 Turn-On Delay, Input Voltage = 1.8 V
Figure 6. RDSON vs. Input Voltage, VIN (Includes ~15 mΩ Trace Resistance)
100
M4µs
T
12µs
07874-008
80
1.2
07874-005
100
ADP190/ADP191
1.3
VEN
T
1
1.2
GROUND CURRENT (µA)
IIN
2
VOUT
ILOAD = 10mA
ILOAD = 100mA
ILOAD = 250mA
ILOAD = 350mA
ILOAD = 500mA
1.1
1.0
0.9
0.8
CH2 50.0mA
M40.0µs
T 10.20%
A CH1
1.24V
0.7
–40
Figure 11. ADP191 Turn-On Delay and Inrush Current
vs. Input Voltage = 1.8 V
–5
25
85
JUNCTION TEMPERATURE, TJ (°C)
07874-009
CH1 2.00V
CH3 1.00V
07874-111
3
125
Figure 14. Ground Current vs. Temperature
2.0
T
VEN
1
GROUND CURRENT (µA)
1.8
1.6
ILOAD
ILOAD
ILOAD
ILOAD
ILOAD
= 10mA
= 100mA
= 250mA
= 350mA
= 500mA
1.4
1.2
1.0
VOUT
3
CH2 50.0mA
M200µs
T 10.20%
A CH1
600mV
0.6
1.2
2.2
2.7
3.2
3.6
VIN (V)
Figure 12. ADP191 Turn-Off Delay, Input Voltage = 3.6 V
Figure 15. Ground Current vs. Input Voltage, VIN
0.7
T
VIN = 1.2V
VEN
1
1.7
07874-010
CH1 2.00V
CH3 1.00V
07874-112
0.8
SHUTDOWN CURRENT (µA)
0.6
VIN = 1.8V
VIN = 2.5V
VIN = 3.6V
0.5
0.4
0.3
0.2
VOUT
M200µs
T 10.20%
A CH1
600mV
07874-113
CH1 2.00V CH2 50.0mA
CH3 500mV
0
–50
Figure 13. ADP191 Turn-Off Delay, Input Voltage = 1.8 V
–25
0
25
50
75
100
JUNCTION TEMPERATURE, TJ (°C)
Figure 16. Shutdown Current vs. Temperature
Rev. D | Page 8 of 16
125
07874-011
0.1
3
ADP190/ADP191
THEORY OF OPERATION
The ADP191 incorporates an internal output discharge resistor
to discharge the output capacitance when the ADP191 output is
disabled. The ADP191 also contains circuitry to limit the switch
turn-on slew rate to limit the inrush current.
ADP190
VIN
GND
VOUT
LEVEL SHIFT
AND SLEW
RATE CONTROL
07874-030
EN
Figure 17. ADP190 Functional Block Diagram
ADP191
VIN
GND
EN
VOUT
LEVEL SHIFT
AND SLEW
RATE CONTROL
AND LOAD
DISCHARGE
Figure 18. ADP191 Functional Block Diagram
Rev. D | Page 9 of 16
07874-118
The ADP190/ADP191are high-side PMOS load switches. They
are designed for supply operation from 1.1 V to 3.6 V. The PMOS
load switch is designed for low on resistance, 105 mΩ at VIN =
1.8 V, and supports 500 mA of continuous current. It is a low
ground current device with a nominal 4 MΩ pull-down resistor
on its enable pin. The package is a space-saving 0.8 mm ×
0.8 mm, 4-ball WLCSP.
ADP190/ADP191
APPLICATIONS INFORMATION
2.0
GROUND CURRENT
1.8
The major source for ground current in the ADP190/ADP191 is
the 4 MΩ pull-down on the enable (EN) pin. Figure 19 shows
typical ground current when VEN = VIN and VIN varies from 1.1 V
to 3.6 V.
1.6
VOUT (V)
1.4
2.0
VIN = 3.6V
1.8
1.2
1.0
0.8
0.4
0.2
1.4
VIN = 2.5V
0
0
1.2
0.2
0.3
0.4
0.5
0.6 0.7
VEN (V)
0.8
0.9
1.0
1.1
1.2
Figure 21. Typical EN Operation
1.0
VIN = 1.8V
0.8
0.6
0
50
100
150
200
LOAD (mA)
250
300
350
07874-013
VIN = 1.2V
Figure 19. Ground Current vs. Load Current
As shown in Figure 21, the EN pin has built-in hysteresis. This
prevents on/off oscillations that can occur due to noise on the
EN pin as it passes through the threshold points.
The EN pin active/inactive thresholds derive from the VIN
voltage; therefore, these thresholds vary with changing input
voltage. Figure 22 shows typical EN active/inactive thresholds
when the input voltage varies from 1.1 V to 3.6 V.
1.15
TYPICAL EN THRESHOLDS (V)
As shown in Figure 20, an increase in ground current can occur
when VEN ≠ VIN. This is caused by the CMOS logic nature of the
level shift circuitry as it translates an EN signal ≥ 1.1 V to
a logic high. This increase is a function of the VIN − VEN delta.
14
12
10
VOUT = 3.6V
IGND (µA)
0.1
07874-015
GROUND CURRENT (µA)
0.6
1.6
8
6
1.05
0.95
EN ACTIVE
0.85
0.75
0.65
EN INACTIVE
0.55
0.45
3.60
07874-016
3.45
3.30
3.15
3.00
2.85
2.70
2.55
2.25
2.40
2.10
1.95
1.80
1.65
1.50
VIN (V)
VOUT = 1.8V
Figure 22. Typical EN Pin Thresholds vs. Input Voltage, VIN
07874-014
0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5
VEN (V)
1.35
0.35
2
1.20
4
TIMING
Figure 20. Typical Ground Current when VEN ≠ VIN
ENABLE FEATURE
The ADP190/ADP191 use the EN pin to enable and disable the
VOUT pin under normal operating conditions. As shown in
Figure 21, when a rising voltage on EN crosses the active
threshold, VOUT turns on. When a falling voltage on EN
crosses the inactive threshold, VOUT turns off.
Turn-on delay is defined as the delta between the time that EN
reaches >1.1 V until VOUT rises to ~10% of its final value. The
ADP190/ADP191 include circuitry to set the typical 1.5 μs turnon delay at 3.6 V VIN to limit the VIN inrush current. As shown in
Figure 23, the turn-on delay is dependent on the input voltage.
Rev. D | Page 10 of 16
ADP190/ADP191
ILOAD = 100mA
CLOAD = 1µF
VEN = 3.6V
T
T
VEN
VEN
VOUT
1
VOUT = 2.5V
VOUT = 1.8V
2
VOUT = 1.2V
IIN
1
2
CH2 1V
M4µs
T
15.96µs
A CH1
2.34V
07874-017
CH1 1V
CH2 2V
CH1 2V
CH3 2.00mA Ω
Figure 23. ADP190 Typical Turn-On Delay Time with Varying Input Voltage
M10µs
T
40.16µs
A CH1
2.32V
07874-029
VOUT = 1.8V
ILOAD = 200mA
CLOAD = 1µF
VEN = 3.6V
3
Figure 25. ADP190 Typical Rise Time and Inrush Current with CLOAD = 1 μF
4.0
VEN
T
VOUT = 3.6V
1
3.5
IIN
2.5
2.0
VOUT = 1.8V
1.5
VEN = 1.8V
1.0
VOUT = 1.2V
2
VOUT
0
100
200
300
TIME (µs)
400
500
07874-124
0
Figure 24. ADP191 Typical Turn-On Delay Time with Varying Input Voltage
CH1 2.00V
CH3 2.00V
CH2 100mA
M20.0µs
T 10.20%
A CH1
1.24V
07874-126
3
0.5
Figure 26. ADP191 Typical Rise Time and Inrush Current with CLOAD = 1 μF
T
The rise time is defined as the delta between the time from 10%
to 90% of VOUT reaching its final value. It is dependent on the
RC time constant where C = load capacitance (CLOAD) and R =
RDSON||RLOAD. Because RDSON is usually smaller than RLOAD, an
adequate approximation for RC is RDSON × CLOAD. The ADP190/
ADP191 do not need any input or load capacitor, but capacitors
can be used to suppress noise on the board. If significant load
capacitance is connected, inrush current is a concern.
VEN
1
VOUT
2
IIN
The ADP191 contains circuitry to limit the slew rate of the
switch turn to reduce the turn on inrush current. See Figure 25
and Figure 26 for a comparison of rise time and inrush current.
VOUT = 1.8V
ILOAD = 200mA
CLOAD = 4.7µF
VEN= 3.6V
3
CH2 2V
CH1 2V
CH3 2.00mA Ω
M10µs
T
39.8µs
A CH1
1.00V
07874-019
INPUT VOLTAGE (V)
3.0
Figure 27. ADP190 Typical Rise Time and Inrush Current with CLOAD = 4.7 μF
Rev. D | Page 11 of 16
ADP190/ADP191
The turn-off time is defined as the delta between the time from
90% to 10% of VOUT reaching its final value. It is also dependent
on the RC time constant.
The ADP191 incorporates an internal output discharge resistor
to discharge the output capacitance when the ADP191 output is
disabled. See Figure 28 and Figure 29 for a comparison of turnoff times.
VOUT = 1.8V
VEN = 3.6V
T
ILOAD = 200mA,
CLOAD = 1µF
ILOAD = 100mA,
CLOAD = 4.7µF
Table 6. Typical θJA Values for WLCSP
Copper Size (mm2)
01
50
100
300
500
ILOAD = 100mA,
CLOAD = 1µF
1
2
CH2 500mV
M10µs
T
30.36µs
A CH1
1V
07874-020
VEN
CH1 1V
1
Device soldered to minimum size pin traces.
Package
4-Ball WLCSP
VEN
1
θJA (°C/W)
260
159
157
153
151
Table 7. Typical ΨJB Values
Figure 28. ADP190 Typical Turn-Off Time, Various Load Currents
T
To guarantee reliable operation, the junction temperature of
the ADP190/ADP191must not exceed 125°C. To ensure that the
junction temperature stays below this maximum value, the user
must be aware of the parameters that contribute to junction
temperature changes. These parameters include ambient temperature, power dissipation in the power device, and thermal
resistances between the junction and ambient air (θJA). The θJA
value is dependent on the package assembly compounds that
are used and the amount of copper used to solder the package
GND pin to the PCB. Table 6 shows typical θJA values of the 4-ball
WLCSP for various PCB copper sizes. Table 7 shows the typical
ΨJB value of the 4-ball WLCSP.
ΨJB
58.4
Unit
°C/W
The junction temperature of the ADP190/ADP191can be
calculated from the following equation:
TJ = TA + (PD × θJA)
(1)
where:
TA is the ambient temperature.
PD is the power dissipation in the die, given by
VOUT
PD = [(VIN − VOUT) × ILOAD] + (VIN × IGND)
3
M200µs
T 10.20%
A CH1
600mV
where:
ILOAD is the load current.
IGND is the ground current.
VIN and VOUT are the input and output voltages, respectively.
07874-129
CH1 2.00V
CH3 500mV
(2)
Figure 29. ADP191 Typical Turn-Off Time, Load Current = 0 mA
THERMAL CONSIDERATIONS
In most applications, the ADP190/ADP191 do not dissipate
much heat due to their low on-channel resistance. However, in
applications with high ambient temperature and load current,
the heat dissipated in the package can be large enough to cause
the junction temperature of the die to exceed the maximum
junction temperature of 125°C.
The junction temperature of the die is the sum of the ambient
temperature of the environment and the temperature rise of the
package due to the power dissipation, as shown in Equation 1.
Power dissipation due to ground current is quite small and
can be ignored. Therefore, the junction temperature equation
simplifies to the following:
TJ = TA + {[(VIN − VOUT) × ILOAD] × θJA}
(3)
As shown in Equation 3, for a given ambient temperature, inputto-output voltage differential, and continuous load current, there
exists a minimum copper size requirement for the PCB to ensure
that the junction temperature does not rise above 125°C. Figure 30
to Figure 35 show junction temperature calculations for different
ambient temperatures, load currents, VIN to VOUT differentials,
and areas of PCB copper.
Rev. D | Page 12 of 16
ADP190/ADP191
140
140
80
60
40
20
100
80
60
40
20
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
1.0
1.5
2.0
2.5
3.0
VIN – VOUT (V)
3.5
4.0
4.5
0
0.5
07874-021
0
0.5
Figure 30. 500 mm2 of PCB Copper, TA = 25°C
JUNCTION TEMPERATURE, TJ (°C)
JUNCTION TEMPERATURE, TJ (°C)
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
60
40
20
1.5
2.0
2.5
3.0
VIN – VOUT (V)
3.5
4.0
4.5
60
40
20
JUNCTION TEMPERATURE, TJ (°C)
60
40
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
2.0
2.5
3.0
VIN – VOUT (V)
3.5
4.0
4.5
07874-023
JUNCTION TEMPERATURE, TJ (°C)
1.5
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
2.0
2.5
3.0
VIN – VOUT (V)
3.5
4.0
4.5
MAX JUNCTION
TEMPERATURE
LOAD CURRENT = 1mA
LOAD CURRENT =
10mA
1.5
1.0
= 1mA
= 10mA
= 25mA
= 50mA
140
MAX JUNCTION
TEMPERATURE
1.0
LOAD CURRENT
LOAD CURRENT
LOAD CURRENT
LOAD CURRENT
Figure 34. 100 mm2 of PCB Copper, TA = 50°C
80
0
0.5
4.5
80
0
0.5
07874-022
1.0
100
20
4.0
100
Figure 31. 100 mm2 of PCB Copper, TA = 25°C
120
3.5
120
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
140
2.0
2.5
3.0
VIN – VOUT (V)
MAX JUNCTION TEMPERATURE
80
0
0.5
1.5
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
140
MAX JUNCTION TEMPERATURE
100
1.0
= 1mA
= 10mA
= 25mA
= 50mA
Figure 33. 500 mm2 of PCB Copper, TA = 50°C
140
120
LOAD CURRENT
LOAD CURRENT
LOAD CURRENT
LOAD CURRENT
07874-024
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
07874-025
100
MAX JUNCTION TEMPERATURE
120
Figure 32. 0 mm2 of PCB Copper, TA = 25°C
120
100
80
60
40
20
0
0.5
LOAD CURRENT
LOAD CURRENT
LOAD CURRENT
LOAD CURRENT
1.0
1.5
= 1mA
= 10mA
= 25mA
= 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
2.0
2.5
3.0
VIN – VOUT (V)
3.5
Figure 35. 0 mm2 of PCB Copper, TA = 50°C
Rev. D | Page 13 of 16
4.0
4.5
07874-026
120
JUNCTION TEMPERATURE, TJ (°C)
JUNCTION TEMPERATURE, TJ (°C)
MAX JUNCTION TEMPERATURE
ADP190/ADP191
In cases where the board temperature is known, use the thermal
characterization parameter, ΨJB, to estimate the junction temperature rise. Maximum junction temperature (TJ) is calculated
from the board temperature (TB) and power dissipation (PD)
using the formula
TJ = TB + (PD × ΨJB)
(4)
120
100
60
40
20
0
0.5
07874-028
80
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
MAX JUNCTION TEMPERATURE
1.0
1.5
2.0
2.5
3.0
VIN – VOUT (V)
Figure 37. ADP190 PCB Layout
3.5
4.0
4.5
07874-027
JUNCTION TEMPERATURE, TJ (°C)
140
Figure 36. TB = 85°C
PCB LAYOUT CONSIDERATIONS
It is critical to keep the input and output traces as wide and as
short as possible to minimize the circuit board trace resistance.
Rev. D | Page 14 of 16
07874-200
Improve heat dissipation from the package by increasing the
amount of copper attached to the pins of the ADP190/ADP191.
However, as listed in Table 6, a point of diminishing returns is
eventually reached, beyond which an increase in the copper size
does not yield significant heat dissipation benefits.
Figure 38. ADP191 PCB Layout
ADP190/ADP191
OUTLINE DIMENSIONS
0.660
0.600
0.540
0.430
0.400
0.370
0.800
0.760 SQ
0.720
SEATING
PLANE
2
1
A
0.280
0.260
0.240
BALL A1
IDENTIFIER
B
0.40
BALL PITCH
0.230
0.200
0.170
BOTTOM VIEW
(BALL SIDE UP)
0.050 NOM
COPLANARITY
011509-A
TOP VIEW
(BALL SIDE DOWN)
Figure 39. 4-Ball Wafer Level Chip Scale Package [WLCSP]
(CB-4-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
ADP190ACBZ-R7
ADP191ACBZ-R7
ADP190CB-EVALZ
ADP191CB-EVALZ
1
Temperature Range
−40°C to +85°C
−40°C to +85°C
Package Description
4-Ball Wafer Level Chip Scale Package [WLCSP]
4-Ball Wafer Level Chip Scale Package [WLCSP]
Evaluation Board
Evaluation Board
Z = RoHS Compliant Part.
Rev. D | Page 15 of 16
Package Option
CB-4-3
CB-4-3
Branding
4D
4G
ADP190/ADP191
NOTES
©2009-2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D07874-0-11/10(D)
Rev. D | Page 16 of 16