Ultralow Noise,200 mA,
CMOS Linear Regulator
ADP151
TYPICAL APPLICATION CIRCUIT
VIN = 2.3V
1
VIN
2
GND
3
EN
VOUT 5
VOUT = 1.8V
1µF
1µF
ON
NC 4
08627-001
Ultralow noise: 9 μV rms
No noise bypass capacitor required
Stable with 1 μF ceramic input and output capacitors
Maximum output current: 200 mA
Input voltage range: 2.2 V to 5.5 V
Low quiescent current
IGND = 10 μA with 0 load
IGND = 265 μA with 200 mA load
Low shutdown current: <1 μA
Low dropout voltage: 140 mV at 200 mA load
Initial accuracy: ±1%
Accuracy over line, load, and temperature: ±2.5%
16 fixed output voltage options: 1.1 V to 3.3 V
PSRR performance of 70 dB at 10 kHz
Current limit and thermal overload protection
Logic controlled enable
Internal pull-down resistor on EN input
5-lead TSOT package
4-ball, 0.4mm pitch WLCSP
OFF
NC = NO CONNECT
Figure 1. TSOT ADP151 with Fixed Output Voltage, 1.8 V
VIN = 2.3V
1
2
VIN
VOUT
VOUT = 1.8V
CIN
A
TOP VIEW
(Not to Scale)
ON
OFF
EN
GND
B
COUT
1µF
08627-002
FEATURES
Figure 2. WLCSP ADP151 with Fixed Output Voltage, 1.8 V
APPLICATIONS
RF, VCO, and PLL power supplies
Mobile phones
Digital camera and audio devices
Portable and battery-powered equipment
Post dc-to-dc regulation
Portable medical devices
GENERAL DESCRIPTION
The ADP151 is an ultralow noise, low dropout, linear regulator
that operates from 2.2 V to 5.5 V and provides up to 200 mA of
output current. The low 140 mV dropout voltage at 200 mA
load improves efficiency and allows operation over a wide input
voltage range.
Using an innovative circuit topology, the ADP151 achieves
ultralow noise performance without the necessity of a bypass
capacitor, making it ideal for noise-sensitive analog and RF
applications. The ADP151 also achieves ultralow noise performance without compromising PSRR or transient line and
load performance. The low 265 μA of quiescent current at
200 mA load makes the ADP151 suitable for battery-operated
portable equipment.
The ADP151 is specifically designed for stable operation with
tiny 1 μF, ±30% ceramic input and output capacitors to meet
the requirements of high performance, space constrained
applications.
The ADP151 is capable of 16 fixed output voltage options,
ranging from 1.1 V to 3.3 V.
Short-circuit and thermal overload protection circuits prevent
damage in adverse conditions. The ADP151 is available in tiny
5-lead TSOT and 4-ball, 0.4 mm pitch, halide-free WLCSP
packages for the smallest footprint solution to meet a variety of
portable power application requirements.
The ADP151 also includes an internal pull-down resistor on the
EN input.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2010 Analog Devices, Inc. All rights reserved.
ADP151
TABLE OF CONTENTS
Features .............................................................................................. 1
Typical Performance Characteristics ..............................................7
Applications ....................................................................................... 1
Theory of Operation ...................................................................... 11
Typical Application Circuit ............................................................. 1
Applications Information .............................................................. 12
General Description ......................................................................... 1
Capacitor Selection .................................................................... 12
Revision History ............................................................................... 2
Enable Feature ............................................................................ 13
Specifications..................................................................................... 3
Adjustable Output Voltage Operation ..................................... 13
Input and Output Capacitor, Recommended Specifications .. 4
Current Limit and Thermal Overload Protection ................. 15
Absolute Maximum Ratings ............................................................ 5
Thermal Considerations............................................................ 15
Thermal Data ................................................................................ 5
Printed Circuit Board Layout Considerations ............................ 19
Thermal Resistance ...................................................................... 5
Outline Dimensions ....................................................................... 20
ESD Caution .................................................................................. 5
Ordering Guide .......................................................................... 21
Pin Configurations and Function Descriptions ........................... 6
REVISION HISTORY
3/10—Revision 0: Initial Version
Rev. 0 | Page 2 of 24
ADP151
SPECIFICATIONS
VIN = (VOUT + 0.4 V) or 2.2 V, whichever is greater; EN= VIN, IOUT = 10 mA, CIN = COUT = 1 μF, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
INPUT VOLTAGE RANGE
OPERATING SUPPLY CURRENT
SHUTDOWN CURRENT
Symbol
VIN
IGND
IGND-SD
Conditions
TJ = −40°C to +125°C
IOUT = 0 μA
IOUT = 0 μA, TJ = −40°C to +125°C
IOUT = 100 μA
IOUT = 100 μA, TJ = −40°C to +125°C
IOUT = 10 mA
IOUT = 10 mA, TJ = −40°C to +125°C
IOUT = 200 mA
IOUT = 200 mA, TJ = −40°C to +125°C
EN = GND
EN = GND, TJ = −40°C to +125°C
Min
2.2
IOUT = 10 mA
TJ = −40°C to +125°C
VOUT < 1.8 V
100 μA < IOUT < 200 mA, VIN = (VOUT + 0.4 V) to 5.5 V
VOUT ≥1.8 V
100 μA < IOUT < 200 mA, VIN = (VOUT + 0.4 V) to 5.5 V
TJ = −40°C to +125°C
VOUT < 1.8 V
100 μA < IOUT < 200 mA, VIN = (VOUT + 0.4 V) to 5.5 V
VOUT ≥1.8 V
100 μA < IOUT < 200 mA, VIN = (VOUT + 0.4 V) to 5.5 V
Typ
Max
5.5
1.0
Unit
V
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
−1
+1
%
−3
+2
%
−2.5
+1.5
%
−2.5
+2
%
−2
+1.5
%
−0.05
+0.05
%/V
0.012
%/mA
%/mA
%/mA
10
20
20
40
60
90
265
350
0.2
OUTPUT VOLTAGE ACCURACY
TSOT
WLCSP
REGULATION
Line Regulation
Load Regulation (TSOT)1
Load Regulation (WLCSP)1
DROPOUT VOLTAGE2
TSOT
WLCSP
VOUT
VOUT
VOUT
∆VOUT/∆VIN
VIN = (VOUT + 0.4 V) to 5.5 V, TJ = −40°C to +125°C
∆VOUT/∆IOUT
VOUT < 1.8 V
IOUT = 100 μA to 200 mA
IOUT = 100 μA to 200 mA, TJ = −40°C to +125°C
VOUT ≥ 1.8 V
IOUT = 100 μA to 200 mA
IOUT = 100 μA to 200 mA, TJ = −40°C to +125°C
VOUT < 1.8 V
IOUT = 100 μA to 200 mA
IOUT = 100 μA to 200 mA, TJ = −40°C to +125°C
VOUT ≥1.8 V
IOUT = 100 μA to 200 mA
IOUT = 100 μA to 200 mA, TJ = −40°C to +125°C
IOUT = 10 mA
IOUT = 10 mA, TJ = −40°C to +125°C
IOUT = 200 mA
IOUT = 200 mA, TJ = −40°C to +125°C
IOUT = 200 mA
IOUT = 200 mA, TJ = −40°C to +125°C
∆VOUT/∆IOUT
VDROPOUT
Rev. 0 | Page 3 of 24
0.006
0.003
0.008
0.004
0.009
0.002
0.006
10
30
150
230
135
200
%/mA
%/mA
%/mA
%/mA
%/mA
%/mA
%/mA
mV
mV
mV
mV
mV
mV
ADP151
Parameter
START-UP TIME3
CURRENT LIMIT THRESHOLD4
UNDERVOLTAGE LOCKOUT
Input Voltage Rising
Input Voltage Falling
Hysteresis
THERMAL SHUTDOWN
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
EN INPUT
EN Input Logic High
EN Input Logic Low
EN Input Pull-Down Resistance
OUTPUT NOISE
POWER SUPPLY REJECTION RATIO
VIN = VOUT + 0.5 V
Symbol
TSTART-UP
ILIMIT
Conditions
VOUT = 3.3 V
TJ = −40°C to +125°C
TJ = −40°C to +125°C
UVLORISE
UVLOFALL
UVLOHYS
Min
220
Typ
180
300
Max
400
1.96
120
V
V
mV
150
15
°C
°C
1.28
TSSD
TSSD-HYS
TJ rising
VIH
VIL
REN
OUTNOISE
2.2 V ≤ VIN ≤ 5.5 V
2.2 V ≤ VIN ≤ 5.5 V
VIN = VEN = 5.5 V
10 Hz to 100 kHz, VIN = 5 V, VOUT = 3.3 V
10 Hz to 100 kHz, VIN = 5 V, VOUT = 2.5 V
10 Hz to 100 kHz, VIN = 5 V, VOUT = 1.1 V
Unit
µs
mA
1.2
2.6
9
9
9
V
V
MΩ
µV rms
µV rms
µV rms
70
55
70
55
70
55
dB
dB
dB
dB
dB
dB
0.4
PSRR
10 kHz, VIN = 3.8 V, VOUT = 3.3 V, IOUT = 10 mA
100 kHz, VIN = 3.8 V, VOUT = 3.3 V, IOUT = 10 mA
10 kHz, VIN = 4.3 V, VOUT = 3.3 V, IOUT = 10 mA
100 kHz, VIN = 4.3 V, VOUT = 3.3 V, IOUT = 10 mA
10 kHz, VIN = 2.2 V, VOUT = 1.1 V, IOUT = 10 mA
100 kHz, VIN = 2.2 V, VOUT = 1.1 V, IOUT = 10 mA
VIN = VOUT + 1 V
Based on an end-point calculation using 0.1 mA and 200 mA loads. See Figure 6 for typical load regulation performance for loads less than 1 mA.
Dropout voltage is defined as the input-to-output voltage differential when the input voltage is set to the nominal output voltage. This applies only for output
voltages above 2.2 V.
3
Start-up time is defined as the time between the rising edge of EN and VOUT being at 90% of its nominal value.
4
Current limit threshold is defined as the current at which the output voltage drops to 90% of the specified typical value. For example, the current limit for a 3.0 V
output voltage is defined as the current that causes the output voltage to drop to 90% of 3.0 V (that is, 2.7 V).
1
2
INPUT AND OUTPUT CAPACITOR, RECOMMENDED SPECIFICATIONS
Parameter
Minimum Input and Output
Capacitance1
Capacitor ESR
1
Symbol
CMIN
Conditions
TA = −40°C to +125°C
Min
0.7
RESR
TA = −40°C to +125°C
0.001
Typ
Max
Unit
µF
0.2
Ω
The minimum input and output capacitance should be greater than 0.7 μF over the full range of operating conditions. The full range of operating conditions in the
application must be considered during device selection to ensure that the minimum capacitance specification is met. X7R and X5R type capacitors are recommended;
Y5V and Z5U capacitors are not recommended for use with any LDO.
Rev. 0 | Page 4 of 24
ADP151
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
VIN to GND
VOUT to GND
EN to GND
Storage Temperature Range
Operating Junction Temperature Range
Operating Ambient Temperature Range
Soldering Conditions
Rating
−0.3 V to +6.5 V
−0.3 V to VIN
−0.3 V to +6.5V
−65°C to +150°C
−40°C to +125°C
−40°C to +125°C
JEDEC J-STD-020
Stresses above those listed under absolute maximum ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP151 can be damaged when the junction
temperature limits are exceeded. Monitoring ambient temperature
does not guarantee that TJ is within the specified temperature
limits. In applications with high power dissipation and poor
thermal resistance, the maximum ambient temperature may
have to be derated.
In applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (TJ) of
the device is dependent on the ambient temperature (TA), the
power dissipation of the device (PD), and the junction-to-ambient
thermal resistance of the package (θJA).
Maximum junction temperature (TJ) is calculated from the
ambient temperature (TA) and power dissipation (PD) using the
formula
specified values of θJA are based on a 4-layer, 4 in. × 3 in. circuit
board. See JESD51-7 and JESD51-9 for detailed information
on the board construction. For additional information, see the
AN-617 Application Note, MicroCSP™ Wafer Level Chip Scale
Package, available at www.analog.com.
ΨJB is the junction-to-board thermal characterization parameter
with units of °C/W. ΨJB of the package is based on modeling and
calculation using a 4-layer board. The JESD51-12, Guidelines for
Reporting and Using Electronic Package Thermal Information,
states that thermal characterization parameters are not the same
as thermal resistances. ΨJB measures the component power
flowing through multiple thermal paths rather than a single
path as in thermal resistance, θJB. Therefore, ΨJB thermal paths
include convection from the top of the package as well as
radiation from the package, factors that make ΨJB more useful
in real-world applications. Maximum junction temperature (TJ)
is calculated from the board temperature (TB) and power
dissipation (PD) using the formula
TJ = TB + (PD × ΨJB)
See JESD51-8 and JESD51-12 for more detailed information
about ΨJB.
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type
5-Lead TSOT
4-Ball, 0.4 mm Pitch WLCSP
ESD CAUTION
TJ = TA + (PD × θJA)
Junction-to-ambient thermal resistance (θJA) of the package is
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of JθA may vary, depending on
PCB material, layout, and environmental conditions. The
Rev. 0 | Page 5 of 24
θJA
170
260
ΨJB
43
58
Unit
°C/W
°C/W
ADP151
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
5
VOUT
A
ADP151
EN 3
VIN
VOUT
TOP VIEW
(Not to Scale)
TOP VIEW
(Not to Scale)
4
NC = NO CONNECT
NC
08627-003
GND 2
2
B
Figure 3. 5-Lead TSOT Pin Configuration
EN
GND
08627-004
VIN 1
1
Figure 4. 4-Ball WLCSP Pin Configuration
Table 4. Pin Function Descriptions
Pin No.
TSOT
WLCSP
1
A1
2
B2
3
B1
Mnemonic
VIN
GND
EN
4
5
NC
VOUT
N/A
A2
Description
Regulator Input Supply. Bypass VIN to GND with a 1 µF or greater capacitor.
Ground.
Enable Input. Drive EN high to turn on the regulator; drive EN low to turn off the regulator. For automatic
startup, connect EN to VIN.
No Connect. Not connected internally.
Regulated Output Voltage. Bypass VOUT to GND with a 1 µF or greater capacitor.
Rev. 0 | Page 6 of 24
ADP151
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 5 V, VOUT = 3.3 V, IOUT = 1 mA, CIN = COUT = 1 µF, TA = 25°C, unless otherwise noted.
3.35
300
3.29
LOAD = 10µA
LOAD = 100µA
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
3.27
3.25
–40
–5
25
85
125
JUNCTION TEMPERATURE (°C)
200
100
LOAD = 10µA
LOAD = 100µA
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
0
–40
–5
25
85
08627-008
GROUND CURRENT (µA)
3.31
08627-005
VOUT (V)
3.33
125
JUNCTION TEMPERATURE (°C)
Figure 5. Output Voltage vs. Junction Temperature
Figure 8. Ground Current vs. Junction Temperature
3.35
1k
GROUND CURRENT (µA)
VOUT (V)
3.33
3.31
3.29
100
0.1
1
10
100
10
0.01
08627-006
3.25
0.01
1000
ILOAD (mA)
0.1
1
10
100
08627-009
3.27
1000
ILOAD (mA)
Figure 6. Output Voltage vs. Load Current
Figure 9. Ground Current vs. Load Current
1k
3.35
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 10µA
LOAD = 100µA
LOAD = 1mA
3.29
3.27
3.25
3.6
LOAD = 10µA
LOAD = 100µA
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
VIN (V)
5.4
100
10
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
VIN (V)
Figure 7. Output Voltage vs. Input Voltage
Figure 10. Ground Current vs. Input Voltage
Rev. 0 | Page 7 of 24
5.4
08627-010
GROUND CURRENT (µA)
3.31
08627-007
VOUT (V)
3.33
ADP151
0.35
0.30
700
0.25
0.20
0.15
0.10
600
500
400
300
200
100
0.05
–25
0
25
50
75
100
0
3.10
08627-011
0
–50
125
TEMPERATURE (°C)
3.15
3.20
3.25
3.30
3.35
3.40
3.45
3.50
3.55
VIN (V)
Figure 11. Shutdown Current vs. Temperature at Various Input Voltages
Figure 14. Ground Current vs. Input Voltage (in Dropout)
120
0
–10
100
–20
200mA
100mA
10mA
1mA
100µA
–30
80
PSRR (dB)
DROPOUT (mA)
IOUT = 1mA
IOUT = 5mA
IOUT = 10mA
IOUT = 50mA
IOUT = 100mA
IOUT = 200mA
08627-014
SHUTDOWN CURRENT (µA)
0.40
800
VIN = 3.6V
VIN = 3.8V
VIN = 4.2V
VIN = 4.4V
VIN = 4.8V
VIN = 5.5V
GROUND CURRENT (µA)
0.45
60
–40
–50
–60
40
–70
–80
20
10
100
1000
ILOAD (mA)
–100
10
08627-012
1
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 12. Dropout Voltage vs. Load Current
08627-015
–90
0
Figure 15. Power Supply Rejection Ratio vs. Frequency, VOUT = 1.2 V
0
3.40
–10
3.35
–20
3.30
200mA
100mA
10mA
1mA
100µA
–30
PSRR (dB)
3.20
3.15
IOUT = 1mA
IOUT = 5mA
IOUT = 10mA
IOUT = 50mA
IOUT = 100mA
IOUT = 200mA
3.05
3.00
3.10
3.15
3.20
3.25
3.30
3.35
3.40
3.45
3.50
VIN (V)
3.55
–40
–50
–60
–70
–80
–90
–100
10
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 16. Power Supply Rejection Ratio vs. Frequency, VOUT = 2.8 V
Figure 13. Output Voltage vs. Input Voltage (in Dropout)
Rev. 0 | Page 8 of 24
08627-016
3.10
08627-013
VOUT (V)
3.25
ADP151
0
–10
–20
14
200mA
100mA
10mA
1mA
100µA
12
11
10
–30
9
NOISE (µV rms)
PSRR (dB)
3.3V
2.8V
1.2V
1.1V
13
–40
–50
–60
8
7
6
5
–70
4
–80
3
2
–90
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
0
0.001
0
–20
1
10
100
1k
Figure 20. Output Noise vs. Load Current and Output Voltage,
VIN = 5 V, COUT = 1 μF
1
IOUT = 200mA
IOUT = 10mA
IOUT = 200mA
IOUT = 10mA
IOUT = 200mA
IOUT = 10mA
–40
(nV/ Hz)
PSRR (dB)
–30
VOUT = 3.3V,
VOUT = 3.3V,
VOUT = 2.8V,
VOUT = 2.8V,
VOUT = 1.1V,
VOUT = 1.1V,
0.1
LOAD CURRENT (mA)
Figure 17. Power Supply Rejection Ratio vs. Frequency, VOUT = 3.3 V
–10
0.01
08627-020
1
08627-017
–100
10
–50
3.3V
2.8V
1.2V
1.1V
0.1
–60
–70
–80
1k
10k
100k
1M
10M
FREQUENCY (Hz)
–10
–20
IOUT
IOUT
IOUT
IOUT
100
1k
10k
100k
FREQUENCY (Hz)
Figure 21. Output Noise Spectrum, VIN = 5 V, ILOAD = 10 mA, COUT = 1 μF
Figure 18. Power Supply Rejection Ratio vs. Frequency at
Various Output Voltages and Load Currents
0
0.01
10
08627-018
100
08627-021
–90
–100
10
T
= 200mA, VIN = 3.3V
= 10mA, VIN =3.3V
= 200mA, VIN = 3.8V
= 10mA, VIN = 3.8V
LOAD CURRENT
1
PSRR (dB)
–30
–40
–50
–60
2
VOUT
–70
–80
100
1k
10k
100k
FREQUENCY (Hz)
1M
10M
Figure 19. Power Supply Rejection Ratio vs. Frequency at Various Voltages
and Load Currents, VOUT = 2.8 V
CH1 200mA
CH2 50mV
M20µs
T 10.00%
A CH1
64.0mA
08627-022
–100
10
08627-019
–90
Figure 22. Load Transient Response, CIN, COUT = 1 μF, ILOAD = 1 mA to 200 mA
Rev. 0 | Page 9 of 24
ADP151
T
T
INPUT VOLTAGE
INPUT VOLTAGE
2
2
VOUT
VOUT
CH1 1V
CH2 2mV
M10µs
T 10.80%
A CH1
4.56V
CH1 1V
Figure 23. Line Transient Response, CIN, COUT = 1 μF, ILOAD = 200 mA
CH2 2mV
M10µs
T 10.80%
A CH1
4.56V
08627-024
1
08627-023
1
Figure 24. Line Transient Response, CIN, COUT =1 μF, ILOAD = 1 mA
Rev. 0 | Page 10 of 24
ADP151
THEORY OF OPERATION
The ADP151 is an ultralow noise, low quiescent current, low
dropout linear regulator that operates from 2.2 V to 5.5 V and
can provide up to 200 mA of output current. Drawing a low
265 μA of quiescent current (typical) at full load makes the
ADP151 ideal for battery-operated portable equipment. Shutdown current consumption is typically 200 nA.
Using new innovative design techniques, the ADP151 provides
superior noise performance for noise-sensitive analog and RF
applications without the need for a noise bypass capacitor. The
ADP151 is also optimized for use with small 1 µF ceramic
capacitors.
VIN
VOUT
R1
SHUTDOWN
REN
REFERENCE
R2
08627-025
EN
An internal pull-down resistor on the EN input holds the input
low when the pin is left open.
The ADP151 is available in 16 output voltage options, ranging
from 1.1 V to 3.3 V. The ADP151 uses the EN pin to enable and
disable the VOUT pin under normal operating conditions.
When EN is high, VOUT turns on; when EN is low, VOUT
turns off. For automatic startup, EN can be tied to VIN.
SHORT CIRCUIT,
UVLO, AND
THERMAL
PROTECT
GND
Internally, the ADP151 consists of a reference, an error
amplifier, a feedback voltage divider, and a PMOS pass
transistor. Output current is delivered via the PMOS pass
device, which is controlled by the error amplifier. The error
amplifier compares the reference voltage with the feedback
voltage from the output and amplifies the difference. If the
feedback voltage is lower than the reference voltage, the gate of
the PMOS device is pulled lower, allowing more current to pass
and increasing the output voltage. If the feedback voltage is
higher than the reference voltage, the gate of the PMOS device
is pulled higher, allowing less current to pass and decreasing the
output voltage.
Figure 25. Internal Block Diagram
Rev. 0 | Page 11 of 24
ADP151
APPLICATIONS INFORMATION
Output Capacitor
The ADP151 is designed for operation with small, space-saving
ceramic capacitors but functions with most commonly used
capacitors as long as care is taken with regard to the effective series
resistance (ESR) value. The ESR of the output capacitor affects the
stability of the LDO control loop. A minimum of 1 µF capacitance
with an ESR of 1 Ω or less is recommended to ensure the stability
of the ADP151. Transient response to changes in load current is
also affected by output capacitance. Using a larger value of output
capacitance improves the transient response of the ADP151 to
large changes in load current. Figure 26 shows the transient
responses for an output capacitance value of 1 µF.
T
LOAD CURRENT
Figure 27 depicts the capacitance vs. voltage bias characteristic
of an 0402, 1 µF, 10 V, X5R capacitor. The voltage stability of a
capacitor is strongly influenced by the capacitor size and voltage
rating. In general, a capacitor in a larger package or higher voltage
rating exhibits better stability. The temperature variation of the
X5R dielectric is ~±15% over the −40°C to +85°C temperature
range and is not a function of package or voltage rating.
1.2
1.0
CAPACITANCE (µF)
CAPACITOR SELECTION
1
0.8
0.6
0.4
0
0
2
4
6
8
VOLTAGE
2
10
08627-027
0.2
Figure 27. Capacitance vs. Voltage Characteristic
VOUT
CH2 50mV
M20µs
T 10.00%
A CH1
64mA
08627-026
CH1 200mA
Use Equation 1 to determine the worst-case capacitance accounting
for capacitor variation over temperature, component tolerance,
and voltage.
CEFF = CBIAS × (1 − TEMPCO) × (1 − TOL)
Figure 26. Output Transient Response, COUT = 1 µF
Input Bypass Capacitor
(1)
where:
CBIAS is the effective capacitance at the operating voltage.
TEMPCO is the worst-case capacitor temperature coefficient.
TOL is the worst-case component tolerance.
Connecting a 1 µF capacitor from VIN to GND reduces the
circuit sensitivity to printed circuit board (PCB) layout,
especially when long input traces or high source impedance
are encountered. If greater than 1 µF of output capacitance is
required, the input capacitor should be increased to match it.
In this example, the worst-case temperature coefficient (TEMPCO)
over −40°C to +85°C is assumed to be 15% for an X5R dielectric.
The tolerance of the capacitor (TOL) is assumed to be 10%, and
CBIAS is 0.94 μF at 1.8 V, as shown in Figure 27.
Input and Output Capacitor Properties
Substituting these values in Equation 1 yields
Any good quality ceramic capacitors can be used with the
ADP151, as long as they meet the minimum capacitance and
maximum ESR requirements. Ceramic capacitors are manufactured with a variety of dielectrics, each with different behavior
over temperature and applied voltage. Capacitors must have a
dielectric adequate to ensure the minimum capacitance over the
necessary temperature range and dc bias conditions. X5R or
X7R dielectrics with a voltage rating of 6.3 V or 10 V are
recommended. Y5V and Z5U dielectrics are not recommended,
due to their poor temperature and dc bias characteristics.
CEFF = 0.94 μF × (1 − 0.15) × (1 − 0.1) = 0.719 μF
Therefore, the capacitor chosen in this example meets the
minimum capacitance requirement of the LDO over temperature and tolerance at the chosen output voltage.
To guarantee the performance of the ADP151, it is imperative
that the effects of dc bias, temperature, and tolerances on the
behavior of the capacitors be evaluated for each application.
Rev. 0 | Page 12 of 24
ADP151
ENABLE FEATURE
3.5
3.0
3.0
ENABLE VOLTAGE
The ADP151 uses the EN pin to enable and disable the VOUT
pin under normal operating conditions. As shown in Figure 28,
when a rising voltage on EN crosses the active threshold, VOUT
turns on. When a falling voltage on EN crosses the inactive
threshold, VOUT turns off.
2.5
2.0
1.5
1.0
ENABLE
3.3V
2.8V
1.1V
0.5
VOUT
2.0
0
0
1.5
50
100
150
200
250
300
350
400
450
TIME (µs)
08627-030
2.5
Figure 30. Typical Start-Up Behavior
1.0
ADJUSTABLE OUTPUT VOLTAGE OPERATION
0
0.5
1.0
1.5
2.0
2.5
ENABLE VOLTAGE
Figure 28. ADP151 Typical EN Pin Operation
As shown in Figure 28, the EN pin has hysteresis built in. This
prevents on/off oscillations that can occur due to noise on the
EN pin as it passes through the threshold points.
The EN pin active/inactive thresholds are derived from the VIN
voltage. Therefore, these thresholds vary with changing input
voltage. Figure 29 shows typical EN active/inactive thresholds
when the input voltage varies from 2.2 V to 5.5 V.
The unique architecture of the ADP151 makes an adjustable
version difficult to implement in silicon. However, it is possible
to create an adjustable regulator at the expense of increasing the
quiescent current of the regulator circuit.
The ADP151, and similar LDOs, are designed to regulate the
output voltage, VOUT, appearing at the VOUT pin with respect
to the GND pin. If the GND pin is at a potential other than 0 V
(for example, at VOFFSET), the ADP151 output voltage is VOUT +
VOFFSET. By taking advantage of this behavior, it is possible to
create an adjustable ADP151 circuit that retains most of the
desirable characteristics of the ADP151.
VIN
1
2
GND
3
EN
VOUT
C2
NC 4
VOFFSET
VEN RISE
800
VOUT 5
U1
1000
ENABLE VOLTAGE
VIN
C1
1200
R2
VEN FALL
R1
C3
VOUT = VLDO × (1 + R1/R2)
600
08627-131
0
08627-028
0.5
Figure 31. Adjustable LDO Using the ADP151
400
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
INPUT VOLTAGE
5.5
08627-029
200
Figure 29. Typical EN Pin Thresholds vs. Input Voltage
The ADP151 uses an internal soft start to limit the inrush current
when the output is enabled. The start-up time for the 3.3 V
option is approximately 160 μs from the time the EN active
threshold is crossed to when the output reaches 90% of its final
value. As shown in Figure 30, the start-up time is dependent on
the output voltage setting.
The circuit shown in Figure 31 is an example of an adjustable
LDO using the ADP151. A stable VOFFSET voltage is created by
passing a known current through R2. The current through R2 is
determined by the voltage across R1. Because the voltage across
R1 is set by the voltage between VOUT and GND, the current
passing through R2 is fixed, and VOFFSET is stable.
To minimize the effect variation of the ADP151 ground current,
IGND, with load, it is best to keep R1 as small as possible. It is also
best to size the current passing through R2 to at least 20×
greater than the maximum expected ground current.
To create a 4 V LDO circuit, start with the 3.3 V version of the
ADP151 to minimize the value of R2. Because VOUT is 4 V,
VOFFSET must be 0.7 V, and the current through R2 must be 7 mA.
R1 is, therefore, 3.3 V/7 mA or 471 Ω. A 470 Ω standard value
introduces less than 1% error. Capacitor C3 is necessary to stabilize
the LDO; a value of 1 μF is adequate.
Rev. 0 | Page 13 of 24
ADP151
Figure 32 through Figure 36 show the typical performance of the
4 V LDO circuit.
11
10
9
8
1
10
100
1k
LOAD CURRENT (mA)
08627-134
The PSRR of the 4 V circuit is as much as 10 dB poorer than the
3.3. V LDO with 500 mV of headroom because the ground current
of the LDO varies somewhat with input voltage. This, in turn,
modulates VOFFSET and reduces the PSRR of the regulator. By
increasing the headroom to 1 V, the PSRR performance is nearly
restored to the performance of the fixed output LDO.
NOISE (µV rms)
The noise performance of the 4 V LDO circuit is only about 1 μV
worse than the same LDO used at 3.3 V because the output noise of
the circuit is almost solely determined by the LDO and not the
external components. The small difference may be attributed to the
internally generated noise in the LDO ground current working
with R2. By keeping R2 small, this noise contribution can be
minimized.
Figure 34. 4 V Load Circuit, Typical RMS Output Noise, 10 Hz to 100 kHz
T
4.04
4.03
1
4.02
VOUT (V)
4.01
4.00
2
3.97
3.96
LOAD = 10mA
LOAD = 20mA
LOAD = 50mA
LOAD = 100mA
LOAD = 150mA
LOAD = 200mA
–40
CH1 100mA
–5
25
85
125
JUNCTION TEMPERATURE (°C)
08627-132
3.98
4.035
4.030
M40µs
T 10.20%
A CH1
52.0mA
Figure 35. 4 V Load Circuit, Typical PSRR vs. Load Current, 1 V Headroom
Figure 32. 4 V LDO Circuit, Typical Load Regulation over Temperature
4.040
CH2 50mV
08627-135
3.99
T
LOAD = 10mA
LOAD = 20mA
LOAD = 50mA
LOAD = 100mA
LOAD = 150mA
LOAD = 200mA
1
VOUT (V)
4.025
4.020
2
4.015
4.005
4.6
4.8
5.0
VIN (V)
5.2
5.4
08627-133
CH1 100mA
4.000
4.4
CH2 50mV
M40µs
T 10.20%
A CH1
52.0mA
08627-136
4.010
Figure 36. 4 V Load Circuit, Typical PSRR vs. Load Current, 500 mV Headroom
Figure 33. 4 V LDO Circuit, Typical Line Regulation over Load Current
Rev. 0 | Page 14 of 24
ADP151
CURRENT LIMIT AND THERMAL OVERLOAD
PROTECTION
The ADP151 is protected against damage due to excessive
power dissipation by current and thermal overload protection
circuits. The ADP151 is designed to current limit when the
output load reaches 300 mA (typical). When the output load
exceeds 300 mA, the output voltage is reduced to maintain a
constant current limit.
Thermal overload protection is included, which limits the
junction temperature to a maximum of 150°C (typical). Under
extreme conditions (that is, high ambient temperature and
power dissipation) when the junction temperature starts to rise
above 150°C, the output is turned off, reducing the output
current to 0. When the junction temperature drops below
135°C, the output is turned on again, and output current is
restored to its nominal value.
Consider the case where a hard short from VOUT to ground
occurs. At first, the ADP151 current limits, so that only 300 mA
is conducted into the short. If self-heating of the junction is
great enough to cause its temperature to rise above 150°C,
thermal shutdown activates, turning off the output and
reducing the output current to 0. As the junction temperature
cools and drops below 135°C, the output turns on and
conducts 300 mA into the short, again causing the junction
temperature to rise above 150°C. This thermal oscillation
between 135°C and 150°C causes a current oscillation between
300 mA and 0 mA that continues as long as the short remains
at the output.
Current and thermal limit protections are intended to protect
the device against accidental overload conditions. For reliable
operation, device power dissipation must be externally limited
so that junction temperatures do not exceed 125°C.
THERMAL CONSIDERATIONS
In most applications, the ADP151 does not dissipate much heat
due to its high efficiency. However, in applications with high
ambient temperature, high supply voltage to output voltage
differential, the heat dissipated in the package is large enough
that it can cause the junction temperature of the die to exceed
the maximum junction temperature of 125°C.
When the junction temperature exceeds 150°C, the converter
enters thermal shutdown. It recovers only after the junction
temperature has decreased below 135°C to prevent any permanent
damage. Therefore, thermal analysis for the chosen application
is very important to guarantee reliable performance over all
conditions. The junction temperature of the die is the sum of
the ambient temperature of the environment and the temperature rise of the package due to the power dissipation, as shown
in Equation 2.
changes. These parameters include ambient temperature, power
dissipation in the power device, and thermal resistances
between the junction and ambient air (θJA). The θJA number is
dependent on the package assembly compounds that are used
and the amount of copper used to solder the package GND pins
to the PCB.
Table 5 shows typical θJA values of the 5-lead TSOT package for
various PCB copper sizes. Table 6 shows the typical ΨJB values of
the 5-lead TSOT and 4-ball WLCSP.
Table 5. Typical θJA Values
Copper Size (mm2)
01
50
100
300
500
1
TSOT
170
152
146
134
131
θJA (°C/W)
WLCSP
260
159
157
153
151
Device soldered to minimum size pin traces.
Table 6. Typical ΨJB Values
Model
TSOT
WLCSP
ΨJB (°C/W)
43
58
The junction temperature of the ADP151 can be calculated
from the following equation:
TJ = TA + (PD × θJA)
(2)
where:
TA is the ambient temperature.
PD is the power dissipation in the die, given by
PD = [(VIN − VOUT) × ILOAD] + (VIN × IGND)
(3)
where:
ILOAD is the load current.
IGND is the ground current.
VIN and VOUT are input and output voltages, respectively.
Power dissipation due to ground current is quite small and can
be ignored. Therefore, the junction temperature equation
simplifies to the following:
TJ = TA + {[(VIN − VOUT) × ILOAD] × θJA}
(4)
As shown in Equation 4, for a given ambient temperature, inputto-output voltage differential, and continuous load current,
there exists a minimum copper size requirement for the PCB
to ensure that the junction temperature does not rise above 125°C.
Figure 37 to Figure 50 show junction temperature calculations
for different ambient temperatures, load currents, VIN-to-VOUT
differentials, and areas of PCB copper.
To guarantee reliable operation, the junction temperature of
the ADP151 must not exceed 125°C. To ensure that the junction
temperature stays below this maximum value, the user must be
aware of the parameters that contribute to junction temperature
Rev. 0 | Page 15 of 24
ADP151
140
140
MAXIMUM JUNCTION TEMPERATURE
100
80
60
40
20
0
0.3
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
0.8
1.3
1.8
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
4.8
120
100
80
60
40
20
0
0.3
Figure 37. WLCSP 500 mm2 of PCB Copper, TA = 25°C
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
0.8
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
4.8
140
MAXIMUM JUNCTION TEMPERATURE
MAXIMUM JUNCTION TEMPERATURE
100
80
60
40
20
0.8
1.3
1.8
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
4.8
100
80
60
40
20
0
0.3
Figure 38. WLCSP 100 mm2 of PCB Copper, TA = 25°C
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
0.8
1.8
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
4.8
Figure 41. WLCSP 100 mm2 of PCB Copper, TA = 50°C
140
140
MAXIMUM JUNCTION TEMPERATURE
MAXIMUM JUNCTION TEMPERATURE
JUNCTION TEMPERATURE, TJ (°C)
120
100
80
60
40
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
0.8
1.3
1.8
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
4.8
120
100
80
60
40
20
0
0.3
08627-033
20
0
0.3
1.3
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
Figure 39. WLCSP 50 mm2 of PCB Copper, TA = 25°C
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
0.8
1.3
1.8
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
Figure 42. WLCSP 50 mm2 of PCB Copper, TA = 50°C
Rev. 0 | Page 16 of 24
4.8
08627-036
0
0.3
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
120
08627-035
JUNCTION TEMPERATURE, TJ (°C)
120
08627-032
JUNCTION TEMPERATURE, TJ (°C)
1.8
Figure 40. WLCSP 500 mm2 of PCB Copper, TA = 50°C
140
JUNCTION TEMPERATURE, TJ (°C)
1.3
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
08627-034
JUNCTION TEMPERATURE, TJ (°C)
120
08627-031
JUNCTION TEMPERATURE, TJ (°C)
MAXIMUM JUNCTION TEMPERATURE
ADP151
140
140
MAXIMUM JUNCTION TEMPERATURE
100
80
60
40
20
0.8
1.3
1.8
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
4.8
100
80
60
40
20
0
0.3
Figure 43. TSOT 500 mm2 of PCB Copper, TA = 25°C
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
0.8
4.3
4.8
80
60
40
20
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
0.8
1.3
1.8
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
4.8
120
100
80
60
40
20
0
0.3
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
0.8
1.3
1.8
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
4.8
08627-041
JUNCTION TEMPERATURE, TJ (°C)
100
08627-038
JUNCTION TEMPERATURE, TJ (°C)
3.8
MAXIMUM JUNCTION TEMPERATURE
120
Figure 44. TSOT 100 mm2 of PCB Copper, TA = 25°C
Figure 47. TSOT 100 mm2 of PCB Copper, TA = 50°C
140
140
MAXIMUM JUNCTION TEMPERATURE
MAXIMUM JUNCTION TEMPERATURE
JUNCTION TEMPERATURE, TJ (°C)
120
100
80
60
40
20
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
0.8
1.3
1.8
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
4.8
120
100
80
60
40
20
0
0.3
08627-039
JUNCTION TEMPERATURE, TJ (°C)
2.3
2.8
3.3
VIN – VOUT (V)
140
MAXIMUM JUNCTION TEMPERATURE
0
0.3
1.8
Figure 46. TSOT 500 mm2 of PCB Copper, TA = 50°C
140
0
0.3
1.3
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
Figure 45. TSOT 50 mm2 of PCB Copper, TA = 25°C
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
0.8
1.3
1.8
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
Figure 48. TSOT 50 mm2 of PCB Copper, TA = 50°C
Rev. 0 | Page 17 of 24
4.8
08627-042
0
0.3
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
120
08627-040
JUNCTION TEMPERATURE, TJ (°C)
120
08627-037
JUNCTION TEMPERATURE, TJ (°C)
MAXIMUM JUNCTION TEMPERATURE
ADP151
In the case where the board temperature is known, use the
thermal characterization parameter, ΨJB, to estimate the
junction temperature rise (see Figure 49 and Figure 50).
Maximum junction temperature (TJ) is calculated from the
board temperature (TB) and power dissipation (PD) using the
following formula:
MAXIMUM JUNCTION TEMPERATURE
The typical value of ΨJB is 58°C/W for the 4-ball WLCSP package
and 43°C/W for the 5-lead TSOT package.
140
120
100
80
60
40
20
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
120
0
0.3
100
0.8
1.3
1.8
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
2.3
2.8
3.3
VIN – VOUT (V)
Figure 50. TSOT, TA = 85°C
80
60
40
20
0
0.3
ILOAD = 1mA
ILOAD = 10mA
ILOAD = 50mA
0.8
1.3
1.8
ILOAD = 100mA
ILOAD = 150mA
ILOAD = 200mA
2.3
2.8
3.3
VIN – VOUT (V)
3.8
4.3
4.8
08627-043
JUNCTION TEMPERATURE, TJ (°C)
MAXIMUM JUNCTION TEMPERATURE
Figure 49. WLCSP, TA = 85°C
Rev. 0 | Page 18 of 24
3.8
4.3
4.8
08627-044
(5)
JUNCTION TEMPERATURE, TJ (°C)
TJ = TB + (PD × ΨJB)
140
ADP151
PRINTED CIRCUIT BOARD LAYOUT CONSIDERATIONS
Heat dissipation from the package can be improved by increasing
the amount of copper attached to the pins of the ADP151.
However, as listed in Table 5, a point of diminishing returns is
eventually reached, beyond which an increase in the copper size
does not yield significant heat dissipation benefits.
08627-046
Place the input capacitor as close as possible to the VIN and
GND pins. Place the output capacitor as close as possible to the
VOUT and GND pins. Use of 0402 or 0603 size capacitors and
resistors achieves the smallest possible footprint solution on
boards where area is limited.
08627-045
Figure 52. Example WLCSP PCB Layout
Figure 51. Example TSOT PCB Layout
Rev. 0 | Page 19 of 24
ADP151
OUTLINE DIMENSIONS
2.90 BSC
5
4
2.80 BSC
1.60 BSC
1
2
3
0.95 BSC
1.90
BSC
*1.00 MAX
0.10 MAX
0.50
0.30
0.20
0.08
SEATING
PLANE
8°
4°
0°
0.60
0.45
0.30
100708-A
*0.90 MAX
0.70 MIN
*COMPLIANT TO JEDEC STANDARDS MO-193-AB WITH
THE EXCEPTION OF PACKAGE HEIGHT AND THICKNESS.
Figure 53. 5-Lead Thin Small Outline Transistor Package [TSOT]
(UJ-5)
Dimensions show in millimeters
0.660
0.600
0.540
SEATING
PLANE
2
1
A
0.280
0.260
0.240
BALL A1
IDENTIFIER
B
0.40
BALL PITCH
TOP VIEW
(BALL SIDE DOWN)
0.230
0.200
0.170
BOTTOM VIEW
(BALL SIDE UP)
0.050 NOM
COPLANARITY
Figure 54. 4-Ball Wafer Level Chip Scale Package [WLCSP]
(CB-4-3)
Dimensions show in millimeters
Rev. 0 | Page 20 of 24
011509-A
0.430
0.400
0.370
0.800
0.760 SQ
0.720
ADP151
ORDERING GUIDE
Model1
ADP151ACBZ-1.2-R7
ADP151ACBZ-1.5-R7
ADP151ACBZ-1.8-R7
ADP151ACBZ-2.5-R7
ADP151ACBZ-2.75-R7
ADP151ACBZ-2.8-R7
ADP151ACBZ-2.85-R7
ADP151ACBZ-3.0-R7
ADP151ACBZ-3.3-R7
ADP151ACBZ-2.1-R7
ADP151AUJZ-1.2-R7
ADP151AUJZ-1.5-R7
ADP151AUJZ-1.8-R7
ADP151AUJZ-2.5-R7
ADP151AUJZ-2.8-R7
ADP151AUJZ-3.0-R7
ADP151AUJZ-3.3-R7
Temperature
Range
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
Output
Voltage (V) 2
1.2
1.5
1.8
2.5
2.75
2.8
2.85
3.0
3.3
2.1
1.2
1.5
1.8
2.5
2.8
3.0
3.3
Package
Description
4-Ball WLCSP
4-Ball WLCSP
4-Ball WLCSP
4-Ball WLCSP
4-Ball WLCSP
4-Ball WLCSP
4-Ball WLCSP
4-Ball WLCSP
4-Ball WLCSP
4-Ball WLCSP
5-Lead TSOT
5-Lead TSOT
5-Lead TSOT
5-Lead TSOT
5-Lead TSOT
5-Lead TSOT
5-Lead TSOT
Z = RoHS Compliant Part.
For additional voltage options, contact a local Analog Devices, Inc., sales or distribution representative.
3
This package option is halide free.
1
2
Rev. 0 | Page 21 of 24
Package
Option
CB-4-33
CB-4-33
CB-4-33
CB-4-33
CB-4-33
CB-4-33
CB-4-33
CB-4-33
CB-4-33
CB-4-33
UJ-5
UJ-5
UJ-5
UJ-5
UJ-5
UJ-5
UJ-5
Branding
4R
4S
4T
4U
4V
4X
4Y
4Z
50
5E
LF6
LF7
LF8
LF9
LFG
LFH
LFJ
ADP151
NOTES
Rev. 0 | Page 22 of 24
ADP151
NOTES
Rev. 0 | Page 23 of 24
ADP151
NOTES
©2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D08627-0-3/10
Rev. 0 | Page 24 of 24