PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count VR = 1200V VF(typ.)* = 2.3V IF(AV) = 30A Qrr (typ.)= 120nC IRRM(typ.) = 4.7A trr(typ.) = 47ns di(rec)M/dt (typ.)* = 240A/µs TO-247AC (Modified) Description International Rectifier's HFA16PB120 is a state of the art center tap ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. Absolute Maximum Ratings Parameter VR Cathode-to-Anode Voltage IF @ TC = 100°C Continuous Forward Current IFSM Single Pulse Forward Current IFRM Maximum Repetitive Forward Current PD @TC = 25°C PD @TC = 100°C TJ TSTG * 125°C www.irf.com Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 1200 V 30 120 A 90 350 140 -55 to + 150 W °C 1 07/27/04 HFA30PB120 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol VBR Parameter Cathode Anode Breakdown Voltage Min. Typ. Max. Units 1200 ––– ––– V ––– 2.4 4.1 3.1 5.7 Conditions IR = 100µA IF = 30A VFM Max Forward Voltage ––– ––– 2.3 4.0 IRM Max Reverse Leakage Current ––– 1.3 40 ––– 1.1 4000 V IF = 60A See Fig. 1 µA VR = VR Rated IF = 30A, TJ = 125°C See Fig. 2 TJ = 125°C, VR = 0.8 x VR Rated CT Junction Capacitance ––– 50 75 pF VR = 200V LS Series Inductance ––– 8.0 ––– nH Measured lead to lead 5mm from See Fig. 3 package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. trr Symbol Reverse Recovery Time Parameter ––– 47 ––– trr1 See Fig. 5, 10 ––– 110 170 ––– 170 260 Peak Recovery Current ––– 10 15 IRRM2 See Fig. 6 ––– 16 24 Qrr1 Reverse Recovery Charge ––– 650 980 Qrr2 See Fig. 7 ––– 1540 2310 ns TJ = 25°C A TJ = 25°C nC TJ = 25°C TJ = 125°C IF = 30A TJ = 125°C di(rec)M/dt1 Peak Rate of Fall of Recovery Current ––– 270 ––– di(rec)M/dt1 During tb ––– 240 ––– See Fig. 8 Conditions IF=1.0A, diF/dt=200A/µs, VR = 30V IRRM1 trr2 Units VR = 200V TJ = 125°C A/µs TJ = 25°C diF/dt =200A/µs TJ = 125°C Thermal - Mechanical Characteristics d Parameter Min. Typ. Max. Units °C Lead Temperature ––– ––– 300 RqJC Thermal Resistance, Junction-to-Case ––– ––– 0.36 RqJA Thermal Resistance, Junction-to-Ambient ––– ––– 80 °C/W Rqcs Thermal Resistance, Case-to-Heat Sink ––– 0.50 Weight ––– 2.0 (0.07) ––– g (oz.) Mounting Torque 6.0 ––– 12 kg-cm 5.0 ––– 10 lbf in Tlead e f Wt x Notes: L=100µH, duty cycle limited by max T J 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased 2 www.irf.com HFA30PB120 10 Reverse Current - I R (µA) IF, Instantaneous Forward Current (A) 1000 100 T J = 150°C T J = 125°C 1 T J = 25°C 0.1 200 400 600 800 1000 1200 Reverse Voltage - V R (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage 1000 Junction Capacitance - CT (pF) 10 25°C 125°C 150°C 1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VF, Forward Voltage Drop (V) 100 TJ = 25°C 10 1 Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 10 100 1000 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 τJ 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 τC τ τ3 Ri (°C/W) τi (sec) 0.234 0.000100 0.069 0.000434 0.056 Ci= τi/Ri Ci i/Ri 0.002202 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) www.irf.com Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics 3 HFA30PB120 35 300 VR = 390V T J = 25°C _____ 275 IF = 60A IF = 30A T J = 125°C ---------- 250 V = 390V R T = 25°C _____ J T = 125°C ---------J 30 IF = 15A 225 IF = 60A IF = 30A IF = 15A 25 200 trr (ns) IRRM (A) 175 150 125 20 15 100 10 75 50 5 25 0 0 100 150 200 250 300 350 400 450 500 100 150 200 250 300 350 400 450 500 diF /dt (A/µs) diF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg) Fig. 5 - Typical Reverse Recovery vs. dif/dt, (per Leg) 3000 900 VR = 390V T J = 25°C _____ 2500 T J = 125°C ---------- IF = 60A 800 IF = 30A IF = 15A 700 di(rec)M / dt (A/µs) 2000 Qrr (nC) V = 390V R T = 25°C _____ J TJ = 125°C ---------- 1500 1000 600 IF15A 500 400 IF 300 200 IF = 30A = 60A 500 100 0 0 100 200 300 400 500 diF /dt (A/µs) Fig. 7 - Typical Stored Charge vs. dif/dt, (per Leg) 4 100 150 200 250 300 350 400 450 500 diF /dt (A/µs) Fig. 8 - Typical di(rec)M/dt vs. dif/dt, (per Leg) www.irf.com HFA30PB120 3 t rr IF 0 REVERSE RECOVERY CIRCUIT tb ta VR = 200V 2 Q rr I RRM 4 0.5 I RRM di(rec)M/dt 0.01 Ω 0.75 I RRM L = 70µH 1 D.U.T. dif/dt ADJUST IRFP250 4. Qrr - Area under curve defined by trr and I RRM trr X IRRM Q rr = 2 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current S Fig. 9 - Reverse Recovery Parameter Test Circuit L = 100µH 5. di(rec)M/dt - Peak rate of change of current during t b portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions I L(PK) HIGH-SPEED SWITCH DUT Rg = 25 ohm CURRENT MONITOR di f /dt 1. dif/dt - Rate of change of current through zero crossing D G 5 FREE-WHEEL DIODE + DECAY TIME Vd = 50V V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms www.irf.com 5 HFA30PB120 TO-247AC (Modified) Package Outline Drawing Dimensions are in millimeters (inches) Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 6 www.irf.com