PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features (K) Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC (N/C) Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count 1 - di(rec)M/dt * = 280A/µs * 125°C 3 _- (A) Description International Rectifier's HFA04TB60S is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 8 amps per Leg continuous current, the HFA04TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA04TB60S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. D2 Pak Absolute Maximum Ratings Parameter VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG www.irf.com Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 600 4.0 25 16 25 10 V -55 to +150 °C A W 1 10/07/05 HFA04TB60SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units VBR Cathode Anode Breakdown Voltage 600 1.5 1.8 1.4 0.17 44 4.0 1.8 2.2 1.7 3.0 300 8.0 VFM Max Forward Voltage IRM Max Reverse Leakage Current CT Junction Capacitance LS Series Inductance 8.0 V V µA pF nH Test Conditions IR = 100µA IF = 4.0A See Fig. 1 IF = 8.0A IF = 4.0A, T J = 125°C See Fig. 2 VR = VR Rated TJ = 125°C, VR = 0.8 x VR RatedD Rated See Fig. 3 VR = 200V Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter t rr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time See Fig. 5 & 6 Peak Recovery Current Reverse Recovery Charge See Fig. 7 Peak Rate of Fall of Recovery Current During tb See Fig. 8 Min. Typ. Max. Units 17 28 38 2.9 3.7 40 70 280 235 42 57 5.2 6.7 60 105 ns A nC A/µs Test Conditions IF = 1.0A, dif/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C IF = 4.0A TJ = 25°C TJ = 125°C V R = 200V TJ = 25°C TJ = 125°C dif/dt = 200A/µs TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameter Tlead RthJC RthJA Wt Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Weight Min. Typ. Max. Units 2.0 0.07 300 5.0 80 °C K/W g (oz) 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount 2 www.irf.com HFA04TB60SPbF 1000 Reverse Current - IR (µA) TJ = 150°C 10 TJ = 125°C T = 25°C TJ = 150°C 100 10 TJ = 125°C 1 0.1 TJ = 25°C 0.01 0.001 J 0 100 200 300 400 500 Reverse Voltage - V R (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage 1 100 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current, Junction Capacitance -CT (pF) Instantaneous Forward Current - IF (A) 100 A TJ = 25°C 10 1 1 10 100 1000 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.1 0.01 0.00001 t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFA04TB60SPbF 50 14 I F = 8.0A 45 12 I F = 4.0A VR = 200V TJ = 125°C TJ = 25°C I F = 8.0A 10 I F = 4.0A Irr- ( A) trr- (nC) 40 35 8 6 30 4 25 2 VR = 200V TJ = 125°C TJ = 25°C 20 100 di f /dt - (A/µs) 0 100 1000 1000 di f /dt - (A/µs) Fig. 6 - Typical Recovery Current vs. dif/dt Fig. 5 - Typical Reverse Recovery vs. dif/dt 1000 200 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 160 I F = 8.0A I F = 4.0A Qrr- (nC) 120 di (rec) M/dt- (A /µs) I F = 8.0A 80 I F = 4.0A 40 0 100 di f /dt - (A/µs) Fig. 7 - Typical Stored Charge vs. dif/dt 4 1000 100 100 A 1000 di f /dt - (A/µs) Fig. 8 - Typical di(rec)M/dt vs. dif/dt, www.irf.com HFA04TB60SPbF 3 t rr IF REVERSE RECOVERY CIRCUIT tb ta 0 Q rr VR = 200V 2 I RRM 4 0.5 I RRM di(rec)M/dt 0.01 Ω 0.75 I RRM L = 70µH D.U.T. dif/dt ADJUST D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit www.irf.com 5 1 di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and I RRM trr X IRRM Q rr = 2 5. di(rec)M/dt - Peak rate of change of current during t b portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions 5 HFA04TB60SPbF D2PAK Package Outline Dimensions are shown in millimeters (inches) D2PAK Part Marking Information T HIS IS A HFA04T B60S INT ERNATIONAL RECT IF IER LOGO (K) ASS EMBLY LOT CODE (N/C) (A) 6 PART NUMBER DAT E CODE YY = YEAR WW = WEEK P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) www.irf.com HFA04TB60SPbF D2PAK Tape & Reel Information Dimensions are shown in millimeters (inches) Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/05 www.irf.com 7