IRF IRL3103D2PBF

PD-95435
IRL3103D2PbF
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l
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Copackaged HEXFET® Power MOSFET
and Schottky Diode
Generation 5 Technology
Logic Level Gate Drive
Minimize Circuit Inductance
Ideal For Synchronous Regulator Application
Lead-Free
D
VDSS = 30V
RDS(on) = 0.014Ω
G
ID = 54A
S
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
54
34
220
2.0
70
0.56
± 16
-55 to + 150
A
W
W
W/°C
V
300 (1.6mm from case )
10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
1.8
62
°C/W
06/22/04
IRL3103D2PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
–––
–––
–––
1.0
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.037
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.0
210
20
54
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
–––
–––
–––
–––
2300
1100
310
3500
V(BR)DSS
IGSS
Max. Units
Conditions
–––
V
V GS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mAƒ
0.014
V GS = 10V, ID = 32A ‚
Ω
0.019
V GS = 4.5V, ID = 27A ‚
–––
V
V DS = V GS, ID = 250µA
–––
S
V DS = 25V, ID = 34Aƒ
0.25
V DS = 30V, VGS = 0V
mA
35
V DS = 24V, VGS = 0V, TJ = 125°C
100
V GS = 16V
nA
-100
V GS = -16V
44
I D = 32A
14
nC V DS = 24V
24
V GS = 4.5V, See Fig. 6 ‚
–––
V DD = 15V
–––
ID = 34A
ns
–––
R G = 3.4Ω, V GS =4.5V
–––
R D = 0.43 Ω, ‚ƒ
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
V GS = 0V
–––
V DS = 25V
pF
–––
ƒ = 1.0MHz, See Fig. 5
–––
V GS = 0V, VDS = 0V
D
S
Body Diode & Schottky Diode Ratings and Characteristics
Parameter
IF (AV)
( Schottky)
ISM
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
VSD1
VSD2
trr
Qrr
ton
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ Uses IRL3103 data and test conditions
Min. Typ. Max. Units
Conditions
MOSFET symbol
5.0
––– –––
showing the
A
integral reverse
––– ––– 220
p-n junction and Schottky diode.
––– ––– 1.3
V
TJ = 25°C, IS = 32A, VGS = 0V ‚
––– ––– 0.6
V
TJ = 25°C, IS = 3.0A, VGS = 0V ‚
––– 51
77
ns
TJ = 25°C, IF = 32A
––– 47
71
nC di/dt = 100A/µs ‚
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
IRL3103D2PbF
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
100
10
2.5V
20µs PULSE WIDTH
T J = 25°C
1
0.1
1
10
100
10
2.5V
20µs PULSE WIDTH
TJ = 150°C
1
0.1
A
100
1
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
30
IS, Source-to-Drain Current ( A )
IS, Source-to-Drain Current ( A )
30
20
VGS
10V
8.0V
6.0V
4.0V
2.0V
BOTTOM 0.0V
TOP
0.0V
0
0.0
20µs PULSE WIDTH
TC = 25°C
0.2
0.4
0.6
0.8
A
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
10
1.0
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Reverse Output Characteristics
A
VGS
10V
8.0V
6.0V
4.0V
2.0V
BOTTOM 0.0V
TOP
20
0.0V
10
0
0.0
20µs PULSE WIDTH
TC = 150°C
0.2
0.4
0.6
0.8
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Reverse Output Characteristics
A
IRL3103D2PbF
15
V GS = 0V,
f = 1MHz
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4000
3000
VGS , Gate-to-Source Voltage (V)
C, Capacitance ( pF )
5000
Ciss
Coss
2000
1000
Crss
0
10
VDS = 24V
VDS = 15V
12
9
6
3
0
A
1
ID = 32A
0
100
20
60
80
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
60
I D , Drain-to-Source Current (A)
50
ID , Drain Current (A)
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
40
30
20
10
0
TJ = 25°C
100
TJ = 150°C
10
VDS = 15V
20µs PULSE WIDTH
1
25
50
75
100
125
TC , Case Temperature ( ° C)
Fig 7. Maximum Drain Current Vs.
Case Temperature
150
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 8. Typical Transfer Characteristics
A
9.0
IRL3103D2PbF
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 54A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 9. Normalized On-Resistance
Vs. Temperature
Thermal Response (ZthJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/t
1
t2
2
2. Peak TJ = P DM x Z thJC + T C
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
IRL3103D2PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
3
4- DRAIN
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
3- EMITTER
4 - DRAIN
HEXFET
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E X AMP L E : T H IS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT ION AL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
P AR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/