IRF IRF5806PBF

PD - 95476B
IRF5806PbF
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HEXFET® Power MOSFET
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
VDSS
RDS(on) max
ID
-20V
86mΩ@VGS = -4.5V
147mΩ@VGS = -2.5V
-4.0A
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
-3.0A
A
D
D
1
6
D
2
5
D
G
3
4
S
Top View
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-4.0
-3.3
-16.5
2.0
1.3
0.02
± 20
-55 to + 150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
Max.
Units
62.5
°C/W
1
04/20/10
IRF5806PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.45
6.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.011
47.1
67.5
–––
–––
–––
–––
–––
–––
8.3
1.2
2.6
6.2
27
94
126
594
114
87
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
86
VGS = -4.5V, ID = -4.0A ‚
mΩ
147
VGS = -2.5V, ID = -3.0A ‚
-1.2
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -4.0A
-15
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
11.4
ID = -4.0A
–––
nC
VDS = -16V
–––
VGS = -4.5V
9.3
VDD = -10V, VGS = -4.5V
41
ID = -1.0A
ns
140
RG = 6.0Ω
190
RD = 10Ω ‚
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.0
–––
–––
-16.5
–––
–––
–––
–––
116
90
-1.2
174
135
A
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V ‚
TJ = 25°C, IF = -2.0A
di/dt = -100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ When mounted on 1 inch square Copper board, t ≤ 10sec.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF5806PbF
100
100
VGS
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
BOTTOM -1.5V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
-1.50V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
-1.50V
1
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
10
TJ = 150 ° C
V DS = -15V
20µs PULSE WIDTH
2.5
3.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
2.0
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.5
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
1
1.0
VGS
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
BOTTOM -1.5V
TOP
TOP
ID = -4.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5806PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
800
Ciss
600
400
Coss
Crss
200
0
1
10
10
-VGS , Gate-to-Source Voltage (V)
1000
6
4
2
0
100
0
4
8
12
16
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
VDS =-16V
8
-VDS , Drain-to-Source Voltage (V)
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
V GS = 0 V
0.6
10us
10
100us
1ms
1
10ms
1.0
-VSD ,Source-to-Drain Voltage (V)
4
ID = -4.0A
Fig 7. Typical Source-Drain Diode
Forward Voltage
1.4
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5806PbF
5.0
RD
VDS
V GS
-ID , Drain Current (A)
4.0
D.U.T.
RG
-
+
V DD
3.0
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
150
10%
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.1
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.20
0.15
0.10
ID = -4.0A
0.05
0.00
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
RDS(on) , Drain-to -Source On Resistance (Ω)
IRF5806PbF
0.20
0.16
VGS = -2.5V
0.12
0.08
VGS = -4.5V
0.04
0.00
0
5
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
10
15
20
-I D , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
10 V
QGS
QGD
12V
.2µF
.3µF
D.U.T.
+VDS
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF5806PbF
0.8
100
80
0.6
Power (W)
-VGS(th) ( V )
0.7
ID = -250µA
0.5
60
40
0.4
20
0.3
0.2
0
-75
-50
-25
0
25
50
75
100
T J , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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125
150
0.0001
0.0010
0.0100
0.1000
1.0000
10.0000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF5806PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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8
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRF5806PbF
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2010
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9