IRF IRF5800

PD - 93850
IRF5800
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
D
A
D
1
6
2
5
3
4
VDSS = -30V
D
G
D
S
RDS(on) = 0.085Ω
T o p V ie w
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-30
-4.0
-3.2
-32
2.0
1.3
0.016
20.6
± 20
-55 to + 150
V
W/°C
mJ
V
°C
Max.
Units
62.5
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
2/8/00
IRF5800
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
–––
–––
–––
–––
–––
–––
–––
–––
11.4
2.3
2.2
11.4
11
24
14
535
94
68
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = 1mA
0.085
VGS = -10V, ID = -4.0A ‚
Ω
0.150
VGS = -4.5V, ID = -3.0A ‚
–––
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -4.0A
-1.0
VDS = -24V, VGS = 0V
µA
-5.0
VDS = -24V, VGS = 0V, T J = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
17
ID = -4.0A
–––
nC
VDS = -16V
–––
VGS = -10V ‚
17
VDD = -15V, VGS = -10V
17
ID = -1.0A
ns
36
RG = 6.0Ω
20
RD = 15Ω, ‚
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.0
–––
–––
-32
–––
–––
–––
–––
19
16
-1.2
28
24
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, I F = -2.0A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
„ Starting TJ = 25°C, L = 2.5mH
RG = 25Ω, I AS = -4.0A. (See Fig 10 )
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IRF5800
100
100
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
10
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
1
-2.70V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
10
1
-2.70V
0.1
0.01
0.1
Fig 1. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
1
V DS = -15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
0.1
2.0
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
10
20µs PULSE WIDTH
TJ = 150 ° C
8.0
ID = -4.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5800
800
-VGS , Gate-to-Source Voltage (V)
600
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
400
200
Coss
Crss
0
1
10
ID = -4.0A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
-VDS , Drain-to-Source Voltage (V)
8
12
16
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
4
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.8
1.2
1.6
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS =-16V
100
10us
10
100us
1ms
1
0.1
2.0
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5800
4.0
EAS , Single Pulse Avalanche Energy (mJ)
50
-I D , Drain Current (A)
3.0
2.0
1.0
0.0
25
50
75
100
TC , Case Temperature
125
150
ID
-1.8A
-2.5A
BOTTOM -4.0A
TOP
40
30
20
10
0
25
( °C)
50
75
100
125
150
Starting T J, Junction Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.20
R DS (on) , Drain-to-Source On Resistance ( Ω)
R DS(on) , Drain-to -Source On Resistance ( Ω )
IRF5800
0.16
0.12
ID = -4.0A
0.08
0.04
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
6
16.0
0.25
0.20
VGS = -4.5V
0.15
0.10
0.05
VGS = -10V
0.00
0
5
10
15
20
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
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IRF5800
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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7
IRF5800
TSOP-6 Tape & Reel Information
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 2/2000
8
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