IRF IRF5806

PD - 93997
IRF5806
HEXFET® Power MOSFET
●
●
●
●
Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Available in Tape & Reel
VDSS
RDS(on) max
ID
-20V
86mΩ@VGS = -4.5V
147mΩ@VGS = -2.5V
-4.0A
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
D
D
G
1
6
2
5
3
4
-3.0A
A
D
D
S
Micro6

T o p V ie w
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-4.0
-3.3
-16.5
2.0
1.3
0.02
± 20
-55 to + 150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
Max.
Units
62.5
°C/W
1
10/04/00
IRF5806
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.45
6.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.011
47.1
67.5
–––
–––
–––
–––
–––
–––
8.3
1.2
2.6
6.2
27
94
126
594
114
87
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
86
VGS = -4.5V, ID = -4.0A ‚
mΩ
147
VGS = -2.5V, ID = -3.0A ‚
-1.2
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -4.0A
-15
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
11.4
ID = -4.0A
–––
nC
VDS = -16V
–––
VGS = -4.5V
9.3
VDD = -10V, VGS = -4.5V
41
ID = -1.0A
ns
140
RG = 6.0Ω
190
RD = 10Ω ‚
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.0
–––
–––
-16.5
–––
–––
–––
–––
116
90
-1.2
174
135
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V ‚
TJ = 25°C, I F = -2.0A
di/dt = -100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
ƒ When mounted on 1 inch square Copper board, t ≤ 10sec.
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF5806
100
100
VGS
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
BOTTOM -1.5V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
-1.50V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
-1.50V
1
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
10
TJ = 150 ° C
V DS = -15V
20µs PULSE WIDTH
2.5
3.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
2.0
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.5
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
1
1.0
VGS
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
BOTTOM -1.5V
TOP
TOP
ID = -4.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5806
VGS
Ciss
Crss
Coss
C, Capacitance (pF)
800
= 0V,
f = 1MHz
= Cgs + Cgd , Cds SHORTED
= Cgd
= Cds + Cgd
Ciss
600
400
200
Coss
Crss
10
-VGS , Gate-to-Source Voltage (V)
1000
10
VDS = -16V
8
6
4
2
0
1
ID = -4.0A
0
100
0
-VDS , Drain-to-Source Voltage (V)
4
8
12
16
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 150 ° C
1
100us
1ms
1
TJ = 25 ° C
0.1
0.2
10ms
V GS = 0 V
0.6
1.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10us
10
1.4
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5806
5.0
RD
VDS
VGS
-ID , Drain Current (A)
4.0
D.U.T.
RG
+
VDD
3.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
td(on)
tr
t d(off)
tf
VGS
10%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
P DM
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.1
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
R DS ( on ) , Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to -Source On Resistance ( Ω )
IRF5806
0.20
0.15
0.10
ID = -4.0A
0.05
0.00
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
0.20
0.16
VGS = -2.5V
0.12
0.08
VGS = -4.5V
0.04
0.00
0
5
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
10
15
20
-I D , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
D.U.T.
QGS
+VDS
QGD
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF5806
Package Outline
Micro6

3 .0 0 (.1 1 8 )
2 .8 0 (.1 1 1 )
1 .7 5 (.0 6 8 )
1 .5 0 (.0 6 0 )
6
-A -
1
LE AD A SS IG N MEN T S
R EC O MME N D E D FO O T PR IN T
-B -
5
4
2
3
6X
2X
0 .1 5
D
6
5
4
1
2
3
D
D
G
2 X 0. 9 5 (.0 3 7 5 )
S
6 X (1 .06 (.0 4 2 )
3 .00 (.1 1 8 )
2 .60 (.1 0 3 )
0.9 5 ( .0 3 7 5 )
D
2 .20 (.0 8 7 )
0 .5 0 (.0 19 )
0 .3 5 (.0 14 )
6 X 0 .6 5 (. 02 5 )
(.0 06 ) M C A S B S
O
O
0 -1 0
1 .30 (.0 5 1 )
0 .90 (.0 3 6 )
6X
1 .45 (.0 5 7 )
0 .90 (.0 3 6 )
-C -
0 .1 0 (.0 0 4 )
6 SU R F A C E S
0 .1 5 (.0 0 6 )
M A X.
0 .2 0 (.0 0 7 )
0 .0 9 (.0 0 4 )
0 .6 0 (.0 2 3 )
0 .1 0 (.0 0 4 )
NO TES :
1 . D IM E NS IO N IN G & T O L E R A N C IN G P E R A NS I Y 1 4 .5 M -1 98 2 .
2 . C O NT R O L L IN G D IM E NS IO N : M IL L IM E T E R .
3 . D IM E NS IO N S A R E S HO W N IN M IL L IM E T E R S (IN C H E S ).
Part Marking Information
Micro6

E X A M P L E : T H IS IS A N IR L M S 6 7 0 2
DATE
CODE
PA RT N U MBE R
TOP
W AFE R LO T
NUMBER CO DE
B OT TO M
P A R T N U M B E R E X AM P L E S :
2 A = IR L M S 1 9 0 2
2 B = IR L M S 1 5 0 3
2 C = IR L M S 6 7 0 2
2 D = IR L M S 5 7 0 3
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D ATE C O DE EXA M PLES:
YW W = 9 6 03 = 6 C
YW W = 9 6 32 = F F
YEAR
Y
2 001
2 002
2 003
2 004
2 005
1 996
1 997
1 998
1 999
2 000
1
2
3
4
5
6
7
8
9
0
WORK
W EEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
Y EA R
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
W O RK
W E EK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
W O R K W E EK = (1 -2 6 ) IF P R E C E D ED B Y L AS T D IG IT O F C A LE N D E R Y EA R
W O R K W E E K = ( 2 7 -5 2 ) IF P R E C E D E D B Y A L E T T E R
7
IRF5806
Tape & Reel Information
Micro6

8mm
4mm
F E E D D IR E C T IO N
N O TE S :
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
17 8.00
( 7 .0 08 )
MAX.
9.9 0 ( .39 0 )
8.4 0 ( .33 1 )
NO TES:
1. C O N T R O L LIN G D IM E N S IO N : M ILLIM ET E R .
2. O U T L IN E C O N F O R M S TO E IA -4 81 & E IA -541 .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice.10/00
8
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