IRF IRLMS6802PBF

PD- 94897
IRLMS6802PbF
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
A
D
D
1
6
D
2
5
D
G
3
4
S
VDSS = -20V
RDS(on) = 0.050Ω
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6™ package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. The unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Micro6ä
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-5.6
-4.5
-45
2.0
1.3
0.016
31
± 12
-55 to + 150
V
W/°C
mJ
V
°C
Max.
Units
62.5
°C/W
A
W
Thermal Resistance
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambientƒ
1
1/18/05
IRLMS6802PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.60
1.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.005 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.050
VGS = -4.5V, ID = -5.1A ‚
Ω
––– 0.100
VGS = -2.5V, ID = -3.4A ‚
––– -1.2
V
VDS = VGS, ID = -250µA
––– –––
S
VDS = -10V, ID = -0.80A
––– -1.0
VDS = -16V, VGS = 0V
µA
––– -25
VDS = -16V, VGS = 0V, TJ = 125°C
––– -100
VGS = -12V
nA
––– 100
VGS = 12V
11
16
ID = -4.5A
2.2 3.3
nC
VDS = -10V
2.9 4.3
VGS = -5.0V ‚
12 –––
VDD = -10V
33 –––
ID = -1.0A
ns
70 –––
R G = 6.0Ω
72 –––
R D = 10Ω ‚
1079 –––
VGS = 0V
220 –––
pF
VDS = -10V
152 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.0
–––
–––
-45
–––
–––
–––
–––
74
45
-1.2
110
67
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.6A, VGS = 0V
TJ = 25°C, IF = -3.0A
di/dt = -100A/µs ‚
D
S
ƒ
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Starting TJ = 25°C, L = 6.8mH
max. junction temperature. ( See fig. 11 )
2
RG = 25Ω, IAS = -3.0A. (See Figure 12)
www.irf.com
IRLMS6802PbF
100
100
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
10
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
1
-1.50V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
-1.50V
1
0.1
0.1
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
100
TJ = 25 ° C
TJ = 150 ° C
10
V DS = -15V
20µs PULSE WIDTH
2.0
3.0
4.0
Fig 3. Typical Transfer Characteristics
www.irf.com
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
-VGS , Gate-to-Source Voltage (V)
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1
1.0
20µs PULSE WIDTH
TJ = 150 ° C
5.0
ID = -5.6A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLMS6802PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1200
Ciss
800
400
Coss
Crss
0
1
10
15
-VGS , Gate-to-Source Voltage (V)
1600
12
VDS =-10V
9
6
3
0
100
-VDS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
0
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
ID = -4.5A
2.4
10us
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRLMS6802PbF
EAS , Single Pulse Avalanche Energy (mJ)
6.0
-ID , Drain Current (A)
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
80
ID
-1.3A
-2.4A
BOTTOM -3.0A
TOP
60
40
20
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRLMS6802PbF
Micro6 (SOT23 6L) Package Outline
Dimensions are shown in milimeters (inches)
3.00 (.118 )
2.80 (.111 )
1.75 (.068 )
1.50 (.060 )
-A-
LEAD ASSIGNMENTS
-B-
6
5
4
1
2
3
3.00 (.118 )
2.60 (.103 )
0.95 ( .0375 )
6X
2X
D
D
6
5
RECOMMENDED FOOTPRINT
2X 0.95 (.0375 )
S
6X (1.06 (.042 )
4
1
2
3
D
D
G
2.20 (.087 )
0.50 (.019 )
0.35 (.014 )
6X 0.65 (.025 )
0.15 (.006 ) M C A S B S
O
O
0 -10
1.30 (.051 )
0.90 (.036 )
-C-
6X
1.45 (.057 )
0.90 (.036 )
0.10 (.004 )
6 SURFACES
0.15 (.006 )
MAX.
0.20 (.007 )
0.09 (.004 )
0.60 (.023 )
0.10 (.004 )
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6 (SOT23 6L) Part Marking Information
W = (1-26) IF PRECEDE D BY LAST DIGIT OF CALENDAR YEAR
Y = YEAR
W = WE EK
PART NUMBER
T OP
LOT
CODE
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
PART NUMBER CODE REF ERENCE:
A=
B=
C=
D=
E=
F=
G=
H=
IRLMS1902
IRLMS1503
IRLMS6702
IRLMS5703
IRLMS6802
IRLMS4502
IRLMS2002
IRLMS6803
Note: A line above the work week
(as s hown here) indicates Lead-Free.
6
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDE D BY A LETT ER
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
www.irf.com
IRLMS6802PbF
Micro6 Tape & Reel Information
Dimensions are shown in milimeters (inches)
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/05
www.irf.com
7