PD - 93850A
IRF5800
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
D
A
D
1
6
2
5
3
4
VDSS = -30V
D
G
D
S
RDS(on) = 0.085Ω
Top View
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-30
-4.0
-3.2
-32
2.0
1.3
0.016
20.6
± 20
-55 to + 150
V
W/°C
mJ
V
°C
Max.
Units
62.5
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
01/13/03
IRF5800
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
–––
–––
–––
–––
–––
–––
–––
–––
11.4
2.3
2.2
11.4
11
24
14
535
94
68
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = 1mA
0.085
VGS = -10V, ID = -4.0A
Ω
0.150
VGS = -4.5V, ID = -3.0A
–––
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -4.0A
-1.0
VDS = -24V, VGS = 0V
µA
-5.0
VDS = -24V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
17
ID = -4.0A
–––
nC
VDS = -16V
–––
VGS = -10V
17
VDD = -15V, VGS = -10V
17
ID = -1.0A
ns
36
RG = 6.0Ω
20
RD = 15Ω,
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
-2.0
-32
–––
–––
–––
–––
19
16
-1.2
28
24
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, I F = -2.0A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
Surface mounted on FR-4 board, t ≤ 5sec.
Starting TJ = 25°C, L = 2.5mH
R G = 25Ω, I AS = -4.0A. (See Fig 10 )
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IRF5800
100
100
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
10
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
1
-2.70V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
10
1
-2.70V
0.1
0.01
0.1
Fig 1. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
1
V DS = -15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
0.1
2.0
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
10
20µs PULSE WIDTH
TJ = 150 °C
8.0
ID = -4.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5800
800
-VGS , Gate-to-Source Voltage (V)
600
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
400
200
Coss
Crss
0
1
10
ID = -4.0A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
-VDS , Drain-to-Source Voltage (V)
8
12
16
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
4
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.8
1.2
1.6
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS =-16V
100
10us
10
100us
1ms
1
0.1
2.0
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5800
EAS , Single Pulse Avalanche Energy (mJ)
-ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
TC , Case Temperature
125
150
50
ID
-1.8A
-2.5A
BOTTOM -4.0A
TOP
40
30
20
10
0
25
( °C)
50
75
100
125
150
Starting TJ, Junction Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance ( Ω)
IRF5800
0.20
0.16
0.12
ID = -4.0A
0.08
0.04
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
6
16.0
0.25
0.20
VGS = -4.5V
0.15
0.10
0.05
VGS = -10V
0.00
0
5
10
15
20
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
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IRF5800
TSOP-6 Package Outline
TSOP-6 Tape & Reel Information
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7
IRF5800
TSOP-6 Part Marking Information
Notes : T his part marking information applies to devices produced before 02/26/2001
EXAMPLE: T HIS IS AN S I3443DV
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
PART NUMBER
DATE
CODE
TOP
WAFER LOT
NUMBER CODE
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
BOT TOM
WW = (27-52) IF PRECEDED BY A LETTER
PART NUMBER CODE REFERENCE:
3A = SI3443DV
3B = IRF5800
3C = IRF5850
3D = IRF5851
3E = IRF5852
3I = IRF5805
3J = IRF5806
DATE CODE EXAMPLES:
YWW = 9603 = 6C
YWW = 9632 = FF
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
X
Y
Notes : T his part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
Y = YEAR
W = WEEK
PART NUMBER
TOP
PART NUMB ER CODE REFERENCE:
A = SI3443DV
B = IRF5800
C = IRF5850
D = IRF5851
E = IRF5852
I = IRF5805
J = IRF5806
K = IRF5810
L = IRF5804
M = IRF5803
N = IRF5820
LOT
CODE
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
X
Y
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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Data and specifications subject to change without notice. 1/03
8
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