INTERFET SI3443DVPBF

PD-95240
Si3443DVPbF
HEXFET® Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
-2.5V Rated
Lead-Free
D
A
D
1
6
2
5
3
4
VDSS = -20V
D
G
D
S
RDS(on) = 0.065Ω
Top View
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-4.4
-3.5
-20
2.0
1.3
0.016
31
± 12
-55 to + 150
V
W/°C
mJ
V
°C
Max.
Units
62.5
°C/W
A
W
Thermal Resistance
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambientƒ
1
08/31/05
Si3443DVPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-20
–––
–––
–––
–––
-0.60
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.005 ––– V/°C Reference to 25°C, ID = -1mA
0.034 0.065
VGS = -4.5V, I D = -4.4A ‚
0.053 0.090
Ω
VGS = -2.7V, I D = -3.7A ‚
0.060 0.100
VGS = -2.5V, I D = -3.5A ‚
––– -1.2
V
VDS = VGS, ID = -250µA
12 –––
S
VDS = -10V, ID = -4.4 A
––– -1.0
VDS = -20V, VGS = 0V
µA
––– -5.0
VDS = -20V, VGS = 0V, TJ = 70°C
––– -100
VGS = -12V
nA
––– 100
VGS = 12V
11
15
ID = -4.4A
2.2 –––
nC
VDS = -10V
2.9 –––
VGS = -4.5V ‚
12
50
VDD = -10V, VGS = -4.5V ‚
33
60
ID = -1.0A
ns
70 100
RG = 6.0 Ω
72 100
RD = 10 Ω, ‚
1079 –––
VGS = 0V
220 –––
pF
VDS = -10V
152 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.0
–––
–––
-20
–––
–––
–––
–––
51
30
-1.2
77
44
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.7A, VGS = 0V
TJ = 25°C, I F = -1.7A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Starting TJ = 25°C, L = 6.8mH
RG = 25Ω, IAS = -3.0A.
2
www.irf.com
Si3443DVPbF
100
100
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
10
1
-1.50V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
1
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
1
V DS = -15V
20µs PULSE WIDTH
2.5
3.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
1
10
100
Fig 2. Typical Output Characteristics
100
2.0
20µs PULSE WIDTH
TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
-1.50V
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
0.1
1.5
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
3.5
ID = -5.6A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
Si3443DVPbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1200
Ciss
800
400
Coss
Crss
0
1
10
15
-VGS , Gate-to-Source Voltage (V)
1600
ID = -4.5A
12
VDS =-10V
9
6
3
0
100
0
4
-VDS , Drain-to-Source Voltage (V)
16
20
24
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
8
QG , Total Gate Charge (nC)
2.4
10us
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
Si3443DVPbF
EAS , Single Pulse Avalanche Energy (mJ)
5.0
-ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
80
ID
-1.3A
-2.4A
BOTTOM -3.0A
TOP
60
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
Si3443DVPbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
DAT E CODE
Y = YEAR
W = WEEK
PART NUMBER
TOP
PART NUMBER CODE REFERENCE:
A = S I3443DV
B = IRF 5800
C = IRF5850
D = IRF5851
E = IRF5852
F = IRF5801
I = IRF 5805
J = IRF5806
K = IRF 5810
L = IRF5804
M = IRF5803
N = IRF5802
Note: A line above the work week
(as shown here) indicates Lead-F ree.
6
LOT
CODE
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETT ER
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
X
Y
www.irf.com
Si3443DVPbF
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/05
www.irf.com
7