PD - 94891A
IRLML6401PbF
l
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Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
1.8V Gate Rated
Lead-Free
HEXFET® Power MOSFET
G 1
VDSS = -12V
3 D
S
RDS(on) = 0.05Ω
2
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET® power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Micro3™
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
Typ.
Max.
Units
75
100
°C/W
1
11/8/04
IRLML6401PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-12 ––– –––
V
VGS = 0V, ID = -250µA
––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.050
VGS = -4.5V, ID = -4.3A
Ω
––– 0.085
VGS = -2.5V, ID = -2.5A
––– 0.125
VGS = -1.8V, ID = -2.0A
-0.40 -0.55 -0.95
V
VDS = VGS, ID = -250µA
8.6 ––– –––
S
VDS = -10V, ID = -4.3A
––– ––– -1.0
VDS = -12V, VGS = 0V
µA
––– ––– -25
VDS = -9.6V, VGS = 0V, TJ = 55°C
––– ––– -100
VGS = -8.0V
nA
––– ––– 100
VGS = 8.0V
––– 10
15
ID = -4.3A
––– 1.4 2.1
nC VDS = -10V
––– 2.6 3.9
VGS = -5.0V
––– 11 –––
VDD = -6.0V
ns
––– 32 –––
ID = -1.0A
––– 250 –––
RD = 6.0Ω
––– 210 –––
RG = 89Ω
––– 830 –––
VGS = 0V
––– 180 –––
pF
VDS = -10V
––– 125 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.3
–––
–––
-34
–––
–––
–––
–––
22
8.0
-1.2
33
12
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting TJ = 25°C, L = 3.5mH
RG = 25Ω, IAS = -4.3A.
2
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IRLML6401PbF
100
VGS
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
- 1.8V
-1.5V
BOTTOM -1.0V
100
VGS
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.0V
10
1
-1.0V
0.1
20µs PULSE WIDTH
Tj = 25°C
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
TOP
10
1
-1.0V
0.1
20µs PULSE WIDTH
Tj = 150°C
0.01
0.01
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (Α )
T J = 25°C
T J = 150°C
1.0
VDS = -12V
20µs PULSE WIDTH
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
100.0
0.1
10
-VDS, Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
10.0
1
ID = -4.3A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLML6401PbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
600
400
Coss
Crss
200
VDS =-10V
6
4
2
0
1
10
ID = -4.3A
8
0
100
0
4
12
16
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-IID , Drain Current (A)
100
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
-VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
8
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
-ISD , Reverse Drain Current (A)
C, Capacitance(pF)
1000
10
-VGS , Gate-to-Source Voltage (V)
1200
1.8
10us
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLML6401PbF
EAS , Single Pulse Avalanche Energy (mJ)
5.0
-ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
80
ID
-1.9A
-3.4A
BOTTOM -4.3A
TOP
60
40
20
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS(on) , Drain-to -Source Voltage ( Ω )
0.10
0.09
0.08
0.07
0.06
0.05
Id = -4.3A
0.04
0.03
0.02
1.0
2.0
3.0
4.0
5.0
6.0
7.0
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
IRLML6401PbF
0.20
VGS = -1.8V
VGS = -2.5V
0.15
0.10
VGS = -4.5V
0.05
0.00
0
10
-VGS, Gate -to -Source Voltage ( V )
20
30
40
-I D , Drain Current ( A )
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 13. Typical On-Resistance Vs.
Drain Current
-VGS(th) Gate threshold Voltage (V)
0.8
0.7
ID = -250µA
0.6
0.5
0.4
0.3
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
6
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IRLML6401PbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
M
B
O
L
6
5
D
3
6
ccc
2
C B A
D
E
E1
e
5
B
e
A
A1
A2
b
c
E
E1
1
DIMENS IONS
e1
L
L1
0
aaa
e1
bbb
ccc
4
MILLIMET ERS
MAX
MIN
1.12
0.89
0.10
0.01
0.88
1.02
0.30
0.50
0.08
0.20
3.04
2.80
2.10
2.64
1.40
1.20
INCHES
MIN
MAX
.036
.044
.0004
.0039
.035
.040
.0119
.0196
.0032
.0078
.111
.119
.083
.103
.048
.055
0.95 BS C
1.90 BS C
0.40
0.60
.0375 B S C
.075 BS C
.0158
.0236
0.25 B S C
0°
8°
0.10
0.20
.0118 B S C
0°
8°
.004
.008
0.15
.006
H
A A2
L1
3X b
A1
bbb
aaa C
C A B
3 S URF
0
7
3X L
RECOMMENDED FOOT PRINT
NOT ES
1. DIMENS IONING AND T OL ER ANCING PER AS ME Y14.5M-1994.
0.972
3X [.038]
2. DIMENS IONS ARE SHOWN IN MIL LIMET E RS AND INCHE S.
2.742
[.1079]
3. CONT ROLL ING DIME NS ION: MILLIME TE R.
4 DAT UM PLANE H IS L OCAT ED AT T HE MOL D PARTING LINE.
5 DAT UM A AND B T O BE DE TE RMINE D AT DATUM PL ANE H.
6 DIMENS IONS D AND E1 ARE MEAS URED AT DATUM PLANE H.
7 DIMENS ION L IS T HE LE AD LE NGT H FOR S OLDER ING T O A S UB ST RATE .
8. OUT LINE CONFORMS T O JE DEC OUT LINE T O-236AB.
0.95
[.0375]
3X
0.802
[.031]
1.90
[.075]
Micro3 (SOT-23/TO-236AB) Part Marking Information
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
PART NUMBER
Y = YEAR
W = WEEK
LOT
CODE
PART NUMBER CODE REF ERENCE:
A=
B=
C=
D=
E=
F=
G=
H=
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IRLML2402
IRLML2803
IRLML6302
IRLML5103
IRLML6402
IRLML6401
IRLML2502
IRLML5203
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LET TER
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
7
IRLML6401PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/04
8
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