PD - 90732B IRHE7110 IRHE8110 REPETITIVE AVALANCHE AND dv/dt RATED ® HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 100Volt, 0.60Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHE7110 IRHE8110 BVDSS 100V 100V n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Parameter VGS EAS dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight www.irf.com ID 3.5A 3.5A Features: Pre-Irradiation Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C RDS(on) 0.60Ω 0.60Ω IRHE7130, IRHE8130 3.5 2.2 14 15 0.12 ±20 68 5.5 -55 to 150 Units A W W/°C V mJ V/ns o 300 (0.063 in. (1.6mm) from case for 10s) 0.42 (typical) C g 1 10/14/98 IRHE7110, IRHE8110 Devices Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current 100 — — V — 0.10 — V/°C — — 2.0 0.8 — — — — — — — — 0.60 0.69 4.0 — 25 250 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 1.8 100 -100 11 3.0 3.3 20 25 40 40 — LS Internal Source Inductance — 4.3 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 290 100 15 — — Ω V S( ) Ω µA nA nC ns nH Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 2.2A VGS = 12V, ID = 3.5A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 2.2A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 3.5A VDS = Max Rating x 0.5 VDD = 50V, ID = 3.5A, RG = 7.5Ω Measured from drain Modified MOSFET symlead, 6mm (0.25 in) bol showing the internal from package to center inductances. of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) — — — — 26 104 A VSD t rr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — 1.4 820 12 V ns µC ton Forward Turn-On Time Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 26A, VGS = 0V Tj = 25°C, IF = 26A, di/dt ≤ 100A/µs VDD ≤ 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Rth-PCB 2 Junction-to-Case Junction-to-PCBoard Min Typ Max Units — — — 27 8.3 — °C/W Test Conditions Solder to a copper clad PC board www.irf.com IRHE7110, IRHE8110 Devices Radiation Characteristics Radiation Performance of Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier comprises three radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MIL-STD-750, test method 1019 condition A. International Rectifier has imposed a standard gate condition of 12 volts per note 5 and a VDS bias condition equal to 80% of the device rated voltage per note 6. Pre- and post- irradiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHE7130. Post-irradiation limits of the devices irradiated to 1 x 106 Rads (Si) are presented in Table 1. Low Dose Rate VSD High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/Sec (See Table 2). International Rectifier radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3. IRHE7110 Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 Table 1, column 2, IRHE8130. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. IRHE8110 100K Rads (Si) 1000K Rads (Si) Units Test Conditions Min Max Min Max Drain-to-Source Breakdown Voltage 100 Gate Threshold Voltage 2.0 Gate-to-Source Leakage Forward — Gate-to-Source Leakage Reverse — Zero Gate Voltage Drain Current — Static Drain-to-Source — On-State Resistance One Diode Forward Voltage — — 4.0 100 -100 25 0.60 100 1.25 — — — — — 4.5 100 -100 25 0.80 nA µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=0.8 x Max Rating, VGS =0V VGS = 12V, ID = 2.2A 1.5 — 1.5 V TC = 25°C, IS =3.5A,VGS = 0V Table 2. High Dose Rate V 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter VDSS Drain-to-Source Voltage IPP di/dt L1 Min Typ Max Min Typ Max Units Test Conditions — — 80 — — 80 V Applied drain-to-source voltage during gamma-dot — 20 — — 20 — A Peak radiation induced photo-current — — 800 — — 160 A/µsec Rate of rise of photo-current 0.1 — — 0.5 — — µH Circuit inductance required to limit di/dt Table 3. Single Event Effects Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Ni 28 3x 105 www.irf.com Range (µm) ~43 VDSBias (V) VGS Bias (V) 100 -5 3 IRHE7110, IRHE8110 Devices Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Post-Irradiation Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure www.irf.com Post-Irradiation IRHE7110, IRHE8110 Devices Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure www.irf.com Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation Fig 9. High Dose Rate (Gamma Dot) Test Circuit 5 IRHE7110, IRHE8110 Devices Radiation Characterstics Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc Fig 10. Typical Output Characteristics Pre-Irradiation Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si) 6 Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) www.irf.com Radiation Characterstics IRHE7110, IRHE8110 Devices Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 80 Vdc Fig 14. Typical Output Characteristics Pre-Irradiation Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) www.irf.com 7 IRHE7110, IRHE8110 Devices 8 Pre-Irradiation Fig 18. Typical Output Characteristics Fig 19. Typical Output Characteristics Fig 20. Typical Transfer Characteristics Fig 21. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHE7110, IRHE8110 Devices 30 Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 24. Typical Source-Drain Diode Forward Voltage Fig 25. Maximum Safe Operating Area www.irf.com 9 IRHE7110, IRHE8110 Devices Pre-Irradiation V DS VGS RD D.U.T. RG + -V DD 12V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 27a. Switching Time Test Circuit VDS 90% 10% VGS Fig 26. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 27b. Switching Time Waveforms Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 www.irf.com Pre-Irradiation IRHE7110, IRHF8110 Devices 1 5V L VD S D .U .T RG IA S 12V 20V D R IV E R + - VD D A 0 .0 1 Ω tp Fig 29a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 29c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 29b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig30a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 30b. Gate Charge Test Circuit 11 Pre-Irradiation IRHE7110, IRHE8110 Devices See Figures 18 through 30 for pre-radiation Total Dose Irradiation with VGS Bias. curves Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. VDD = 25V, Starting TJ = 25°C, Peak IL = 3.5A,L>3.0mH RG=25Ω ISD ≤ 3.5A, di/dt ≤ 140A/µs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG =7.5Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, codition A. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. All Pre-Irradiation and Post-Irradiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions — Leadless Chip Carrier (LCC) Package IR Case Style Leadless Chip Carrier (LCC) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 10/98 12 www.irf.com