IRF IRHM7450

PD - 90673B
IRHM7450
JANSR2N7270
500V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
REF: MIL-PRF-19500/603
®
RAD-Hard HEXFET TECHNOLOGY
™
Product Summary
Part Number
IRHM7450
IRHM3450
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on)
0.45Ω
0.45Ω
ID
11A
11A
QPL Part Number
JANSR2N7270
JANSF2N7270
IRHM4450
500K Rads (Si)
0.45Ω
11A
JANSG2N7270
IRHM8450
1000K Rads (Si)
0.45Ω
11A
JANSH2N7270
International Rectifier’s RAD-Hard TM HEXFET ®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-254AA
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
11
7.0
44
150
1.2
±20
500
11
15
3.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
C
g
For footnotes refer to the last page
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1
05/18/06
IRHM7450, JANSR2N7270
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
500
—
—
V
—
0.6
—
V/°C
—
—
2.0
4.0
—
—
—
—
—
—
—
—
0.45
0.50
4.0
—
50
250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
150
30
75
45
190
190
130
—
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Ciss
C oss
C rss
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
Typ Max Units
4000
330
52
Ω
V
S( )
—
—
—
Ω
BVDSS
µA
nA
nC
ns
nH
pF
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 7.0A „
VGS = 12V, ID = 11A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 7.0A „
VDS= 400V,VGS=0V
VDS = 400V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 11A
VDS = 250V
VDD = 250V, ID = 11A,
VGS = 12V, RG = 2.35Ω
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
11
44
1.6
1100
16
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 11A, VGS = 0V Ã
Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max
—
—
—
— 0.83
0.21 —
—
48
Units
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Radiation
Characteristics
Pre-Irradiation
IRHM7450, JANSR2N7270
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage Ã
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-254AA)
Diode Forward Voltage Ã
300 K- 1000K Rads (Si)2
Test Conditions
Units
Min
Max
Min
Max
500
2.0
—
—
—
—
—
4.0
100
-100
50
0.45
500
1.25
—
—
—
—
—
4.5
100
-100
50
0.6
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
V GS = 20V
VGS = -20 V
VDS=80V, VGS =0V
VGS = 12V, ID = 7.0A
—
0.45
—
0.6
Ω
VGS = 12V, ID = 7.0A
—
1.6
—
1.6
V
VGS = 0V, IS = 11A
V
nA
1. Part number IRHM7450 (JANSR2N7270)
2. Part numbers IRHM3450 (JANSF2N7270), IRHM4450 (JANSG2N7270) and IRHM8450 (JANSH2N7270)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Ni
VDS (V)
Energy
Range
(MeV/(mg/cm ))
(MeV)
(µm)
@ VGS=0V
@VGS=-5V
28
265
41
275
275
2
@VGS=-10V @VGS=-15V @VGS=-20V
-
-
-
400
VDS
300
200
Ni
100
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHM7450, JANSR2N7270
Fig 1. Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
4
Post-Irradiation
Pre-Irradiation
Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
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Post-Irradiation
Pre-Irradiation
IRHM7450, JANSR2N7270
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of
VGSS Equals 12 Volts
During Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
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Fig 8b. VDSS Stress
Equals 80% of BVDSS
During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5
RadiationPost-Irradiation
Characteristics
Pre-Irradiation
IRHM7450, JANSR2N7270
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0
Vdc
Fig 10. Typical Output Characteristics
Pre-Irradiation
Fig 12. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
6
Fig 11. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 13. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
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Radiation Characteristics
Pre-Irradiation
IRHM7450, JANSR2N7270
Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 400 Vdc
Fig 14. Typical Output Characteristics
Pre-Irradiation
Fig 15. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 17. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
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IRHM7450, JANSR2N7270
Fig 18. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
8
Pre-Irradiation
Fig 19. Typical Output Characteristics
Fig 21. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
IRHM7450, JANSR2N7270
Fig 22. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 23. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 24. Typical Source-Drain Diode
Forward Voltage
Fig 25. Maximum Safe Operating Area
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IRHM7450, JANSR2N7270
Pre-Irradiation
VDS
V GS
RD
D.U.T.
RG
+
- VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 27a. Switching Time Test Circuit
VDS
90%
10%
VGS
Fig 26. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 27b. Switching Time Waveforms
Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
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Pre-Irradiation
IRHM7450, JANSR2N7270
15V
L
VDS
D.U.T
RG
IAS
VGS
20V
DRIVER
+
- VDD
A
0.01Ω
tp
Fig 29a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 29c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 29b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 30a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
11
IRHM7450, JANSR2N7270
Pre-Irradiation
Foot Notes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
400 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Á VDD = 25V, starting TJ = 25°C, L ≥ 7.4mH
Peak IL = 11A, VGS = 12V
 I SD ≤ 11A, di/dt ≤ 140A/µs,
VDD ≤ 500V, TJ ≤ 150°C
Case Outline and Dimensions — Low-Ohmic TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
6.60 [.260]
6.32 [.249]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
2X
B
3
>@
>@
3X
3.81 [.150]
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
>@
0$;
1.14 [.045]
0.89 [.035]
0.36 [.014]
3.81 [.150]
B A
127(6
1.
2.
3.
4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
CONTROLLING DIMENSION: INCH.
CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2006
12
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