BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 225 mWatts CURRENT SOT- 23 Unit: inch (mm) FEATURES • General purpose amplifier applications .056(1.40) • Pb free product are available : 99% Sn above can meet Rohs .103(2.60) environment substance directive request .047(1.20) • Collector current IC = 100mA .007(.20)MIN .119(3.00) .110(2.80) MECHANICAL DATA .083(2.10) .066(1.70) Case: SOT-23, Plastic .086(2.20) • NPN epitaxial silicon, planar design .006(.15) .002(.05) .044(1.10) Approx. Weight: 0.008 gram .006(.15)MAX .020(.50) .013(.35) D evice M arking: B C 846A =46A B C 847A =47A B C 848A =48A B C 846B =46B B C 847B =47B B C 848B =48B B C 849B =49B B C 850B =50B B C 847C =47C B C 848C =48C B C 849C =49C B C 850C =50C .035(0.90) Terminals: Solderable per MIL-STD-202G, Method 208 ABSOLUTE RATINGS PARAMETER Symbol Value Units Collector - Emitter Voltage B C 846 BC847,BC850 BC848,BC849 VCEO 65 45 30 V Collector - Base Voltage B C 846 BC847,BC850 BC848,BC849 VCBO 80 50 30 V Emitter - Base Voltage B C 846 BC847,BC850 BC848,BC849 VEBO 6.0 6.0 5.0 V IC 100 mA S ym bol Value U nits M ax P ow erD issipation (N ote 1) P TO T 225 mW Therm alR esistance ,Junction to A m bient RθJA 556 Junction Tem perature TJ -55 to 150 O C S torage Tem perature TISTG -55 to 150 O C Collector Current - Continuous THERMAL CHARACTERISTICS PA R A M E TE R O C /W Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. REV.0-MAR.7.2005 PAGE . 1 BC846,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS PA RA M E TE R S ym b o l Te s t C o n d i t i o n M IN . T YP. MA X . U ni t s B C 8 4 6 A /B C o lle c to r - E mi tte r B re a k d o wn Vo lta g e B C 8 4 7 A /B /C ,B C 8 5 0 B /C B C 8 4 8 A /B /C ,B C 8 4 9 B /C V (B R) C E O IC = 1 0 m A , IB = 0 65 45 30 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e B C 8 4 6 A /B B C 8 4 7 A /B /C ,B C 8 5 0 B /C B C 8 4 8 A /B /C ,B C 8 4 9 B /C V (B R) C B O IC = 1 0 u A , IE = 0 80 50 30 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e B C 8 4 6 A /B B C 8 4 7 A /B /C ,B C 8 5 0 B /C B C 8 4 8 A /B /C ,B C 8 4 9 B /C V (B R) E B O IE = 1 0 u A , IC = 0 6 .0 6 .0 5 .0 - - V E m i t t e r - B a s e C ut o f f C ur r e nt IE B O V E B =5 - - 100 nA C o l l e c t o r - B a s e C ut o f f C ur r e nt IC B O V C B = 3 0 V , IE = 0 V C B = 3 0 V , IE = 0 , T J = 1 5 0 O C - - 15 5 .0 nA uA B C 8 4 6 ~ B C 8 4 8 S uf f i x " A " B C 8 4 6 ~ B C 8 5 0 S uf f i x " B " B C 8 4 7 ~ B C 8 5 0 S uf f i x " C " hF E IC = 1 0 u A , V C E = 5 V - 90 150 270 - - B C 8 4 6 ~ B C 8 4 8 S uf f i x " A " B C 8 4 6 ~ B C 8 5 0 S uf f i x " B " B C 8 4 7 ~ B C 8 5 0 S uf f i x " C " hF E IC = 2 . 0 m A , V C E = 5 V 11 0 200 420 180 290 520 220 450 800 - D C C ur r e nt G a i n D C C ur r e nt G a i n C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e V C E (S AT) IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A - - 0 .2 5 0 .6 V B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e V C E (S AT) IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A - 0 .7 0 .9 - V B a s e - E mi tte r Vo lta g e V C E (S AT) IC = 2 m A , V C E = 5 . 0 V IC = 1 0 m A , V C E = 5 . 0 V 0 .5 8 - 0 .6 6 0 - 0 .7 0 0 .7 7 V - - 4 .5 pF C o l l e c t o r - B a s e C a p a c i t a nc e C CBO V C B = 1 0 V , IE = 0 , f = 1 M H NPN REV.0-MAR.7.2005 PAGE . 2 BC846,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS CURVE (BC846A,BC847A,BC848A) 300 TJ =150˚ C VCB=30V 250 TJ=100˚ C 200 10 hFE ICB0, Collector Current (nA) 100 TJ=25 C 150 100 1 VCE=5V 50 0 0.01 0 25 50 75 100 125 150 0.1 1 10 100 1000 Collector Current, IC (mA) Junction Temperature, TJ (OC) Fig. 1. Typical ICB0 vs. Junction Temperature Fig. 2. Typical hFE vs. Collector Current 1200 1000 1000 TJ = 25 ˚C TJ = 100 ˚C TJ = 100 ˚C VCE(sat), (mV) VBE(ON), (mV) 800 600 TJ = 150 ˚C 100 TJ = 25 ˚C 400 VCE=5V IC/IB=20 TJ = 150 ˚C 200 0 0.01 0.1 1 10 100 10 0.01 1000 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current Fig. 4. Typical VCE(SAT) vs. Collector Current 10 1200 TJ = 25 ˚C 1000 Cib (EB) VBE(sat), (mV) Capacitance, C (pF) TJ = 25 ˚C 800 TJ = 100 ˚C 600 400 200 IC/IB=20 TJ = 150 ˚C 0 0.01 Cob (CB) 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse Voltage REV.0.MAR.7.2005 PAGE . 3 BC846,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS CURVE (BC846B,BAC847B,BC848B,BC849B,BC850B) 500 VCE=5V TJ =150˚ C 450 VCB=30V 400 350 10 TJ=100˚ C 300 hFE ICB0, Collector Current (nA) 100 250 TJ =25 ˚C 200 1 150 100 50 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 1000 Collector Current, IC (mA) O Junction Temperature, TJ ( C) Fig. 1. Typical ICB0 vs. Junction Temperature Fig. 2. Typical hFE vs. Collector Current 1000 1200 1000 TJ = 25 ˚C TJ = 100 ˚C VCE(sat), (mV) VBE(ON), (mV) 800 600 TJ = 100 ˚C TJ = 150 ˚C 100 400 TJ = 25 ˚C 200 0 0.01 0.1 IC/IB=20 VCE=5V TJ = 150 ˚C 1 10 100 10 0.01 1000 0.1 1 100 1000 Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current Fig. 4. Typical VCE(SAT) vs. Collector Current 1200 10 1000 Cib (EB) 800 TJ = 100 ˚C 600 400 200 Cob (CB) IC/IB=20 TJ = 150 ˚C 0 0.01 1 0.1 1 10 100 0.1 Collector Current, IC (mA) Fig. 5. Typical VBE(SAT) vs. Collector Current REV.0-MAR.7.2005 TJ = 25 ˚C Capacitance, C (pF ) TJ = 25 ˚C VBE(sat), (mV) 10 Collector Current, IC (mA) 1 10 100 Reverse Voltage (V) Fig. 6. Typical Capacitances vs. Reverse Voltage PAGE . 4 BC846,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS CURVE (BAC847C,BC848C,BC849C,BC850C) 1200 100 TJ =150˚ C 1000 10 hFE ICB0, Collector Current (nA) VCE=5V VCB=30V 800 TJ =100˚ C 600 TJ =25 C 400 1 200 0 0.01 0 25 50 75 100 125 150 0.1 1 10 100 1000 Collector Current, IC, (mA) Junction Temperature, TJ (OC) Fig. 1. Typical ICB0 vs. Junction Temperature Fig. 2. Typical hFE vs. Collector Current 1000 1200 1000 TJ = 25 ˚C TJ = 100 ˚C VCE(sat), (mV) VBE(ON), (mV) 800 600 TJ = 100 ˚C TJ = 150 ˚C 100 400 TJ = 25 ˚C 200 VCE=5V TJ = 150 ˚C 0 0.01 0.1 1 10 100 IC/IB=20 10 0.01 1000 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current Fig. 4. Typical VCE(SAT) vs. Collector Current 1200 10 1000 TJ = 25 ˚C Cib (EB) VBE(sat), (mV) 800 Capacitance, C (pF ) TJ = 25 ˚C TJ = 100 ˚C 600 400 Cob (CB) IC/IB=20 200 TJ = 150 ˚C 0 0.01 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse Voltage REV.0-MAR.7.2005 PAGE . 5 BC846,BC847,BC848,BC849,BC850 SERIES MOUNTING PAD LAYOUT Unit: inch (mm) 0.078(2.0) 0.035(0.9) SOT-23 0.031(0.8) 0.037(0.95) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-NOV.17.2004 PAGE . 6