BC 846 ... BC 850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856, BC 857, BC 858 BC 859, BC 860 (PNP) 2 1 Type Marking Pin Configuration BC 846A 1As 1=B 2=E 3=C SOT-23 BC 846B 1Bs B=1 2=E 3=C SOT-23 BC 847A 1Es B=1 2=E 3=C SOT-23 BC 847B 1Fs 1=B 2=E 3=C SOT-23 BC 847C 1Gs 1=B 2=E 3=C SOT-23 BC 848A 1Js 1=B 2=E 3=C SOT-23 BC 848B 1Ks 1=B 2=E 3=C SOT-23 BC 848C 1Ls 1=B 2=E 3=C SOT-23 BC 849B 2Bs 1=B 2=E 3=C SOT-23 BC 849C 2Cs 1=B 2=E 3=C SOT-23 BC 850B 2Fs 1=B 2=E 3=C SOT-23 BC 850C 2Gs 1=B 2=E 3=C SOT-23 1 VPS05161 Package Nov-11-1999 BC 846 ... BC 850 Maximum Ratings Parameter Symbol BC 846 BC 847 BC 848 BC 850 BC 849 Unit Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 6 6 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction ambient 1) RthJA ≤310 Junction - soldering point RthJS ≤240 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC 846 65 - - BC 847/850 45 - - BC 848/849 30 - - BC 846 80 - - BC 847/850 50 - - BC 848/849 30 - - Collector-base breakdown voltage IC = 10 µA, IB = 0 V V(BR)CEO V(BR)CBO 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu 2 Nov-11-1999 BC 846 ... BC 850 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC 846 80 - - BC 847/850 50 - - BC 848/849 30 - - BC 846/847 6 - - BC 848-850 5 - - ICBO - - 15 nA ICBO - - 5 µA Emitter-base breakdown voltage IE = 1 µA, IC = 0 V V(BR)CES V(BR)EBO Collector cutoff current VCB = 40 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V hFE -group A - 140 - hFE -group B - 250 - hFE -group C - 480 - hFE -group A 110 180 220 hFE -group B 200 290 450 hFE -group C 420 520 800 hFE DC current gain 1) IC = 2 mA, VCE = 5 V - hFE Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 90 250 IC = 100 mA, IB = 5 mA - 200 600 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 900 - IC = 2 mA, VCE = 5 V 580 660 700 IC = 10 mA, VCE = 5 V - - 770 Base-emitter saturation voltage 1) VBEsat Base-emitter voltage 1) VBE(ON) 1) Pulse test: t ≤ 300µs, D = 2% 3 Nov-11-1999 BC 846 ... BC 850 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT - 250 - MHz Ccb - 3 - pF Ceb - 8 - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz h11e hFE -gr.A - 2.7 - hFE -gr.B - 4.5 - hFE -gr.C - 8.7 - Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A - 1.5 - hFE -gr.B - 2 - hFE -gr.C - 3 - hFE -gr.A - 200 - hFE -gr.B - 330 - hFE -gr.C - 600 µS h22e hFE -gr.A - 18 - hFE -gr.B - 30 - hFE -gr.C - 60 - F - 1.2 4 Vn - - Noise figure IC = 100 µA, VCE = 5 V, RS = 1 kΩ, BC 849 f = 1 kHz, ∆ f = 200 Hz BC 850 Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 kΩ, - h21e Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz 10-4 h12e Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz kΩ dB 0.135 µV BC 850 f = 10 ... 50 Hz 4 Nov-11-1999 BC 846 ... BC 850 Total power dissipation Ptot = f (TA*;TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) * Package mounted on epoxy EHP00360 400 Ptot C CB0 ( C EB0 ) mW 12 pF BC 846...850 EHP00361 10 300 8 TA C EB TS 200 6 4 C CB 100 2 0 0 50 100 ˚C 0 10 -1 150 5 10 0 V TA ; TS VCB0 Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V EHP00362 10 3 Ptot max Ptot DC EHP00363 10 3 MHz tp tp D= T 10 1 (VEB0 ) fT 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 -1 0 5 10 0 5 10 1 mA 10 2 ΙC tp 5 Nov-11-1999 BC 846 ... BC 850 Collector cutoff current ICBO = f (TA) Collector-emitter saturation voltage VCB = 30V IC = f (VCEsat), h FE = 20 EHP00415 10 4 Ι CB0 nA ΙC mA max 10 3 5 10 EHP00367 10 2 100 C 25 C -50 C 10 1 5 typ 2 5 10 10 0 1 5 5 10 0 0 50 100 ˚C 10 -1 150 0 0.1 0.2 0.4 0.3 TA DC current gain hFE = f (IC ) Base-emitter saturation voltage VCE = 5V IC = f (VBEsat), hFE = 20 EHP00365 10 3 h FE 5 EHP00364 10 2 100 C Ι C mA 100 C 25 C -50 C 25 C 10 2 -50 C 10 1 5 5 10 1 10 0 5 5 10 0 10 -2 5 V 0.5 VCEsat 10 -1 5 10 0 5 10 1 mA 10 -1 10 2 ΙC 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 6 Nov-11-1999 BC 846 ... BC 850 h parameter he = f (IC) normalized h parameter he = f (VCE) normalized VCE = 5V IC = 2mA EHP00368 10 2 he EHP00369 2.0 5 he h 11e 5 1.5 VCE = 5 V 10 1 Ι C = 2 mA h 21 e h 12e h 11 e h 12 e 1.0 h 22 e 10 0 h 21e 0.5 5 h 22e 10 -1 0 10 -1 5 10 0 mA 10 1 0 10 20 V ΙC VCE Noise figure F = f (VCE ) Noise figure F = f (f) IC = 0.2mA, RS = 2kΩ, f = 1kHz IC = 0.2mA, VCE = 5V, R S = 2kΩ 20 F BC 846...850 EHP00370 20 BC 846...850 EHP00371 dB dB F 15 15 10 10 5 5 0 10 -1 30 5 10 0 10 1 V 0 10 -2 10 2 VCE 10 -1 10 0 10 1 kHz 10 2 f 7 Nov-11-1999 BC 846 ... BC 850 Noise figure F = f (IC ) Noise figure F = f (IC) VCE = 5V, f = 120Hz VCE = 5V, f = 1kHz 20 BC 846...850 EHP00372 20 BC 846...850 EHP00373 dB dB F F 15 15 RS = 1 MΩ 100 k Ω 10 k Ω RS = 1 MΩ 100 k Ω 10 k Ω 10 10 500 Ω 1 kΩ 5 5 500 Ω 1 kΩ 0 10 -3 10 -2 10 -1 10 0 0 10 -3 mA 10 1 10 -2 10 -1 10 0 mA 10 1 ΙC ΙC Noise figure F = f (IC ) VCE = 5V, f = 10kHz 20 BC 846...850 EHP00374 dB F 15 R S = 1 MΩ 100 kΩ 10 10 k Ω 500 Ω 5 1 kΩ 0 10 -3 10 -2 10 -1 10 0 mA 10 1 ΙC 8 Nov-11-1999