BC846~BC850 NPN Silicon Epitaxial Transistors For switching and amplifier applications As complementary types the PNP transistors BC856~BC860 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER Collector Base Voltage BC846 BC847, BC850 BC848, BC849 Collector Emitter Voltage BC846 BC847, BC850 BC848, BC849 Emitter Base Voltage BC846, BC847 BC848, BC849, BC850 Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM Ptot TJ TS VALUE 80 50 30 65 45 30 6 5 100 200 200 150 - 65 to + 150 UNIT V V V mA mA mW ℃ ℃ Characteristics at Tamb = 25℃ PARAMETER SYMBOL DC Current Gain at VCE = 5 V, IC = 2 mA A B C Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Emitter On Voltage at IC = 2 mA, VCE = 5 V at IC = 10 mA, VCE = 5 V Collector Cutoff Current at VCB = 30 V Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Input Capacitance at VEB = 0.5 V, f = 1 MHz Noise Figure at IC = 200 µA, VCE = 5 V, BC846, BC847, BC848 RG = 2 KΩ, f = 1 KHz BC849, BC850 at IC = 200 µA, VCE = 5 V, BC849 RG = 2 KΩ, f = 30~15 KHz BC850 Website: www.kingtronics.com Email: [email protected] hFE MIN. 110 200 420 TYP. - MAX. 220 450 800 UNIT - VCEsat - - 250 600 mV VBE(on) 580 - - 700 720 mV ICBO - - 15 nA fT - 300 - MHz Cob - - 6 pF Cib - 9 - pF NF - - Tel: (852) 8106 7033 10 4 4 3 dB Fax: (852) 8106 7099 1 BC846~BC850 NPN Silicon Epitaxial Transistors RATINGS AND CHARACTERISTIC CURVES BC846 THUR BC850 Note: Specifications are subject to change without notice. Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 2