JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE) E C 1. BASE 2. EMITTER PPLICATION general purpose amplifier, switching. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 3. COLLECTOR BACK E B MARKING:1P C 1P B E MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value VCBO Collector-Base Voltage 75 VCEO 40 Collector-Emitter Voltage VEBO 6 Emitter-Base Voltage IC Collector Current -Continuous 600 PC Collector Dissipation 150 TJ Junction Temperature 150 Tstg Storage Temperature -55to+150 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol Units V V V mA mW ℃ ℃ unless Test otherwise conditions specified） MIN TYP MAX 75 V(BR)CEO IC= 10mA, IB=0 40 V V(BR)EBO IE=10μA,IC=0 6 V V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage V Collector cut-off current ICBO VCB=70 V,IE=0 0.1 Collector cut-off current ICEX VCE=60V,VBE(off)=3V 0.1 Emitter cut-off current DC current gain IEBO VEB= 3V,IC=0 hFE(1) VCE=10V,IC= 0.1mA 35 hFE(2) VCE=10V,IC= 1mA 50 hFE(3) VCE=10V,IC= 10mA 75 hFE(4) VCE=10V,IC= 150mA 100 hFE(5) VCE=10V,IC= 500mA IC=500mA,IB= 50mA IC=150mA,IB=15mA IC=500mA,IB= 50mA IC=150mA,IB=15mA VCE=20V, IC= 20mA f=100MHz 40 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency UNIT IC= 10μA,IE=0 Collector-base breakdown voltage fT 0.1 μA μA μA 400 1 0.3 2 1.2 300 V V MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 8 pF Noise figure NF VCB=10V,Ic=0.1mA, f=1KHz,Rs=1KΩ 4 dB ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Delay time Rise time Storage time Fall time Symbol td tr tS tf unless otherwise Test conditions VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA VCC=30V, IC=150mA IB1=-IB2=15mA specified） MIN TYP MAX 10 25 225 60 UNIT nS nS nS nS MMBT2222AE Sym bol A A1 b b1 D E D2 E2 e L L1 L2 L3 L4 k z D im e n s io n s In M illim e t e r s M in . M ax. 0 .4 5 0 0 .5 5 0 0 .0 1 0 0 .0 9 0 0 .2 3 0 0 .3 3 0 0 .3 2 0 R E F . 1 .5 5 0 1 .6 5 0 1 .5 5 0 1 .6 5 0 0 .7 5 0 R E F . 1 .0 0 0 R E F . 1 .0 0 0 T Y P . 0 .2 8 0 R E F . 0 .2 3 0 R E F . 0 .1 8 0 R E F . 0 .2 5 0 R E F . 0 .2 0 0 R E F . 0 .3 2 0 R E F . 0 .1 6 0 R E F . D im e n s io n s In In c h e s M in . M ax. 0 .0 1 8 0 .0 2 2 0 .0 0 0 0 .0 0 4 0 .0 0 9 0 .0 1 3 0 .0 1 3 R E F . 0 .0 6 1 0 .0 6 5 0 .0 6 1 0 .0 6 5 0 .0 3 0 R E F . 0 .0 4 0 R E F . 0 .0 4 0 T Y P . 0 .0 1 1 R E F . 0 .0 0 9 R E F . 0 .0 0 7 R E F . 0 .0 1 0 R E F . 0 .0 0 8 R E F . 0 .0 1 3 R E F . 0 .0 0 6 R E F .