JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A TRANSISTOR ( NPN ) SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P1 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC PC TJ, Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless Test otherwise conditions Collector-base breakdown voltage V(BR)CBO IC= 10μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage Value Units 75 V 40 6 600 300 -55to+150 V V mA mW ℃ specified） MIN TYP MAX UNIT 75 V IC= 10mA， IB=0 40 V V(BR)EBO IE=10μA， IC=0 6 V Collector cut-off current ICBO VCB=70 V , IE=0 0.1 μA Collector cut-off current ICEX VCE=60V , VBE(off)=3V 0.1 μA Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 μA HFE(1) VCE=10V, IC= 150mA 100 HFE(2) VCE=10V, IC= 0.1mA 40 HFE(3) VCE=10V, IC= 500mA 42 DC current gain IE=0 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB=15mA Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA Transition frequency VCE=20V, IC= 20mA fT f=100MHz Delay time td Rise time tr Storage time tS Fall time tf 300 0.6 0.3 1.2 300 V V MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 10 nS 25 nS VCC=30V, IC=150mA IB1=-IB2=15mA 225 nS 60 nS Typical Characteristics 3DK2222A