MBR2045CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • Guardring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8″ http://onsemi.com Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS 1 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B2045P 2, 4 3 4 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 135°C) IF(AV) 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, Per Diode Leg TC = 135°C) IFRM 20 A Non–Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg –65 to +175 °C Operating Junction Temperature TJ –65 to +150 °C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) 1 2 3 CASE 221A TO–220AB PLASTIC MARKING DIAGRAM YY WW B2045P AKA YY = Year WW = Work Week B2045P= Device Code AKA = Diode Polarity ORDERING INFORMATION Device MBR2045CTP Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 2 1 Package Shipping TO–220 50 Units/Rail Publication Order Number: MBR2045CTP/D MBR2045CTP THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction to Case Symbol Value Unit RθJC 2.0 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 10 Amps, TC = 125°C) (iF = 20 Amps, TC = 125°C) (iF = 20 Amps, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR Volts 0.57 0.72 0.84 mA 15 0.1 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% 100 75°C 125°C 25°C 10 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100 25°C 10 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage 800 0.01 125°C 700 0.001 C, CAPACITANCE (pF) IR, REVERSE CURRENT (A) 75°C 125°C 75°C 0.0001 0.00001 25°C 0.000001 600 500 400 300 200 100 0.0000001 0 5 20 25 30 35 40 10 15 VR, REVERSE VOLTAGE (VOLTS) 45 50 0 0 Figure 3. Typical Reverse Current 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance http://onsemi.com 2 45 50 10 18 16 dc RATED VOLTAGE APPLIED 14 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) MBR2045CTP 12 10 SQUARE WAVE 8 6 4 2 0 130 140 145 150 135 TC, CASE TEMPERATURE (°C) 9 7 6 Figure 5. Current Derating, Case, Per Diode SQUARE WAVE 5 4 3 2 1 0 155 dc 8 0 12 14 16 2 4 6 8 10 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 18 Figure 6. Forward Power Dissipation, Per Diode http://onsemi.com 3 MBR2045CTP PACKAGE DIMENSIONS TO–220 THREE–LEAD TO–220AB CASE 221A–09 ISSUE AA –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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