MURS230T3, MURS240T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com • • • • Small Compact Surface Mountable Package with J–Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.95 Volts Max @ 2.0 A, TJ = 150°C) ULTRAFAST RECTIFIERS 2 AMPERES 300–400 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Polarity: Polarity Band Indicates Cathode Lead Marking: U2F, U2G MARKING DIAGRAM U2x SMB CASE 403A x = F (230T3) G (240T3) MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MURS230T3 MURS240T3 VRRM VRWM VR Average Rectified Forward Current IF(AV) 1.0 @ TL = 150°C 2.0 @ TL = 125°C A Non–Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 35 A Operating Junction Temperature Range TJ –65 to +175 °C Semiconductor Components Industries, LLC, 2001 February, 2001 – Rev. 4 Value Unit ORDERING INFORMATION V 300 400 1 Device Package Shipping MURS230T3 SMB 2500/Tape & Reel MURS240T3 SMB 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MURS230T3/D MURS230T3, MURS240T3 THERMAL CHARACTERISTICS Rating Symbol Value Unit RθJL 13 °C/W Thermal Resistance, Junction to Lead (TL = 25°C) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 2.0 A, TJ = 25°C) (iF = 2.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/µs) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/µs, Rec. to 1.0 V) tfr Volts 1.30 1.05 µA 5.0 150 ns 65 50 50 ns 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. 10 10 7.0 7.0 5.0 5.0 175°C 3.0 100°C 2.0 I , INSTANTANEOUS FORWARD CURRENT (A) F I , INSTANTANEOUS FORWARD CURRENT (AMPS) F 3.0 TC = 25°C 1.0 0.7 0.5 0.3 0.2 0.1 TC = 25°C 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.05 0.03 0.03 0.02 0.02 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 0.01 1.9 100°C 1.0 0.07 0.01 175°C 2.0 0.3 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage Figure 1. Typical Forward Voltage http://onsemi.com 2 2.1 2.3 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 0.08 0.04 0.02 0.008 0.004 0.002 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 0.08 0.04 0.02 0.008 0.004 0.002 TJ = 175°C TJ = 100°C TJ = 25°C 0 100 50 150 TJ = 175°C IR, REVERSE CURRENT ( A) IR, REVERSE CURRENT ( A) MURS230T3, MURS240T3 200 300 250 350 TJ = 100°C TJ = 25°C 0 400 100 50 150 200 300 250 350 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current* 400 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. 35 30 30 NOTE: TYPICAL CAPACITANCE AT 0 V = 26 pF 20 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 25 15 10 5 0 4.0 8.0 12 16 20 24 28 32 36 15 10 0 40 12 16 20 24 28 32 36 Figure 6. Maximum Capacitance 8 7 6 dc 5 4 3 2 SQUARE WAVE 90 8 Figure 5. Typical Capacitance RATED VOLTAGE APPLIED RJL = 13°C/W TJ = 175°C 80 4 VR, REVERSE VOLTAGE (VOLTS) 9 1 0 VR, REVERSE VOLTAGE (VOLTS) 10 0 20 5 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 0 NOTE: MAXIMUM CAPACITANCE AT 0 V = 30 pF 25 100 110 120 130 140 150 160 170 180 5 TJ = 175°C 4 3 SQUARE WAVE 2 dc 1 0 0 0.5 1.0 1.5 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TC, CASE TEMPERATURE (°C) Figure 8. Power Dissipation Figure 7. Current Derating, Case http://onsemi.com 3 40 2.5 MURS230T3, MURS240T3 PACKAGE DIMENSIONS SMB DO–214AA CASE 403A–03 ISSUE D S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B C K P J INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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