MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. • • • • • • Small Compact Surface Mountable Package with J–Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.5 Volts Max @ 3.0 A, TJ = 25°C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 60 VOLTS SMC CASE 403 PLASTIC Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 217 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • MARKING DIAGRAM Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 16 mm Tape and Reel, 2500 units per reel Polarity: Notch in Plastic Body Indicates Cathode Lead Marking: B32, B33, B34, B36 YWW B3x B3x x Y W = Device Code = 2, 3, 4 or 6 = Year = Work Week MAXIMUM RATINGS Please See the Table on the Following Page ORDERING INFORMATION Device Package Shipping MBRS320T3 SMC 2500/Tape & Reel MBRS330T3 SMC 2500/Tape & Reel MBRS340T3 SMC 2500/Tape & Reel MBRS360T3 SMC 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 – Rev. 3 1 Publication Order Number: MBRS340T3/D MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 MAXIMUM RATINGS Symbol MBRS320T3 MBRS330T3 MBRS340T3 MBRS360T3 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 30 40 60 Volts Average Rectified Forward Current IF(AV) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 80 80 TJ – 65 to +125 – 65 to +125 RθJL 11 11 11 11 0.50 0.50 0.525 0.740 2.0 20 2.0 20 2.0 20 0.5 20 Operating Junction Temperature 3.0 @ TL = 100°C 4.0 @ TL = 90°C Amps 80 80 Amps °C – 65 to +125 THERMAL CHARACTERISTICS Thermal Resistance — Junction to Lead °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 3.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR Volts mA 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. http://onsemi.com 2 100 50 3 2 I R , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 TC = 100°C 1 0.7 0.5 0.3 0.2 TC = 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 1 0.5 75°C 0.2 0.1 0.05 0.02 0.01 1.1 1.2 1.3 1.4 100°C 25°C 0 4 8 12 16 20 24 28 32 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 0.07 0.05 TJ = 125°C 20 10 5 5 4 IAV 2 SQUARE WAVE 10 (CAPACITIVE LOAD) IPK 40 5 TJ = 100°C 3 36 DC = 20 1 0 0 1 2 3 4 5 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 10 500 RATED VOLTAGE APPLIED RθJC = 10.5°C/W TJ = 125°C 9 8 7 6 DC 5 4 3 SQUARE WAVE 2 TYPICAL CAPACITANCE AT 0 V = 480 pF 400 C, CAPACITANCE (pF) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Power Dissipation TJ = 25°C 300 200 100 1 0 40 50 60 70 80 90 100 110 120 130 0 140 0 TC, CASE TEMPERATURE (°C) 4 8 12 16 20 24 28 32 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Current Derating (Case) Figure 5. Typical Capacitance http://onsemi.com 3 36 40 MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 PACKAGE DIMENSIONS SMC PLASTIC PACKAGE CASE 403–03 ISSUE B S A D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. B C K P J INCHES DIM MIN MAX A 0.260 0.280 B 0.220 0.240 C 0.075 0.095 D 0.115 0.121 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.305 0.320 MILLIMETERS MIN MAX 6.60 7.11 5.59 6.10 1.90 2.41 2.92 3.07 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 7.75 8.13 H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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