PD - 95647 IRG4PC50KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free C VCES = 600V VCE(on) typ. = 1.84V G @VGE = 15V, IC = 30A E n-channel Benefits As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density motor controls possible This part replaces the IRGPC50K and IRGPC50M devices TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 52 30 104 104 10 ±20 170 200 78 -55 to +150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. 0.24 6 (0.21) 0.64 40 Units °C/W g (oz) www.irf.com 1 7/26/04 IRG4PC50KPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 18 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.47 1.84 Collector-to-Emitter Saturation Voltage 2.19 VCE(ON) 1.79 VGE(th) Gate Threshold Voltage 3.0 ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -12 gfe Forward Transconductance 17 24 ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS Max. Units Conditions V VGE = 0V, IC = 250µA V VGE = 0V, IC = 1.0A V/°C VGE = 0V, IC = 1.0mA 2.2 IC = 30A VGE = 15V IC = 52A See Fig.2, 5 V IC = 30A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100 V, IC = 30A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 5000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 n A VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 10 Typ. 200 25 85 38 34 160 79 0.49 0.68 1.12 37 35 260 170 2.34 13 3200 370 95 Max. Units Conditions 300 IC = 30A 38 nC VCC = 400V See Fig.8 130 VGE = 15V TJ = 25°C ns 240 IC = 30A, VCC = 480V 120 VGE = 15V, RG = 5.0Ω Energy losses include "tail" mJ See Fig. 9,10,14 1.4 µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V TJ = 150°C, IC = 30A, VCC = 480V ns VGE = 15V, RG = 5.0Ω Energy losses include "tail" mJ See Fig. 11,14 nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by Repetitive rating; pulse width limited by maximum VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0 Ω Pulse width ≤ 80µs; duty factor ≤ 0.1%. max. junction temperature. ( See fig. 13b ) junction temperature. Pulse width 5.0µs, single shot. 2 www.irf.com IRG4PC50KPbF 70 For both: Triangular wave: Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 40W 60 50 40 Clamp voltage: 80% of rated Square wave: 60% of rated voltage 30 I 20 Ideal diodes 10 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 TJ = 25 °C 100 TJ = 150 °C 10 1 V GE = 15V 20µs PULSE WIDTH 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 100 TJ = 150 °C 10 TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 11 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50KPbF 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 60 50 40 30 20 10 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 60 A 2.0 IC = 30 A IC = 15 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50KPbF VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 4000 Cies 3000 2000 1000 Coes Cres 0 1 20 VGE , Gate-to-Emitter Voltage (V) 5000 16 12 8 4 0 10 0 100 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 100 3.0 2.0 1.0 0.0 10 20 30 40 Ω RG , Gate Resistance (Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 80 120 160 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C I C = 30A 0 40 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) 4.0 VCC = 400V I C = 30A 50 RG = 5.0 Ohm Ω VGE = 15V VCC = 480V 10 IC = 60 A IC = 30 A IC = 15 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC50KPbF RG TJ VCC VGE 1000 5.0Ω = 5.0Ohm = 150 °C = 480V = 15V I C, Collector-to-Emitter Current (A) Total Switching Losses (mJ) 8.0 6.0 4.0 2.0 VGE = 20V T J = 125 oC 100 SAFE OPERATING AREA 10 0.0 10 20 30 40 50 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 60 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4PC50KPbF L D.U.T. RL = VC * 50V 0 - 480V 1000V 480V 4 X IC@ 25°C 480µF 960V c d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13b - Pulsed Collector Fig. 13a - Clamped Inductive Current Test Circuit Load Test Circuit IC L Driver* D.U.T. Fig. 14a - Switching Loss Test Circuit VC 50V 1000V c d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4PC50KPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INT ERNATIONAL RECT IFIER LOGO IRFPE30 56 AS S EMBLY LOT CODE 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 8 www.irf.com