CY7C1021CV26 1-Mbit (64 K × 16) Static RAM 1-Mbit (64 K × 16) Static RAM Features an automatic power-down feature that significantly reduces power consumption when deselected. ■ Temperature Range ❐ Automotive: –40 °C to 125 °C ■ High speed ❐ tAA = 15 ns ■ Optimized voltage range: 2.5 V to 2.7 V ■ Low active power: 220 mW (Max) ■ Automatic power-down when deselected ■ Independent control of upper and lower bits ■ CMOS for optimum speed/power ■ Available in Pb-free and non Pb-free 44-pin TSOP II , 44-pin (400-Mil) Molded SOJ and Pb-free 48-ball FPBGA packages Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A15). Functional Description The CY7C1021CV26 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O9 to I/O16. See the truth table at the end of this data sheet for a complete description of Read and Write modes. The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a Write operation (CE LOW, and WE LOW). Logic Block Diagram 64K x 16 RAM Array SENSE AMPS A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER DATA IN DRIVERS I/O1–I/O8 I/O9–I/O16 COLUMN DECODER A8 A9 A10 A11 A12 A13 A14 A15 BHE WE CE OE BLE Cypress Semiconductor Corporation Document Number: 38-05589 Rev. *E • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised December 1, 2010 [+] Feedback CY7C1021CV26 Contents Selection Guide ................................................................ 3 Pin Configuration ............................................................. 3 Pin Definitions .................................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 Electrical Characteristics ................................................. 4 Capacitance ...................................................................... 4 Thermal Resistance .......................................................... 4 AC Test Loads and Waveforms ....................................... 5 Switching Characteristics ................................................ 5 Switching Waveforms ...................................................... 7 Read Cycle No. 1 ........................................................ 7 Read Cycle No. 2 (OE Controlled) .............................. 7 Write Cycle No. 1 (CE Controlled) ............................... 8 Document Number: 38-05589 Rev. *E Write Cycle No. 2 (BLE or BHE Controlled) ................ 8 Write Cycle No. 3 (WE Controlled, LOW) .................... 9 Truth Table ........................................................................ 9 Ordering Information ...................................................... 10 Ordering Code Definitions ......................................... 10 Package Diagrams .......................................................... 11 Acronyms ........................................................................ 13 Document Conventions ................................................. 13 Units of Measure ....................................................... 13 Document History Page ................................................. 14 Sales, Solutions, and Legal Information ...................... 15 Worldwide Sales and Design Support ....................... 15 Products .................................................................... 15 PSoC Solutions ......................................................... 15 Page 2 of 15 [+] Feedback CY7C1021CV26 Selection Guide[1] –15 Unit Maximum Access Time 15 ns Maximum Operating Current 80 mA Maximum CMOS Standby Current 10 mA Pin Configuration[2] TSOP II -Top View A4 A3 A2 A1 A0 CE I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A15 A14 A13 A12 NC 1 44 2 3 43 42 4 41 40 39 38 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BHE BLE I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 NC Pin Definitions Pin Name A0–A15 Pin Number 1–5, 18–21, 24–27, 42–44 I/O Type Description Input Address Inputs used to select one of the address locations. I/O1–I/O16 7–10, 13–16, 29–32, 35–38 Input/Output Bidirectional Data I/O lines. Used as input or output lines depending on operation. NC 22, 23, 28 No Connect No Connects. This pin is not connected to the die. WE 17 Input/Control Write Enable Input, active LOW. When selected LOW, a Write is conducted. When selected HIGH, a Read is conducted. CE 6 Input/Control Chip Enable Input, active LOW. When LOW, selects the chip. When HIGH, deselects the chip. Input/Control Byte Write Select Inputs, active LOW. BHE controls I/O16–I/O9, BLE controls I/O8–I/O1. BHE, BLE 40, 39 OE 41 Input/Control Output Enable, active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. VSS 12, 34 Ground Ground for the device. Should be connected to ground of the system. VCC 11, 33 Power Supply Power Supply inputs to the device. Notes 1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25 °C. 2. NC pins are not connected on the die. Document Number: 38-05589 Rev. *E Page 3 of 15 [+] Feedback CY7C1021CV26 DC input voltage[3] ............................... –0.5 V to VCC + 0.5 V Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage temperature ................................ –65 C to +150 C Ambient temperature with power applied ........................................... –55 C to +125 C Supply voltage on VCC to relative GND[3] .....–0.5 V to +4.6 V DC voltage applied to outputs in high Z state[3] ................................... –0.5 V to VCC + 0.5 V Current into outputs (LOW) ......................................... 20 mA Static discharge voltage........................................... > 2001 V (per MIL-STD-883, method 3015) Latch-up current ..................................................... > 200 mA Operating Range Ambient Temperature VCC –40 C to +125 C 2.5 V–2.7 V Range Automotive Electrical Characteristics Over the Operating Range Parameter Description Test Conditions VOH Output HIGH voltage VCC = Min, IOH = –1.0 mA VCC = Min, IOL = 1.0 mA –15 Min Max 2.3 – Unit V VOL Output LOW voltage – 0.4 V VIH Input HIGH voltage 2.0 VCC + 0.3 V VIL Input LOW voltage[3] –0.3 0.8 V IIX Input leakage current GND < VI < VCC –3 +3 A IOZ Output leakage current GND < VI < VCC, output disabled –3 +3 A ICC VCC operating supply current VCC = Max, IOUT = 0 mA, f = fMAX = 1/tRC – 80 mA ISB1 Automatic CE Power-Down Current —TTL inputs Max VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX – 15 mA ISB2 Automatic CE Power-Down Current —CMOS inputs Max VCC, CE > VCC – 0.3 V, VIN > VCC – 0.3 V, or VIN < 0.3 V, f = 0 – 10 mA Capacitance[4] Parameter Description CIN Input capacitance COUT Output capacitance Test Conditions TA = 25 C, f = 1 MHz, VCC = 2.6 V Max Unit 8 pF 8 pF TSOP-II Unit 76.92 C/W 15.86 C/W Thermal Resistance[4] Parameter JA JC Description Test Conditions Thermal Resistance (Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit board Thermal Resistance (Junction to Case) Notes 3. VIL (min.) = –2.0V and VIH(max) = VCC + 0.5 V for pulse durations of less than 20 ns. 4. Tested initially and after any design or process changes that may affect these parameters. Document Number: 38-05589 Rev. *E Page 4 of 15 [+] Feedback CY7C1021CV26 AC Test Loads and Waveforms[5] 2.6 V R1 1830 90% OUTPUT 30 pF INCLUDING JIG AND SCOPE R2 High Z characteristics: ALL INPUT PULSES 2.6V 10% GND 2.6V 90% OUTPUT 10% R2 351 5 pF 1976 (a) R 317 Rise Time: 1 V/ns (b) Fall Time: 1 V/ns (c) Switching Characteristics Over the Operating Range[6] Parameter Description –15 Min Max Unit Read Cycle tRC Read cycle time 15 – ns tAA Address to data valid – 15 ns tOHA Data hold from address change 3 – ns tACE CE LOW to data valid – 15 ns tDOE OE LOW to data valid – 7 ns tLZOE OE LOW to low Z[7] 0 – ns – 7 ns tHZOE OE HIGH to high Z[7, 8] Z[7] tLZCE CE LOW to low 3 – ns tHZCE CE HIGH to high Z[7, 8] – 7 ns tPU[9] tPD[9] CE LOW to power-up 0 – ns CE HIGH to power-down – 15 ns tDBE Byte enable to data valid – 7 ns tLZBE Byte enable to low Z 0 – ns tHZBE Byte disable to high Z – 7 ns Notes 5. AC characteristics (except high Z) are tested using the Thevenin load shown in Figure (a). High Z characteristics are tested for all speeds using the test load shown in Figure (c) 6. Test conditions assume signal transition time of 2.6 ns or less, timing reference levels of 1.3 V, input pulse levels of 0 to 2.6 V. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 8. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 9. This parameter is guaranteed by design and is not tested. Document Number: 38-05589 Rev. *E Page 5 of 15 [+] Feedback CY7C1021CV26 Switching Characteristics Over the Operating Range[6] (continued) Parameter Description –15 Min Max Unit Write Cycle[10] tWC Write cycle time 15 – ns tSCE CE LOW to write end 10 – ns tAW Address set-up to write end 10 – ns tHA Address hold from write end 0 – ns tSA Address set-up to write start 0 – ns tPWE WE pulse width 10 – ns tSD Data set-up to write end 8 – ns tHD Data hold from write end 0 – ns Z[11] tLZWE WE HIGH to low 3 – ns tHZWE WE LOW to high Z[11, 12] – 7 ns tBW Byte enable to end of write 9 – ns Notes 10. The internal Write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a Write, and the transition of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write. 11. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 12. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. Document Number: 38-05589 Rev. *E Page 6 of 15 [+] Feedback CY7C1021CV26 Switching Waveforms Read Cycle No. 1[13, 14] tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[14, 15] ADDRESS tRC CE tACE OE tHZOE tDOE BHE, BLE tLZOE tHZCE tDBE tLZBE DATA OUT HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tHZBE DATA VALID HIGH IMPEDANCE tPD tPU 50% 50% IICC CC IISB SB Notes 13. Device is continuously selected. OE, CE, BHE and/or BLE = VIL. 14. WE is HIGH for Read cycle. 15. Address valid prior to or coincident with CE transition LOW. Document Number: 38-05589 Rev. *E Page 7 of 15 [+] Feedback CY7C1021CV26 Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[16, 17] tWC ADDRESS CE tSA tSCE tAW tHA tPWE WE tBW BHE, BLE tSD tHD DATA I/O Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tHA tPWE WE tSCE CE tSD tHD DATA I/O Notes 16. Data I/O is high-impedance if OE or BHE and/or BLE= VIH. 17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document Number: 38-05589 Rev. *E Page 8 of 15 [+] Feedback CY7C1021CV26 Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, LOW) OE tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE tBW BHE, BLE tHZWE tSD tHD DATA I/O tLZWE Truth Table CE OE WE H X X X X High Z High Z Power-down Standby (ISB) L L H L L Data Out Data Out Read – All bits Active (ICC) L H Data Out High Z Read – Lower bits only Active (ICC) H L High Z Data Out Read – Upper bits only Active (ICC) L L Data In Data In Write – All bits Active (ICC) L H Data In High Z Write – Lower bits only Active (ICC) H L High Z Data In Write – Upper bits only Active (ICC) L X L BLE BHE I/O1–I/O8 I/O9–I/O16 Mode Power L H H X X High Z High Z Selected, Outputs Disabled Active (ICC) L X X H H High Z High Z Selected, Outputs Disabled Active (ICC) Document Number: 38-05589 Rev. *E Page 9 of 15 [+] Feedback CY7C1021CV26 Ordering Information Cypress offers other versions of this type of product in many different configurations and features. The following table contains only the list of parts that are currently available. For a complete listing of all options, visit the Cypress website at http://www.cypress.com and refer to the product summary page at http://www.cypress.com/products or contact your local sales representative. Cypress maintains a worldwide network of offices, solution centers, manufacturer's representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices. Speed (ns) 15 Ordering Code CY7C1021CV26-15ZSXE Package Name Package Type 51-85087 44-pin TSOP Type II (Pb-free) CY7C1021CV26-15VXE 51-85082 44-pin (400-Mil) Molded SOJ (Pb-free) CY7C1021CV26-15BAE 51-85150 48-ball FPBGA (6 × 8 × 1 mm) (Pb-free) CY7C1021CV26-15BAET 51-85150 48-ball FPBGA (6 × 8 × 1 mm) (Pb-free) CY7C1021CV26-15VXET 51-85082 44-pin (400-Mil) Molded SOJ (Pb-free) CY7C1021CV26-15ZSXET 51-85087 44-pin TSOP Type II (Pb-free) Operating Range Automotive Ordering Code Definitions CY7C 1021 C V26 - 15 XXX E X X = T or Blank T = Tape and Reel; Blank = Tube Temperature Range: E = Automotive Package Type: XXX = ZSX or VX or BA ZSX = 44-pin TSOP Type II (Pb-free) VX = 44-pin (400-Mil) Molded SOJ (Pb-free) BA = 48-ball FPBGA (Pb-free) Speed Grade (15 ns) V26 = 2.6 V Process Technology 0.16 µm 1021 = Part Identifier CY7C = Cypress SRAMs Document Number: 38-05589 Rev. *E Page 10 of 15 [+] Feedback CY7C1021CV26 Package Diagrams Figure 1. 44-pin TSOP II, 51-85087 51-85087 *C 51-85087-*A Figure 2. 44-pin (400-Mil) Molded SOJ, 51-85082 51-85082 *C Document Number: 38-05589 Rev. *E Page 11 of 15 [+] Feedback CY7C1021CV26 Package Diagrams (continued) Figure 3. 48-ball FBGA (6 × 8 × 1 mm), 51-85150 51-85150 *F Document Number: 38-05589 Rev. *E Page 12 of 15 [+] Feedback CY7C1021CV26 Acronyms Document Conventions Acronym Description CMOS complementary metal oxide semiconductor CE chip enable I/O input/output OE output enable SOJ small outline J-lead SRAM static random access memory TSOP thin small-outline package TTL Units of Measure Symbol Unit of Measure ns nano seconds V Volts µA micro Amperes mA milli Amperes mW milli Watts transistor-transistor logic MHz Mega Hertz FPBGA fine-pitch ball grid array pF pico Farad WE write enable °C degree Celcius W Watts % percent Document Number: 38-05589 Rev. *E Page 13 of 15 [+] Feedback CY7C1021CV26 Document History Page Document Title: CY7C1021CV26 1-Mbit (64 K × 16) Static RAM Document Number: 38-05589 REV. ECN NO. Issue Date Orig. of Change ** 238454 See ECN RKF New data sheet for Automotive *A 335861 See ECN SYT Added Lead-Free Product Information Included the 44-Lead (400-Mil) Molded SOJ V34 Package *B 493543 See ECN NXR Changed the description of IIX from Input Load Current to Input Leakage Current in DC Electrical Characteristics table Removed IOS parameter from DC Electrical Characteristics table Updated Ordering Information Table *C 2897087 03/22/10 AJU Removed obsolete parts from ordering information table Updated package diagrams *D 3057593 10/13/2010 PRAS Updated Ordering Information and added Ordering Code Definitions. Updated Package Diagrams. *E 3098812 12/01/2010 PRAS Added Acronyms and Units of Measure. Minor edits and updated in new template. Document Number: 38-05589 Rev. *E Description of Change Page 14 of 15 [+] Feedback CY7C1021CV26 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing cypress.com/go/memory cypress.com/go/image PSoC cypress.com/go/psoc Touch Sensing cypress.com/go/touch USB Controllers Wireless/RF cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2004-2010. The information contained herein is subject to change without notice. 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Document Number: 38-05589 Rev. *E Revised December 1, 2010 Page 15 of 15 All products and company names mentioned in this document may be the trademarks of their respective holders. [+] Feedback